Vishay SI1988DH Schematic

Si1988DH

Dual N-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V) r

0.168 at V

20

0.200 at V

0.250 at V

SOT-363

SC-70 (6-LEADS)

S

1

G

2

1

D

3

2

Top View

Ordering Information: Si1988DH-T1-E3 (Lead (Pb)-free)

DS(on)

(Ω)

GS

6

5

4

= 4.5 V

= 2.5 V

= 1.8 V

D

1

G

2

S

2

I

(A)

D

1.3

New Product

a

Qg (Typ)

a

1.6 nC

a

Marking Code

CF XX

Part # Code

Y Y

Lot Traceability and Date Code

Vishay Siliconix

FEATURES

• TrenchFET® Power MOSFET

APPLICATIONS

• Load Switch for Portable Applications

D

1

G

1

S

1

annel MOSFET

N-Ch

G

2

N-Channel MOSFET

RoHS

COMPLIANT

D

2

S

2

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

Pulsed Drain Current

Continuous Source-Drain Diode Current

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

d, e

T

= 25 °C

C

T

= 70 °C

C

TA = 25 °C TA = 70 °C

= 25 °C

T

C

= 25 °C

T

A

T

= 25 °C

C

T

= 70 °C

C

= 25 °C

T

A

TA = 70 °C

V

DS

V

GS

I

D

I

DM

I

S

1.3

0.61

20

± 8

1.3

a, b, c

1.0

V

a

A

4

b, c

1.25

P

D

T

, T

J

stg

0.8

b, c

0.74

b, c

0.47

- 55 to 150

260

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain)

Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 5 sec. d. Maximum under Steady State conditions is 220 °C/W.

b, f

t ≤ 5 sec

Steady State

R

thJA

R

thJF

130 170

80 100

°C/W

Document Number: 74296 S-62109-Rev. A, 23-Oct-06

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Si1988DH

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n - O n D e l a y T im e

Rise Time

Turn-Off Delay Time

Fall Time

Turn-on Delay Time

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

r

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

Rise Time tr 11 20

Turn-Off Delay Time

t

d(off)

Fall Time tr 6 10

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

VGS = 0 V, ID = 250 µA

ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 8 V

V

DS

= 20 V, V

DS

= 20 V, V

GS

≤ 5 V, V

DS

V

= 4.5 V, ID = 1.4 A

GS

V

= 2.5 V, ID = 1.3 A

GS

V

= 1.8 V, ID = 0.4 A

GS

= 0 V

GS

= 0 V, TJ = 55 °C

= 4.5 V

GS

VDS = 4 V, ID = 1.4 A

VDS = 10 V, V

V

= 10 V, V

DS

= 0 V, f = 1 MHz

GS

= 8 V, ID = 1.6 A

GS

= 4.5 V, ID = 1.6 A

GS

f = 1 MHz 4 Ω

V

= 10 V, RL = 7.7 Ω

DD

≅ 1.3 A, V

I

D

= 4.5 V, Rg = 1 Ω

GEN

VDD = 10 V, RL = 7.7 Ω

I

≅ 1.3 A, V

D

= 8 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = 1.3 A, V

GS

= 0 V

IF = 1.3 A, di/dt = 100 A/µs, TJ = 25 °C

20 V

19.7

- 2.4

mV/°C

0.4 1 V

± 100 ns

1

10

µA

4A

0.139 0.168

0.165 0.200

Ω

0.205 0.250

4S

110

25

pFOutput Capacitance

11

2.7 4.1

1.6 2.4

0.3

nC

0.25

812

20 30

15 25

10 15

ns

510

10 15

1

4

A

0.8 1.2 V

20 40 ns

20 40 nC

16

4

ns

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Document Number: 74296

S-62109-Rev. A, 23-Oct-06

TYPICAL CHARACTERISTICS 25 °C, unless noted

Si1988DH

Vishay Siliconix

4

)A( tnerruC niarD –I

3

2

D

1

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VGS = 5 thru 2 V

VGS = 1 V

– Drain-to-Source Voltage (V)

V

DS

VGS = 1.5 V

Output Characteristics

0.400

e (Ω)cnatsiseR-nO ecruoS-ot-niarD –

0.350

0.300

VGS = 1.8 V

0.250

0.200

VGS = 2.5 V

)no(SD

0.150

r

0.100 01234

VGS – Gate-to-Source Voltage (V)

VGS = 4.5 V

On-Resistance vs. Drain Current

1.0

0.8

)A( tnerruC niarD –I

0.6

0.4

D

0.2

0.0

TC = 125 °C

0.0 0.3 0.6 0.9 1.2 1.5

V

GS

TC = - 55 °C

TC = 25 °C

– Gate-to-Source Voltage (V)

Transfer Characteristics

160

)Fp( ec

120

na t

i c apaC

80

–

C

40

C

rss

0

0 4 8 12 16 20

C

VDS – Drain-to-Source Voltage (V)

oss

C

iss

Capacitance

8

ID = 1.6 A

7

)V (

e ga

6

tl oV ec

5

ru oS

4

-o t-e

ta

3

G –

2

SG

V

1

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

Qg – Total Gate Charge (nC)

Gate Charge

Document Number: 74296 S-62109-Rev. A, 23-Oct-06

VDS = 10 V

VDS = 16 V

1.80

1.60

e c n

a

1.40

ts

)

ise

dez i

lamr

R

-

1.20

n O

o

–

N(

) n o(SD

1.00

r

0.80

0.60

- 50 - 25 0 25 50 75 100 125 150

ID = 1.6 A VGS = 1.8, 2.5, 4.5 V

– Junction Temperature (°C)

T

J

On-Resistance vs. Junction Temperature

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Vishay SI1988DH Schematic [ru]