VISHAY SFH6916 Technical data
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E
C
A
C
15
16
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E
C
A
C
13
14
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E
C
A
C
11
12
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C
A
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VISHAY
SFH6916
Vishay Semiconductors
Optocoupler, Phototransistor Output, Quad Channel, SOP-16,
Half Pitch Mini-Flat Package
Features
• SOP (Small Outline Package)
• Isolation Test Voltage, 3750 V
• High Collector-Emitter Voltage,
V
= 70 V
CEO
• Low Saturation Voltage
• Fast Switching Times
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, 0.050 " (1.27 mm) Spacing
Agency Approvals
• UL File #E52744 System Code U
RMS
(1.0 s)
The coupling devices are designed for signal transmission between two electrically separated circuits.
Description
The SFH6916 has a GaAs infrared emitter, which is
optically coupled to a silicon planar phototransistor
detector, and is incorporated in a 16-pin 50 mil lead
pitch miniflat package. It features a high current transfer ratio, low coupling capacitance, and high isolation
Order Information
Part Remarks
SFH6916 CTR 50 - 300 %, SMD-16
For additional information on the available options refer to
Option Information.
voltage.
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Test condition Symbol Value Unit
Reverse voltage V
DC Forward current I
Surge forward current t
Total power dissipation P
≤ 10 µsI
p
R
F
FSM
diss
6.0 V
50 mA
2.5 A
80 mW
Document Number 83687
Rev. 1.4, 20-Apr-04
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1
SFH6916
VISHAY
Vishay Semiconductors
Output
Parameter Test condition Symbol Val ue Unit
Collector-emitter voltage V
Emitter-collector voltage V
Collector current I
t
≤ 1.0 ms I
p
Total power dissipation per
CE
EC
C
C
P
diss
70 V
7.0 V
50 mA
100 mA
150 mW
channel
Coupler
Parameter Test condition Symbol Val ue Unit
Isolation test voltage between
V
ISO
emitter and detector (1.0 s)
Creepage ≥ 5.33 mm
Clearance ≥ 5.08 mm
Comparative tracking index per
DIN IEC 112/VDEo 303, part 1
Isolation resistance V
= 500 V, T
IO
= 500 V, T
V
IO
Storage temperature range T
Ambient temperature range T
Junction temperature T
= 25 °C R
amb
= 100 °C R
amb
IO
IO
stg
amb
j
Soldering temperature max. 10 s dip soldering distance
to seating plane ≥ 1.5 mm
Total power dissipation P
tot
3750 V
≥ 175
12
≥ 10
11
≥ 10
- 55 to + 125 °C
- 55 to +100 °C
100 °C
260 °C
70 mW
RMS
Ω
Ω
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
T
= 25 °C (except where noted)
amb
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Reverse current V
Capacitance C
= 5 mA V
F
= 6.0 V I
R
O
Thermal resistance R
F
R
C
O
thja
1.15 1.4 V
0.01 10 µA
14 pF
1000 K/W
Output
Parameter Test condition Symbol Min Ty p. Max Unit
Collector-emitter leakage
current
Collector-emitter capacitance V
= 20 V I
V
CE
= 5.0 V, f = 1.0 MHz C
CE
Thermal resistance R
CEO
CE
thja
2.8 pF
500 K/W
100 nA
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Document Number 83687
Rev. 1.4, 20-Apr-04
VISHAY
isfh6916_02
RL=1.9 kΩ
V
CC
=5V
I
C
50 Ω
I
F
Coupler
Parameter Test condition Symbol Min Ty p. Max Unit
Collector-emitter saturation
voltage
Coupling capacitance f = 1.0 MHz C
Current Transfer Ratio
Parameter Test condition Symbol Min Ty p. Max Unit
Current Transfer Ratio I
Switching Characteristics
Switching Operation (without saturation)
Parameter Test condition Symbol Min Ty p. Max Unit
Rise time I
Fall tim e I
Turn on time I
Turn off time I
Switching Operation (with saturation)
Parameter Test condition Symbol Min Ty p. Max Unit
Rise time I
Fall tim e I
Turn on time I
Turn off time I
= 20 mA, IC = 1.0 mA V
I
F
= 5.0 mA, VCC = 5.0 V CTR 50 300 %
F
= 2.0 mA, VCC = 10 V,
C
R
= 100 Ω
L
= 2.0 mA, VCC = 10 V,
C
= 100 Ω
R
L
= 2.0 mA, VCC = 10 V,
C
R
= 100 Ω
L
= 2.0 mA, VCC = 10 V,
C
= 100 Ω
R
L
= 16.0 mA, VCC = 5.0 V,
F
R
= 1.9 kΩ
L
= 16.0 mA, VCC = 5.0 V,
F
= 1.9 kΩ
R
L
= 16.0 mA, VCC = 5.0 V,
F
= 1.9 kΩ
R
L
= 16.0 mA, VCC = 5.0 V,
F
= 1.9 kΩ
R
L
CESAT
C
t
r
t
f
t
on
t
off
t
r
t
f
t
on
t
off
SFH6916
Vishay Semiconductors
0.1 0.4 V
1.0 pF
4.0 µs
3.0 µs
5.0 µs
4.0 µs
15 µs
0.5 µs
1.0 µs
30 µs
I
F
50 Ω
isfh6916_01
Fig. 1 Switching Operation (without Saturation)
Document Number 83687
Rev. 1.4, 20-Apr-04
RL=100 Ω
I
C
V
CC
=10V
Fig. 2 Switching Operation (with Saturation)
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