Vishay Si1913DH Schematic

Si1913DH

C/W

PRODUCT SUMMARY

V

(V) r

DS

0.490 @ VGS = -4.5 V

-20

SC-70 (6-LEADS)

1

S

1

2

G

1

3

D

2

SOT-363

0.750 @ VGS = -2.5 V - 0.81

1.10 @ VGS = -1.8 V - 0.67

6

5

4

New Product

Dual P-Channel 20-V (D-S) MOSFET

FEATURES

D TrenchFETr Power MOSFETS: 1.8-V Rated

DS(on)

D

1

G

2

S

2

(W) I

Marking Code

DC XX

YY

Lot Traceability and Date Code

Part # Code

D

-1.0

(A)

G

D Thermally Enhanced SC-70 Package

APPLICATIONS

D Load Switching D PA Switch D Level Switch

S

1

Vishay Siliconix

S

2

G

2

D

Top View

1

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 5 secs Steady State Unit

Drain-Source Voltage V Gate-Source Voltage V

a

Continuous Drain Current (TJ = 150_C)

Pulsed Drain Current I Continuous Diode Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

a

TA = 25_C TA = 85_C

TA = 25_C 0.74 0.57 TA = 85_C

P

I

DM

I

DS

GS

D

S

D

stg

- 1.0

- 0.72 -0.63

-0.61 -0.48

0.38 0.30

-20 "8

-3

-55 to 150 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State R

Notes a. Surface Mounted on 1” x 1” FR4 Board.

a

t v 5 sec 130 170

Steady State

R

thJA

thJF

170 220

80 100

-0.88

D

2

V

A

W

_C/W

Document Number: 71965 S-21482—Rev. A, 26-Aug-02

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Si1913DH

W

Vishay Siliconix

New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol T est Condition Min Typ Max Unit

Static

Gate Threshold Voltage V Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance Diode Forward Voltage

Dynamic

b

a

Total Gate Charge Q Gate-Source Charge Q Gate-Drain Charge Q Turn-On Delay Time t Rise Time t Turn-Off Delay Time t Fall Time t Reverse Recovery Time t

Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

g

V

d(on)

d(off)

fs

SD

g gs gd

r

f

rr

VDS = VGS, I

= -100 mA -0.45 1 V

D

VDS = 0 V, VGS = "8 V

VDS = -16 V, VGS = 0 V -1

VDS = -16 V, VGS = 0 V, TJ = 85_C -5

VDS = -5 V, VGS = -4.5 V -2 A

VGS = -4.5 V, ID = -0.88 A 0.400 0.490 VGS = -2.5 V, I

VGS = -1.8 V, I

= -0.71 A

D

= -0.2 A

D

VDS = -10 V, ID = -0.88 A 1.5 S

IS = -0.47 A, VGS = 0 V -0.85 -1.2 V

V

= -10 V, VGS = -4.5 V, ID = -0.88 A 0.3 nC

DS

VDD = -10 V, RL = 20 W

VDD = -10 V, RL = 20

ID ^ -0.5 A, V

= -4.5 V, RG = 6 W

GEN

IF = 0.47 A, di/dt = 100 A/ms

"100 nA

0.610 0.750

0.850 1.10

1.2 1.8

0.21 18 30 25 40 15 45 12 20 30 60

mA

W

ns

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Document Number: 71965

S-21482—Rev . A, 26-Aug-02

Si1913DH

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

3.0

VGS = 5 thru 3 .5V

2.5

2.0

1.5

1.0

- Drain Current (A)I

D

0.5

0.0 01234

1.6

Output Characteristics Transfer Characteristics

3 V

2.5 V

2 V

1.5 V

1 V

VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

Vishay Siliconix

3.0

2.5

2.0

1.5

1.0

- Drain Current (A)I

D

0.5

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V)

160

TC = -55_C

25_C

Capacitance

125_C

W )

- On-Resistance (r

DS(on)

- Gate-to-Source Voltage (V)

GS

V

VGS = 1.8 V

1.2

0.8

0.4

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VGS = 2.5 V

VGS = 4.5 V

ID - Drain Current (A)

Gate Charge

5

VDS = 10 V I

= 0.9 A

D

4

3

2

1

120

80

C - Capacitance (pF)

40

C

rss

0

024681012

On-Resistance vs. Junction Temperature

1.6

VGS = 4.5 V I

W)

(Normalized)

- On-Resistance (r

DS(on)

1.4

1.2

1.0

0.8

D

C

iss

C

oss

V

- Drain-to-Source Voltage (V)

DS

= 0.88 A

0

0.0 0.3 0.6 0.9 1.2 1.5

Document Number: 71965 S-21482—Rev . A, 26-Aug-02

Qg - Total Gate Charge (nC)

0.6

-50 -25 0 25 50 75 100 125 150 T

- Junction Temperature (_C)

J

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Vishay Si1913DH Schematic [ru]