Vishay Si2301CDS Schematic

P-Channel 20 V (D-S) MOSFET

G

TO-236

(SOT-23)

S

D

Top View

2

3

1

Si2301CDS (N1)*

* Marking Code

Ordering Information: Si2301CDS-T1-E3 (Lead (Pb)-free) Si2301CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

Si2301CDS

Vishay Siliconix

MOSFET PRODUCT SUMMARY

VDS (V) R

0.112 at V

- 20

0.142 at V

DS(on)

GS

()

= - 4.5 V

= - 2.5 V

I

D

- 3.1

- 2.7

(A)

a

Qg (Typ.)

3.3 nC

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• TrenchFET® Power MOSFET

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Load Switch

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

T

= 25 °C

C

T

= 70 °C

C

= 25 °C - 2.3

T

A

V

TA = 70 °C - 1.8

Pulsed Drain Current

Continuous Source-Drain Diode Current

Maximum Power Dissipation

T

= 25 °C

C

T

= 25 °C - 0.72

A

T

= 25 °C

C

T

= 70 °C

C

T

= 25 °C 0.86

A

I

P

TA = 70 °C 0.55

Operating Junction and Storage Temperature Range TJ, T

DS

GS

I

D

DM

I

S

D

stg

- 20

± 8

- 3.1

- 2.5

b, c

- 10

- 1.3

b, c

1.6

1.0

b, c

- 55 to 150

V

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain)

Notes: a. Based on T b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 175 °C/W.

Document Number: 68741 S10-2430-Rev. C, 25-Oct-10

= 25 °C.

C

b, d

Steady State

5 s

R

thJA

R

thJF

120 145

62 78

°C/W

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Si2301CDS

Vishay Siliconix

MOSFET SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/T

DS

Temperature Coefficient

V

GS(th)

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Gate Resistance R

Tur n - O n D e l ay Time t

Rise Time t

Turn-Off Delay Time t

Fall Ti me t

DS

J



V

GS(th)/TJ

GS(th)

GSS

DSS

I

V

D(on)

R

DS(on)

g

fs

iss

75

oss

55

rss

g

gs

1.3

gd

f = 1 MHz 6.0 

g

d(on)

r

30 50

d(off)

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulse Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Reverse Recovery Fall Time t

Reverse Recovery Rise Time t

S

I

SM

SD

rr

a

b

Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing.

V

= 0 V, ID = - 250 µA - 20 V

GS

ID = - 250 µA

V

= VGS, ID = - 250 µA - 0.4 - 1 V

DS

- 18

2.2

VDS = 0 V, VGS = ± 8 V ± 100 nA

V

DS

= - 20 V, V

DS

= - 20 V, V

DS

V

GS

- 5 V, V

= - 4.5 V, ID = - 2.8 A 0.090 0.112

GS

= - 2.5 V, ID = - 2.0 A 0.110 0.142

GS

= 0 V - 1

GS

= 0 V, TJ = 55 °C - 10

= - 4.5 V - 6 A

GS

VDS = - 5 V, ID = - 2.8 A 9.5 S

405

V

DS

= - 10 V, V

V

DS

= - 10 V, V

= 0 V, f = 1 MHz

GS

= - 4.5 V, ID = - 3 A 5.5 10

GS

3.3 6

= - 10 V, V

V

DS

= - 2.5 V, ID = - 3 A

GS

0.7

11 20

V

I

= - 1 A, V

D

= - 10 V, RL = 10 

DD

= - 4.5 V, Rg = 1 

GEN

35 60

10 20

TC = 25 °C - 1.3

IS = - 0.7 A - 0.8 - 1.2 V

30 50 ns

IF = - 3.0 A, dI/dt = 100 A/µs, TJ = 25 °C

25 50 nC

15

- 10

mV/°C

µA



pFOutput Capacitance C

nC

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the de vice. These are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 68741

S10-2430-Rev. C, 25-Oct-10

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

VGS=1.5V

0

2

4

6

8

10

0.0 0.5 1.0 1.5 2.0

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

VGS=5V thru 2.5 V

V

GS

=1V

V

GS

=2V

0.00

0.05

0.10

0.15

0.20

02468 10

- On-Resistance (Ω)R

DS(on)

ID- Drain Current (A)

VGS=4.5V

VGS=2.5V

0

2

4

6

8

02468 10

- Gate-to-Source Voltage (V)

Qg- Total Gate Charge (nC)

V

GS

ID=3A

VDS=10V

VDS=5V

VDS=15V

0.00

0.25

0.50

0.75

1.00

0.0 0.3 0.6 0.9 1.2 1.5

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (A)I

D

TC= 25 °C

TC= 125 °C

TC= - 55 °C

Si2301CDS

Vishay Siliconix

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Transfer Characteristics

800

600

C

iss

400

C - Capacitance (pF)

200

C

0

0 5 10 15 20

C

oss

rss

VDS- Drain-to-Source Voltage (V)

Capacitance

1.5

ID=2.8 A

1.3

Document Number: 68741 S10-2430-Rev. C, 25-Oct-10

Gate Charge

1.1

- On-Resistance (Normalized)

VGS=4.5V

DS(on)

R

0.9

VGS=1.8V

0.7

- 50 - 25 0 25 50 75 100 125 150

T

-Junction Temperature (°C)

J

On-Resistance vs. Junction Temperature

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Vishay Si2301CDS Schematic [ru]