Vishay Si2300DS Schematic

New Product

N-Channel 30-V (D-S) MOSFET

Si2300DS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

0.068 at V

30

0.085 at V

DS(on)

(Ω)

GS

= 4.5 V

= 2.5 V

I

D

3.6

3.4

(A)

(Typ.)

Q

g

a

3 nC

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• TrenchFET

• 100 % R

• Compliant to RoHS Directive 2002/95/EC

®

Power MOSFET

Tested

g

APPLICATIONS

• DC/DC Converter for Portable Devices

TO-236

(SOT-23)

G

1

3

D

2

S

Top View

Si2300DS (P2)*

* Marking Code

Ordering Information: Si2300DS-T1-GE3 (Lead (Pb)-free and Halogen-free)

• Load Switch

D

G

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

T

Continuous Drain Current (T

= 150 °C)

J

T

TA = 70 °C

Pulsed Drain Current

T

Continuous Source-Drain Diode Current

T

Maximum Power Dissipation

T

TA = 70 °C

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

d, e

= 25 °C

C

= 70 °C

C

= 25 °C

A

= 25 °C

C

= 25 °C

A

= 25 °C

C

= 70 °C

C

= 25 °C

A

V

DS

V

GS

I

D

I

DM

I

S

P

D

, T

T

J

stg

30

± 12

a

3.6

3.0

b, c

3.1

b, c

2.5

15

1.4

b, c

0.9

1.7

1.1

b, c

1.1

b, c

0.7

- 55 to 150

260

V

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State Notes: a. Package limited b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 130 °C/W.

Document Number: 65701 S10-0111-Rev. A, 18-Jan-10

b, d

t ≤ 5 s R

thJA

R

thJF

90 115 60 75

°C/W

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New Product

Si2300DS

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

V

DS

V

DS

V

DS

I

D

I

D

IF = 2.5 A, dI/dt = 100 A/µs, TJ = 25 °C

= 0 V, ID = 250 µA

GS

VDS = V

V

= 0 V, V

DS

V

= 30 V, V

DS

= 30 V, V

DS

V

= 4.5 V, ID = 2.9 A

GS

V

= 2.5 V, ID = 2.6 A

GS

V

DS

= 15 V, V

DS

= 15 V, V

V

DD

≅ 2.5 A, V

V

DD

≅ 2.5 A, V

IS = 2.5 A, V

30 V

ID = 250 µA

, ID = 250 µA

GS

= 0 V, TJ = 55 °C

GS

≥ 5 V, V

GS

= ± 12 V

= 0 V

GS

= 10 V

0.6 1.5 V

10 A

21

- 3.2

± 100 nA

1

10

0.055 0.068

0.070 0.085

= 15 V, ID = 2.9 A

13 S

320

= 0 V, f = 1 MHz

GS

45

19

= 10 V, ID = 3.1 A

GS

6.5 10

34.5

= 4.5 V, ID = 3.1 A

GS

0.8

0.5

f = 1 MHz 0.6 3.2 6.4 Ω

10 15

= 15 V, RL = 6 Ω

= 4.5 V, Rg = 1 Ω

GEN

15 25

20 30

11 20

510

= 15 V, RL = 6 Ω

= 10 V, Rg = 1 Ω

GEN

12 20

15 25

10 15

TC = 25 °C

1.4

15

GS

= 0 V

0.8 1.2 V

11 20 ns

510nC

7

4

mV/°C

µA

Ω

pFOutput Capacitance

nC

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 65701

S10-0111-Rev. A, 18-Jan-10

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2300DS

Vishay Siliconix

15

VGS= 5 V thru 3 V

12

9

6

- Drain Current (A)

D

I

3

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

V

- Drain-to-Source Voltage (V)

DS

Output Characteristics

0.20

0.16

0.12

VGS= 2.5 V

- On-Resistance (Ω)

DS(on)

R

0.08

0.04

VGS= 2.5 V

VGS= 2 V

VGS= 4.5 V

5

4

TC= 125 °C

3

2

- DrainCurrent (A)I

D

1

0

0.0 0.5 1.0 1.5 2.0 2.5

TC= 25 °C

TC= - 55 °C

V

- Gate-to-Source Voltage (V)

GS

Transfer Characteristics

450

C

360

270

180

C - Capacitance (pF)

iss

C

oss

90

0.00 0 3 6 9 12 15

On-Resistance vs. Drain Current and Gate Voltage

10

ID= 3.1 A

8

6

VDS= 15 V

4

- Gate-to-Source Voltage (V) 2

GS

V

0

02468

Document Number: 65701 S10-0111-Rev. A, 18-Jan-10

ID- DrainCurrent(A)

VDS= 7.5 V

VDS= 24 V

Q

- Total Gate Charge (nC)

g

Gate Charge

C

0

0 5 10 15 20 25 30

1.7

1.6

1.5

1.4

1.3

1.2

- On-Resistance

(Normalized)

1.1

1.0

DS(on)

R

0.9

0.8

0.7

- 50 - 25 0 25 50 75 100 125 150

rss

VDS- Drain-to-SourceVoltage (V)

Capacitance

ID=2.9A

T

- Junction Temperature (°C)

J

VGS= 4.5 V

VGS= 2.5 V

On-Resistance vs. Junction Temperature

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Vishay Si2300DS Schematic [ru]