Vishay SI1912EDH Schematic [ru]
Si1912EDH
C/W
PRODUCT SUMMARY
V
(V) r
DS
20
SOT-363
SC-70 (6-LEADS)
1
S
1
2
G
1
3
D
2
6
5
4
New Product
Dual N-Channel 20-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFETS: 1.8-V Rated
(W) I
DS(on)
0.280 @ VGS = 4.5 V
0.360 @ VGS = 2.5 V 1.13
0.450 @ VGS = 1.8 V 1.0
D
1
G
2
S
2
Marking Code
CA XX
Part # Code
YY
Lot Traceability
and Date Code
D
1.28
(A)
G
D ESD Protected: 2000 V
D Thermally Enhanced SC-70 Package
APPLICATIONS
D Load Switching
D PA Switch
D Level Switch
1 kW
Vishay Siliconix
D
1 kW
G
D
Top View
S
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage V
Gate-Source Voltage V
a
a
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Current I
Continuous Diode Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range TJ, T
_
a
a
TA = 25_C
TA = 85_C
TA = 25_C 0.74 0.57
TA = 85_C
P
I
DM
I
DS
GS
D
S
D
stg
1.28
0.92 0.81
0.61 0.48
0.38 0.30
20
"12
4
–55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain) Steady State R
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
a
t v 5 sec 130 170
Steady State
R
thJA
thJF
170 220
80 100
S
V
1.13
A
W
_C/W
Document Number: 71408
S-03176—Rev. A, 05-Mar-01
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1
Si1912EDH
W
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol T est Condition Min Typ Max Unit
Static
Gate Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
b
a
a
a
a
GS(th)
GSS
DSS
I
D(on)
r
DS(on)
DS(on)
g
V
fs
SD
VDS = VGS, I
= 100 mA 0.45 V
D
VDS = 0 V, VGS = "4.5 V
VDS = 0 V, VGS = "12 V
VDS = 16 V, VGS = 0 V 1
VDS = 16 V, VGS = 0 V, TJ = 85_C 5
VDS = 5 V, VGS = 4.5 V 2 A
VGS = 4.5 V, ID = 1.13 A 0.220 0.280
VGS = 2.5 V, I
VGS = 1.8 V, I
= 0.99 A
D
= 0.2 A
D
VDS = 10 V, ID = 1.13 A 2.6 S
IS = 0.48 A, VGS = 0 V 0.80 1.2 V
"1 mA
"10 mA
0.281 0.360
0.344 0.450
mA
W
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
d(on)
d(off)
g
V
gs
gd
r
f
= 10 V, VGS = 4.5 V, ID = 1.13 A 0.2 nC
DS
VDD = 10 V, RL = 20 W
VDD = 10 V, RL = 20
ID ^ 0.5 A, V
GEN
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
10
8
6
4
– Gate Current (mA)I
GSS
2
= 4.5 V, RG = 6 W
10,000
1,000
100
mA)
10
1
– Gate Current (I
0.1
GSS
0.01
0.65 1.0
0.23
45 70
85 130
350 530
210 320
Gate Current vs. Gate-Source V oltage
TJ = 150_C
TJ = 25_C
ns
0
0 4 8 12 16
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2
VGS – Gate-to-Source Voltage (V)
0.001
0 3 9 12 15
V
6
– Gate-to-Source Voltage (V)
GS
Document Number: 71408
S-03176—Rev. A, 05-Mar-01
Si1912EDH
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2.0
1.5
1.0
– Drain Current (A)I
D
0.5
0.0
01234
0.6
Output Characteristics Transfer Characteristics
VGS = 5 thru 2 V
1.5 V
1 V
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Vishay Siliconix
2.0
TC = –55_C
1.5
1.0
– Drain Current (A)I
D
0.5
0.0
0.0 0.5 1.0 1.5 2.0
VGS – Gate-to-Source Voltage (V)
140
Capacitance
25_C
125_C
0.5
W )
0.4
0.3
– On-Resistance (r
0.2
DS(on)
0.1
0.0
– Gate-to-Source Voltage (V)
GS
V
VGS = 1.8 V
VGS = 2.5 V
VGS = 4.5 V
0.0 0.5 1.0 1.5 2.0
ID – Drain Current (A)
Gate Charge
5
VDS = 10 V
I
= 1.13 A
D
4
3
2
1
120
100
80
60
C – Capacitance (pF)
40
20
0
048121620
1.6
1.4
W)
1.2
(Normalized)
1.0
– On-Resistance (r
DS(on)
0.8
C
iss
C
oss
C
rss
V
– Drain-to-Source Voltage (V)
DS
On-Resistance vs. Junction Temperature
VGS = 4.5 V
I
= 1.13 A
D
0
0.0 0.3 0.6 0.9 1.2 1.5
Document Number: 71408
S-03176—Rev. A, 05-Mar-01
Qg – Total Gate Charge (nC)
0.6
–50 –25 0 25 50 75 100 125 150
T
– Junction Temperature (_C)
J
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