Vishay Si1972DH Schematic

Si1972DH

Dual N-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V) r

30

S

1

G

1

D

2

Ordering Information: Si1972DH-T1-E3 (Lead (Pb)-free)

0.190 at V

0.344 at V

SOT-363

SC-70 (6-LEADS)

1

2

3

Top V iew

DS(on)

(Ω)

GS

6

5

4

= 10 V

= 4.5 V

D

1

G

2

S

2

I

(A)

D

1.3

New Product

a

Qg (Typ)

0.91 nC

M a rking Code

CE XX

Y Y

P a rt # Code

FEATURES

• TrenchFET® Power MOSFET

APPLICATIONS

• Load switch for portable applications

Lot Tr a ce ab ility a nd D a te Code

G

1

N-Ch a nnel MO S FET

Vishay Siliconix

RoHS

COMPLIANT

D

1

G

2

S

1

N-Ch a nnel MO S FET

2

S

2

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

C

T

= 70 °C

Continuous Drain Current (T

= 150 °C)

J

C

TA = 25 °C

TA = 70 °C

Pulsed Drain Current I

T

= 25 °C

Continuous Source-Drain Diode Current

Maximum Power Dissipation

C

T

= 25 °C

A

T

= 25 °C

C

T

= 70 °C

C

= 25 °C

T

A

P

TA = 70 °C

Operating Junction and Storage Temperature Range TJ, T

Soldering Recommendations (Peak Temperature)

d, e

DS

GS

I

D

DM

I

S

D

stg

30

± 20

a

1.3

a

1.3

a

1.3

1.2

4

1.0

c

0.61

1.25

0.8

b, c

0.74

b, c

0.47

- 55 to 150

260

V

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b, f

Maximum Junction-to-Foot (Drain)

Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 5 sec. d. Maximum under Steady State conditions is 220 °C/W.

t ≤ 5 sec

Steady State

R

thJA

R

thJF

130 170

80 100

°C/W

Document Number: 74398 S-62442-Rev. A, 27-Nov-06

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1

Si1972DH

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

Static

Drain-Source Breakdown Voltage

Temperature Coefficient

V

DS

V

Temperature Coefficient

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n - O n D e l a y T im e

Rise Time

Turn-Off Delay Time

Fall Time

Turn-on Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

V

ΔV

GS(th)/TJ

V

GS(th)

I

D(on)

r

DS(on)

C

Q

t

d(on)

t

d(off)

t

d(on)

t

d(off)

I

V

DS

DS/TJ

GSS

DSS

g

fs

iss

oss

rss

Q

g

gs

gd

R

g

t

r

t

f

t

r

t

r

I

S

SM

SD

t

rr

Q

rr

t

a

t

b

VGS = 0 V, ID = 250 µA 30 V

ID = 250 µA

V

= VGS, ID = 250 µA 1.5 2.8 V

DS

VDS = 0 V, VGS = ± 20 V ± 100 ns

V

= 30 V, V

DS

V

= 30 V, V

DS

≤ 5 V, V

V

DS

V

= 10 V, ID = 1.3 A 0.155 0.225

GS

= 4.5 V, ID = 0.29 A 0.278 0.340

V

GS

= 0 V, TJ = 55 °C 10

GS

= 10 V 4 A

GS

VDS = 15 V, ID = 1.3 A 1.4 S

VDS = 15 V, V

= 0 V, f = 1 MHz

GS

VDS = 15 V, V

V

= 15 V, V

DS

= 10 V, ID = 1.3 A 1.85 2.8

GS

= 4.5 V, ID = 1.3 A

GS

f = 1 MHz 4.5 Ω

= 15 V, RL = 12.5 Ω

V

DD

I

≅ 1.2 A, V

D

= 4.5 V, Rg = 1 Ω

GEN

VDD = 15 V, RL = 12.5 Ω

I

≅ 1.2 A, V

D

= 10 V, Rg = 1 Ω

GEN

TC = 25 °C 1

IS = 1.2 A, V

GS

IF = 1.2 A, di/dt = 100 A/µs, TJ = 25 °C

23.5

- 4.6

mV/°C

= 0 V 1

75

18

6

0.91 1.4

0.51

0.3

15 25

50 75

715

15 25

510

10 15

612

4

= 0 V 0.85 1.2 V

20 40 ns

18 36 nC

16

4

µA

Ω

pFOutput Capacitance

nC

ns

A

ns

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Document Number: 74398

S-62442-Rev. A, 27-Nov-06

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si1972DH

Vishay Siliconix

4

V

= 10 thru 5 V

GS

3

) A ( t n e r r u C n i a r D - I

2

D

1

0

0.0 0.4 0.8 1.2 1.6 2.0

V

- Drain-to-Source Voltage (V)

DS

Output Characteristics

0.6

0.5

) ( ecnats

0.4

is eR-nO

0.3

-r

) n

0.2

o

( SD

0.1

V

= 4.5 V

GS

VGS = 10 V

4 V

3 V

1.0

0.8

) A ( t n e r r u C n i a r D - I

0.6

0.4

D

0.2

0.0 0123 4

V

- Gate-to-Source Voltage (V)

GS

TC = 125 °C

TC = 25 °C

T C = - 55 °C

Transfer Characteristics

100

80

)Fp( ecnatic

60

a

p

a

40

C C

20

C

iss

C

oss

0.0 0123 4

On-Resistance vs. Drain Current

10

I

= 1.3 A

)V( ega

tlo V

e cruo

S

-ot-eta

G

SG

V

D

8

6

4

2

0

0.0 0.5 1.0 1.5 2.0

Gate Charge

Document Number: 74398 S-62442-Rev. A, 27-Nov-06

ID - Drain Current (A)

V

= 15 V

DS

V

= 24 V

DS

Q g - Total Gate Charge (nC)

C

rss

0

0 5 10 15 20 25 30

V

- Drain-to-Source Voltage (V)

DS

Capacitance

1.8

VGS = 10 V and 4,5 V, ID = 1.3 A

1.6

e c

nats

1.4

)

is

d ezi

eR-nO

l

a

1.2

m ro

-r N

)

(

n o

1.0

( SD

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

T

- Junction Temperature (°C)

J

On-Resistance vs. Junction Temperature

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Vishay Si1972DH Schematic [ru]