Vishay Si2301BDS Schematic

P-Channel 2.5-V (G-S) MOSFET

Si2301BDS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

- 20

DS(on)

0.100 at V

0.150 at V

GS

(Ω)

= - 4.5 V

= - 2.5 V

I

D

(A)

- 2.4

- 2.0

b

FEATURES

• Halogen-free Option Available

RoHS*

COMPLIANT

TO-236

(SOT-23)

G

1

D

3

S

2

Top View

Si2301 BDS (L1)*

* Marking Code

Ordering Information: Si2301BDS-T1

Si2301BDS-T1-E3 (Lead (Pb)-free) Si2301BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

= 150 °C)

J

a

Continuous Source Current (Diode Conduction)

Power Dissipation

b

Operating Junction and Storage Temperature Range

TA = 25 °C

T

= 70 °C

A

TA = 25 °C

= 70 °C

T

A

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

, T

J

stg

- 2.4 - 2.2

- 1.9 - 1.8

- 0.72 - 0.6

0.57 0.45

- 20

± 8

- 10

0.9 0.7

- 55 to 150 °C

V

A

W

Pb-free

Available

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b

c

R

thJA

Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 board, t ≤ 5 s. c. Surface Mounted on FR4 board.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 72066 S-80427-Rev. D, 03-Mar-08

120 145

140 175

°C/W

www.vishay.com

1

Si2301BDS

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions

Static

V

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

Forward Transconductance

a

Diode Forward Voltage

Dynamic

b

Total Gate Charge

Gate-Drain Charge

Input Capacitance

Reverse Transfer Capacitance

Switching

c

Tur n -O n Ti m e

Turn-Off Time

a

V

GS(th)

I

GSS

I

DSS

I

D(on)

R

DS(on)

g

V

Q

C

t

d(on)

t

d(off)

DS

fs

SD

gs

gd

iss

oss

rss

t

r

t

f

V

g

VDS = - 6 V, V

Notes: a. Pulse test: pulse width ≤ 300 µs duty cycle ≤ 2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature.

= 0 V, ID = - 250 µA

GS

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 8 V

V

= - 20 V, V

DS

= - 20 V, V

DS

≤ - 5 V, V

V

DS

V

≤ - 5 V, V

DS

V

= - 4.5 V, ID = - 2.8 A

GS

V

= - 2.5 V, ID = - 2.0 A

GS

= 0 V, TJ = 55 °C

GS

VDS = - 5 V, ID = - 2.8 A

IS = - 0.75 A, V

V

= - 6 V, V

DS

V

DD

≅ - 1.0 A, V

I

D

GS

≅ - 2.8 A

I

D

= 0 V, f = 1 MHz

GS

= - 6 V, RL = 6 Ω

GEN

= 6 Ω

R

g

= 0 V

GS

= - 4.5 V

= - 2.5 V

= 0 V

GS

= - 4.5 V

- 20

- 0.45 - 0.95

± 100 nA

- 6

- 3

Limits

- 1

- 10

0.080 0.100

0.110 0.150

6.5 S

- 0.80 - 1.2 V

4.5 10

0.7

1.1

375

95

65

20 30

40 60

30 45

20 30

Unit Min. Typ. Max.

V

µA

A

Ω

nCGate-Source Charge

pFOutput Capacitance

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the de vice. These are stress rating s only, and functiona l operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

www.vishay.com 2

Document Number: 72066

S-80427-Rev. D, 03-Mar-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2301BDS

Vishay Siliconix

10

8

6

4

- Drain Current (A)I

D

2

0

012345

VGS = 5 thru 2.5 V

2 V

1.5 V

1 V

VDS - Drain-to-Source Voltage (V)

Output Characteristics

0.5

0.4

0.3

0.2

- On-Resistance (Ω)R

DS(on)

0.1

VGS = 2.5 V

10

8

6

4

- Drain Current (A)I

D

2

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VGS - Gate-to-Source Voltage (V)

TC = - 55 °C

25 °C

Transfer Characteristics

800

600

C

400

C - Capacitance (pF)

200

C

iss

oss

125 °C

0.0 0246810

On-Resistance vs. Drain Current

5

VDS = 10 V

= 2.8 A

I

D

4

3

2

- Gate-to-Source Voltage (V)

GS

1

V

0

012345

Document Number: 72066 S-80427-Rev. D, 03-Mar-08

VGS = 4.5 V

ID - Drain Current (A)

Qg - Total Gate Charge (nC)

Gate Charge

C

rss

0

048121620

VDS - Drain-to-Source Voltage (V)

Capacitance

1.6 VGS = 4.5 V

= 2.8 A

I

D

1.4

1.2

- On-Resistance

1.0

(Normalized)

DS(on)

R

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

- Junction Temperature (°C)

T

J

On-Resistance vs. Junction Temperature

www.vishay.com

3

Vishay Si2301BDS Schematic [ru]