VISHAY SFH690ABT, SFH690AT, SFH690BT, SFH690CT Technical data

i179065

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SFH690ABT/ AT/ BT/ CT

Vishay Semiconductors

Optocoupler, Phototransistor Output, SOP-4, Mini-Flat Package

Features

• SOP (Small Outline Package)

• Isolation Test Voltage, 3750 V

• High Collector-Emitter Breakdown Voltage,
V

= 70 V

CEO

• Low Saturation Voltage

• Fast Switching Times

• Temperature Stable

• Low Coupling Capacitance

• End-Stackable, .100 " (2.54 mm) Spacing

• Lead-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

RMS

(1.0 s)

e3

Pb

Pb-free

Agency Approvals

• UL1577, File No. E52744 System Code U

• CSA 93751

• BSI IEC60950 IEC60065

The coupling devices are designed for signal trans­mission between two electrically separated circuits.
The SFH690 series is available only on tape and reel.
There are 2000 parts per reel. Marking for SFH690AT
is SFH690A; SFH690BT is SFH690B; SFH690CT is
SFH690C; SFH690ABT will be marked as SFH690A

Applications

or SFH690B.
High density mounting or space sensitive PCBs
PLCs
Telecommunication

Description

The SFH690ABT/ AT/ BT/ CT family has a GaAs
infrared emitting diode emitter, which is optically cou­pled to a silicon planar phototransistor detector, and
is incorporated in a 4-pin 100 mil lead pitch miniflat
package. It features a high current transfer ratio, low

Order Information

Part Remarks

SFH690ABT CTR 50 - 300 %, SMD-4

SFH690AT CTR 50 - 150 %, SMD-4

SFH690BT CTR 100 - 300 %, SMD-4

SFH690CT CTR 100 - 200 %, SMD-4

For additional information on the available options refer to

Option Information.

coupling capacitance, and high isolation voltage.

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Parameter Test condition Symbol Val ue Unit

Reverse voltage V

DC Forward current I

Surge forward current t

Power dissipation P

Document Number 83686

Rev. 1.5, 20-Apr-04

≤ 10 µsI

p

F

FSM

diss

R

6.0 V

50 mA

2.5 A

80 mW

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SFH690ABT/ AT/ BT/ CT

Vishay Semiconductors

Output

Parameter Test condition Symbol Value Unit

Collector-emitter voltage V

Emitter-collector voltage V

Collector current I

t

≤ 1.0 ms I

p

Power dissipation P

CE

EC

C

C

diss

Coupler

Parameter Test condition Symbol Value Unit

Isolation test voltage between
emitter and detector (1.0 s)

Creepage ≥ 5.33 mm

Clearance ≥ 5.08 mm

Insulation thickness between
emitter and detector

Comparative tracking index per
DIN IEC 112/VDEO 0303, part 1

Isolation resistance V

= 500 V, T

IO

V

= 500 V, T

IO

= 25 °C R

amb

= 100 °C R

amb

Storage temperature range T

Ambient temperature range T

Junction temperature T

Soldering temperature max. 10 s Dip soldering distance

to seating plane
≥1.5 mm

V

T

ISO

IO

IO

stg

amb

j

sld

70 V

7.0 V

50 mA

100 mA

150 mW

3750 V

≥ 0.4 mm

≥ 175

12

≥ 10

11

≥ 10

- 55 to + 150 °C

- 55 to + 100 °C

100 °C

260 °C

RMS

Ω

Ω

200

150

100

50

Diode

tot

P –Power Dissipation (mW)

0

0 25 50 75 100 125 150

T

– Ambient Temperature ( qC )

18484

amb

Phototransistor

Figure 1. Permissible Power Dissipation vs. Ambient Temperature

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Document Number 83686

Rev. 1.5, 20-Apr-04

SFH690ABT/ AT/ BT/ CT

Vishay Semiconductors

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Parameter Test condition Symbol Min Ty p. Max Unit

Forward voltage I

Reverse current V

Capacitance V

Thermal resistance R

= 5 mA V

F

= 6.0 V I

R

= 0.0 V, f = 1.0 MHz C

R

Output

Parameter Test condition Symbol Min Ty p. Max Unit

Collector-emitter leakage
current

Collector-emitter capacitance V

Thermal resistance R

= 20 V I

V

CE

= 5.0 V, f = 1.0 MHz C

CE

F

R

O

thja

CEO

CE

thja

1.15 1.4 V

0.01 10 µA

14 pF

750 K/W

100 nA

2.8 pF

500 K/W

Coupler

Parameter Test condition Symbol Min Ty p. Max Unit

Collector-emitter saturation
voltage

Coupling capacitance f = 1.0 MHz C

= 10 mA, IC = 2.0 mA V

I

F

CEsat

C

0.1 0.3 V

0.3 pF

Current Transfer Ratio

Parameter Tes t co n d it i o n Part Symbol Min Ty p. Max Unit

I

C/IF

IF = 5.0 mA, VCE = 5.0 V SFH690AT CTR 50 150 %

SFH690BT CTR 100 300 %

SFH690CT CTR 100 200 %

SFH690ABT CTR 50 300 %

Document Number 83686

Rev. 1.5, 20-Apr-04

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SFH690ABT/ AT/ BT/ CT

isfh690at_03

80

70

60

50

40

30

20

10

0

0246810

Collector to Emitter Voltage, VCE(V)

IF=30mA

Collector Current, I

C

(mA)

IF=20mA

IF=15mA

IF=5mA

IF=10mA

isfh690at_04

1000.0

100.0

10.0

1.0

–60 –40 –20 0 20 40 60 80 100

12 V

24 V

40 V

Collector-Emitter Dark Current, I

CEO

(nA)

Ambient Temperature, TA(°C)

Vishay Semiconductors

Switching Characteristics

Parameter Test condition Symbol Min Ty p. Max Unit

Rise time I

Fall ti me I

Turn-on time I

Turn-off time I

= 2.0 mA, VCC = 5.0 V,

C

= 100 Ω

R

L

= 2.0 mA, VCC = 5.0 V,

C

= 100 Ω

R

L

= 2.0 mA, VCC = 5.0 V,

C

R

= 100 Ω

L

= 2.0 mA, VCC = 5.0 V,

C

= 100 Ω

R

L

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

t

r

t

f

t

on

t

off

3.0 µs

4.0 µs

5.0 µs

3.0 µs

I

F

RL=100Ω

V

50 Ω

isfh690at_01

Figure 2. Switching Operation (without Saturation)

1.6

(V)

1.4

F

1.1

0.9

Forward Voltage, V

0.6

0.01 0.10 1.00 10.00 100.00

isfh690at_02

Forward Current, IF(mA)

Figure 3. Diode Forward Voltage vs. Forward Current

T=–55°C

T=–25°C

T=0°C

T=100°C
T=75°C
T=50°C
T=25°C

CC

=5V

Figure 4. Collector Current vs. Collector Emitter Voltage

Figure 5. Collector to Emitter Dark Current vs. Ambient

Temperature

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Document Number 83686

Rev. 1.5, 20-Apr-04

100.000

isfh690at_08

Current Transfer Ratio, CTR (%)

Forward Current, IF (mA)

300

250

200

150

100

50

0

0.1 1.0 10.0 50 100.0

VCE=5.0 V

Typical for
CTR=250%

Typical for
CTR=150%

isfh690at_09

Switching Time (µs)

Load Resistance, RL(Ω)

100.0

10.0

1.0

0.1

0 500 1000 1500 2000

t

on

t

off

t

d

t

s

VCC= 5.0 V
IC=2.0mA

isfh690at_10

Switching Time, (µs)

Load Resistance, RL(Ω)

1000

100

10

1

0

100 1000 10000 100000

IF= 5.0 mA
VCC= 5.0 V
CTR = 150%

t

r

t

d

t

s

t

f

10.000

SFH690ABT/ AT/ BT/ CT

Vishay Semiconductors

1.000

0.100

0.010

Collector Current (mA)

0.001

0.0 0.2 0.4 0.6 0.8 1.0

isfh690at_05

Collector-Emitter Saturation Voltage, VCE(sat) (V)

IF=25mA

IF=10mA

IF= 5.0 mA

IF= 2.0 mA

IF= 1.0 mA

Figure 6. Collector Current vs. Collector-Emitter Saturation

Voltage

1.4

1.2

1.0

0.8

0.6

0.4

Normalized to 1.0 at TA=25°C

0.2
IF= 1.0 mA, VCE= 5.0 V

Normalized Output Current, CTR

0.0

–60 –40 –20 0 20 40 60 80 100

isfh690at_06

Ambient Temperature, TA(°C)

Figure 9. Current Transfer Ratio vs. Forward Current

Figure 7. Normalized Output Current vs. Ambient Temperature

1.2

1.0

0.8

0.6

0.4

0.2
Normalized to 1.0 at TA=25°C

IF= 5.0 mA, VCE= 5.0 V

Normalized Output Current, CTR

0.0

–60 –40 –20 0 20 40 60 80 100

isfh690at_07

Ambient Temperature, TA(°C)

Figure 8. Normalized Output Current vs. Ambient Temperature

Document Number 83686

Rev. 1.5, 20-Apr-04

Figure 10. Switching Time vs. Load Resistance

Figure 11. Switching Time vs. Load Resistance

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SFH690ABT/ AT/ BT/ CT

Vishay Semiconductors

Package Dimensions in Inches (mm)

i178037

0.190 (4.83)

0.170 (4.32)

0.024 (0.61)

0.034 (0.86)

0.080 (2.03)

0.075 (1.91)

0.018 (0.46)

0.014 (0.36)

0.105 (2.67)

0.095 (2.41)

4

1

0.184 (4.67)

0.164 (4.17)

3

ISO Method

2

Pin one I.D. (on chamfer side of package)

6°

LEADS COPLANARITY

0.004 (0.10) Max.

R .010 (.25)

A

.100 (2.54)

0.018 (0.46)

0.013 (0.33)

0.008 (0.20)

0.004 (0.10)

.200 (5.08)

.290 (7.37)

0.220 (5.59)

0.200 (5.08)

40°

0.025 (0.63)

0.015 (0.38)

0.284 (7.21)

0.264 (6.71)

10°

.014 (.36)

.036 (.91)

.045 (1.14)

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Document Number 83686

Rev. 1.5, 20-Apr-04

SFH690ABT/ AT/ BT/ CT

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

Document Number 83686

Rev. 1.5, 20-Apr-04

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