VISHAY SFH6916 Technical data

i179076

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16

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4

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14

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6

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11

12

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8

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VISHAY

SFH6916

Vishay Semiconductors

Optocoupler, Phototransistor Output, Quad Channel, SOP-16,
Half Pitch Mini-Flat Package

Features

• SOP (Small Outline Package)

• Isolation Test Voltage, 3750 V

• High Collector-Emitter Voltage,
V

= 70 V

CEO

• Low Saturation Voltage

• Fast Switching Times

• Temperature Stable

• Low Coupling Capacitance

• End-Stackable, 0.050 " (1.27 mm) Spacing

Agency Approvals

• UL File #E52744 System Code U

RMS

(1.0 s)

The coupling devices are designed for signal trans­mission between two electrically separated circuits.

Description

The SFH6916 has a GaAs infrared emitter, which is
optically coupled to a silicon planar phototransistor
detector, and is incorporated in a 16-pin 50 mil lead
pitch miniflat package. It features a high current trans­fer ratio, low coupling capacitance, and high isolation

Order Information

Part Remarks

SFH6916 CTR 50 - 300 %, SMD-16

For additional information on the available options refer to
Option Information.

voltage.

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Parameter Test condition Symbol Value Unit

Reverse voltage V

DC Forward current I

Surge forward current t

Total power dissipation P

≤ 10 µsI

p

R

F

FSM

diss

6.0 V

50 mA

2.5 A

80 mW

Document Number 83687

Rev. 1.4, 20-Apr-04

www.vishay.com

1

SFH6916

VISHAY

Vishay Semiconductors

Output

Parameter Test condition Symbol Val ue Unit

Collector-emitter voltage V

Emitter-collector voltage V

Collector current I

t

≤ 1.0 ms I

p

Total power dissipation per

CE

EC

C

C

P

diss

70 V

7.0 V

50 mA

100 mA

150 mW

channel

Coupler

Parameter Test condition Symbol Val ue Unit

Isolation test voltage between

V

ISO

emitter and detector (1.0 s)

Creepage ≥ 5.33 mm

Clearance ≥ 5.08 mm

Comparative tracking index per
DIN IEC 112/VDEo 303, part 1

Isolation resistance V

= 500 V, T

IO

= 500 V, T

V

IO

Storage temperature range T

Ambient temperature range T

Junction temperature T

= 25 °C R

amb

= 100 °C R

amb

IO

IO

stg

amb

j

Soldering temperature max. 10 s dip soldering distance

to seating plane ≥ 1.5 mm

Total power dissipation P

tot

3750 V

≥ 175

12

≥ 10

11

≥ 10

- 55 to + 125 °C

- 55 to +100 °C

100 °C

260 °C

70 mW

RMS

Ω

Ω

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input

T

= 25 °C (except where noted)

amb

Parameter Test condition Symbol Min Ty p. Max Unit

Forward voltage I

Reverse current V

Capacitance C

= 5 mA V

F

= 6.0 V I

R

O

Thermal resistance R

F

R

C

O

thja

1.15 1.4 V

0.01 10 µA

14 pF

1000 K/W

Output

Parameter Test condition Symbol Min Ty p. Max Unit

Collector-emitter leakage
current

Collector-emitter capacitance V

= 20 V I

V

CE

= 5.0 V, f = 1.0 MHz C

CE

Thermal resistance R

CEO

CE

thja

2.8 pF

500 K/W

100 nA

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2

Document Number 83687

Rev. 1.4, 20-Apr-04

VISHAY

isfh6916_02

RL=1.9 kΩ

V

CC

=5V

I

C

50 Ω

I

F

Coupler

Parameter Test condition Symbol Min Ty p. Max Unit

Collector-emitter saturation
voltage

Coupling capacitance f = 1.0 MHz C

Current Transfer Ratio

Parameter Test condition Symbol Min Ty p. Max Unit

Current Transfer Ratio I

Switching Characteristics

Switching Operation (without saturation)

Parameter Test condition Symbol Min Ty p. Max Unit

Rise time I

Fall tim e I

Turn on time I

Turn off time I

Switching Operation (with saturation)

Parameter Test condition Symbol Min Ty p. Max Unit

Rise time I

Fall tim e I

Turn on time I

Turn off time I

= 20 mA, IC = 1.0 mA V

I

F

= 5.0 mA, VCC = 5.0 V CTR 50 300 %

F

= 2.0 mA, VCC = 10 V,

C

R

= 100 Ω

L

= 2.0 mA, VCC = 10 V,

C

= 100 Ω

R

L

= 2.0 mA, VCC = 10 V,

C

R

= 100 Ω

L

= 2.0 mA, VCC = 10 V,

C

= 100 Ω

R

L

= 16.0 mA, VCC = 5.0 V,

F

R

= 1.9 kΩ

L

= 16.0 mA, VCC = 5.0 V,

F

= 1.9 kΩ

R

L

= 16.0 mA, VCC = 5.0 V,

F

= 1.9 kΩ

R

L

= 16.0 mA, VCC = 5.0 V,

F

= 1.9 kΩ

R

L

CESAT

C

t

r

t

f

t

on

t

off

t

r

t

f

t

on

t

off

SFH6916

Vishay Semiconductors

0.1 0.4 V

1.0 pF

4.0 µs

3.0 µs

5.0 µs

4.0 µs

15 µs

0.5 µs

1.0 µs

30 µs

I

F

50 Ω

isfh6916_01

Fig. 1 Switching Operation (without Saturation)

Document Number 83687

Rev. 1.4, 20-Apr-04

RL=100 Ω

I

C

V

CC

=10V

Fig. 2 Switching Operation (with Saturation)

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3

SFH6916

isfh6916_06

Collector Current (mA)

Collector-emitter Saturation Voltage, VCE(sat) (V)

100.000

10.000

1.000

0.100

0.010

0.001

0.0 0.2 0.4 0.6 0.8 1.0

IF=25mA

IF=10mA

IF= 5.0 mA

IF= 2.0 mA

IF= 1.0 mA

isfh6916_07

Normalized Output Current, CTR

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

Ambient Temperature, TA(°C)

–60 –40 –20 0 20 40 60 80 100

Normalized to 1.0 at TA=25°C
IF= 1.0 mA, VCE= 5.0 V

isfh6916_08

Ambient Temperature, TA(°C)

Normalized Output Current, CTR

1.2

1.0

0.8

0.6

0.4

0.2

0.0
–60 –40 –20 0 20 40 60 80 100

Normalized to 1.0 at TA=25°C
IF= 1.0 mA, VCE= 5.0 V

Vishay Semiconductors

VISHAY

Typical Characteristics (T

1.6

(V)

1.4

F

1.1

0.9

Forward Voltage, V

0.6

0.01 0.10 1.00 10.00 100.00

isfh6916_03

T = –25°C

T = –25°C

T=0°C

Forward Current, IF(mA)

= 25 °C unless otherwise specified)

amb

T = 100°C
T=75°C

T=50°C
T=25°C

Fig. 3 Diode Forward Voltage vs. Forward Current

80

70

(mA)

60

C

50

40

30

20

Collector Current, I

10

0

02 46810

isfh6916_04

IF=30mA

IF=20mA

IF=15mA

IF=10mA

IF=5mA

Collector to Emitter Voltage, VCE(V)

Fig. 6 Collector Current vs. Collector-Emitter Saturation Voltage

Fig. 4 Collector Current vs. Collector Emitter Voltage

1000.0

(nA)

CEO

100.0

10.0

1.0

–60 –40 –20 0 20 40 60 80 100

Collector to Emitter Dark Current, I

isfh6916_05

Fig. 5 Collector to Emitter Dark Current vs. Ambient Temperature

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4

Ambient Temperature, TA(°C)

Fig. 7 Normalized Output Current vs. Ambient Temperature

24 V

40 V

12 V

Fig. 8 Normalized Output Current vs. Ambient Temperature

Document Number 83687

Rev. 1.4, 20-Apr-04

VISHAY

isfh6916_12

t

off

t

r

t

pdon

t

on

t

d

t

f

10%

50%

90%

Output

Input

10%

50%

90%

t

s

t

pdoff

300

VCE= 5.0 V

250

200

SFH6916

Vishay Semiconductors

Typical for
CTR=250%

150

100

50

Current Transfer Ratio, CTR (%)

0

0.1 1.0 10.0 50 100.0

isfh6916_09

Forward Current, IF(mA)

Typical for
CTR=150%

Fig. 9 Current Transfer Ratio vs. Forward Current

100.0

ton

10.0

1.0

Switching Time, (µ s)

0.1

0 500 1000 1500 2000

isfh6916_10

Load Resistance, RL(ohm)

toff

td

ts

VCC= 5.0 V
IC= 2.0 mA

Fig. 12 Switching Time Measurement

Fig. 10 Switching Time vs. Load Resistance

1000

IF= 5.0 mA
VCC= 5.0 V
TA=25°C

100

CTR = 150%

10

Switching Time, (µs)

1

0

100 1000 10000 100000

isfh6916_11

Load Resistance, RL(Ω)

Fig. 11 Switching Time vs. Load Resistance

Document Number 83687

Rev. 1.4, 20-Apr-04

t

f

t

s

t

r

t

d

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5

SFH6916

Vishay Semiconductors

Package Dimensions in Inches (mm)

0.19 (4.83)

0.17 (4.32)

0.434 (11.02)

0.414 (10.52)

ISO Method A

0.080 (2.03)

0.075 (1.91)

0.034 (0.87)

0.024 (0.61)

.050 (1.27)

0.017 (0.43)

0.013 (0.33)

0.008 (0.20)

0.004 (0.10)

R .010 (.25)

.200 (5.08)
.290 (7.37)

0.220 (5.59)

0.200 (5.08)

40°

VISHAY

.014 (.36)

.036 (.91)

.045 (1.14)

10°

i178043

0.018 (0.46)

0.014 (0.36)

0.055 (1.40)

0.045 (1.14)

0.000 (0.00)

0.005 (0.13)

0.200 (5.08)

0.220 (5.59)

0.280 (7.11)

0.260 (6.60)

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Document Number 83687

Rev. 1.4, 20-Apr-04

VISHAY

SFH6916

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

Document Number 83687

Rev. 1.4, 20-Apr-04

www.vishay.com

7