Vishay Si1926DL Schematic

New Product

Dual N-Channel 60-V (D-S) MOSFET

Si1926DL

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) r

60

1.4 at V

3.0 at V

(Ω)

DS(on)

= 10 V 0.37

GS

= 4.5 V 0.25

GS

Q

(Typ)

(A)

I

D

g

0.47

FEATURES

•TrenchFET® Power MOSFET

• 100 % R

Test e d

g

• ESD Protected: 1800 V

APPLICATIONS

RoHS

COMPLIANT

• Low Power Load Switch

SOT-363

SC-70 (6-LEADS)

S

1

G

2

1

D

3

2

To p View

Ordering Information: Si1926DL-T1-E3 (Lead (Pb)-free)

D

6

1

Marking Code

5

G

2

S

4

2

PD XX

Y Y

Lot Traceability and Date Code

Part # Code

G

1

D

1

S

1

N-Channel MOSFET

G

2

N-Channel MOSFET

D

2

S

2

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

= 150 °C)

J

Continuous Source-Drain Diode Current

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T

= 25 °C

C

T

= 70 °C 0.30

C

T

= 25 °C

A

TA = 70 °C

T

= 25 °C

C

T

= 25 °C

A

= 25 °C

T

C

T

= 70 °C 0.33

C

T

= 25 °C

A

TA = 70 °C

V

DS

V

GS

60

± 20

V

0.37

I

D

I

DM

I

S

0.34

0.27

0.65

0.43

0.25

b, c

A

0.51

P

D

, T

T

J

stg

b, c

0.30

b, c

0.20

- 55 to 150 °C

W

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain)

Notes: a. Based on T b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 400 °C/W.

= 25 °C.

C

Document Number: 73684 S-72193-Rev. B, 22-Oct-07

b, d

t ≤ 5 s

Steady State

R

thJA

R

thJF

360 415

300 350

°C/W

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New Product

Si1926DL

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

Static

V

Drain-Source Breakdown Voltage V

Temperature Coefficient ΔVDS/T

DS

Temperature Coefficient ΔV

V

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

a

Forward Transconductance

Dynamic

b

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n-On D e l ay Tim e

Rise Time

Turn-Off DelayTime

Fall Time

V

DS

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

D(on)

r

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

J

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

a

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

V

DS

V

DS

I

D

= 0 V, ID = 250 µA

GS

ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 10 V

V

= 60 V, VGS = 0 V

DS

= 60 V, V

V

DS

V

DS

V

= 30 V, V

DS

= 30 V, V

DS

= 30 V, V

GS

DS

= 0 V, TJ = 85 °C

GS

= ≥ 10 V, V

= ≥ 7.5 V, V

GS

= 10 V, ID = 0.34

= 4.5 V, ID = 0.23

= 30 V, ID = 0.2 A

= 0 V, f = 1 MHz

GS

= 10 V, ID = 0.34

GS

= 4.5 V, ID = 0.34

GS

= 4.5 V 0.50

= 10 V 0.65

f = 1 MHz 160 240 Ω

= 30 V, RL = 100 Ω

V

DD

≅ 0.3 A, V

= 10 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = 0.3 A

IF = 0.6 A, di/dt = 100 A/µs

60 V

56.7

- 3

mV/°C

12.5V

± 150

10

nA

100

A

1.4

3

Ω

159 ms

18.5

7.5

pFOutput Capacitance

4.2

0.9 1.4

0.5 0.75

0.2

nC

0.15

6.5 10

12 18

13 22

ns

14 21

0.43

0.65

A

0.8 1.2 V

16.5 25 nC

13 20

13.5

ns

3

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 73684

S-72193-Rev. B, 22-Oct-07

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

0.7

V

= 10 V thru 5 V

0.6

0.5

)A( tnerruC niarD -I

0.4

0.3

GS

V

GS

= 4 V

Si1926DL

Vishay Siliconix

0.4

0.3

)A( tnerruC niarD -I

0.2

D

0.2

V

0.1

GS

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

- Drain-to-Source Voltage (V)

V

DS

Output Characteristics

3.0

2.5

(Ω e c n a t s i

2.0

s e R - n O -)

1.5

)no

1.0

( SD

r

V

GS

= 4.5 V

V

GS

= 10 V

0.5

0.0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

- Drain Current (A)

I

D

On-Resistance vs. Drain Current

= 3 V

D

0.1

T C = 25 °C

T C = 125 °C

0.0

T C = - 55 °C

01234

- Gate-to-Source Voltage (V)

V

GS

Transfer Characteristics Curves vs. Temp

32

24

)Fp( ecnat

icapa

16

C

- C

C

iss

C

oss

8

C

rss

0

0 102030405060

VDS - Drain-Source Voltage (V)

Capacitance

10

I

= 0.5 A

)V (

ega t

loV

e c

r uoS

D

8

6

-ot

-e

4

taG -

SG

2

V

0

0.0 0.3 0.6 0.9 1.2

Document Number: 73684 S-72193-Rev. B, 22-Oct-07

V

= 30 V

DS

V

= 48 V

DS

Qg - Total Gate Charge (nC)

- Gate Charge

Q

g

1.6 V

= 10 V, I D = 0.5 A

GS

1.4

e c n atsiseR-nO

)d

1.2

ez i

lam

ro

-

1.0

N

)n

(

o

(S D

r

V

= 4.5 V, I D = 0.2 A

GS

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

- Junction Temperature (°C)

T

J

On-Resistance vs. Junction Temperature

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Vishay Si1926DL Schematic [ru]