Vishay SD853C..S50K Series Data Sheet

SD853C..S50K Series

Vishay High Power Products

Fast Recovery Diodes

(Hockey PUK Version), 990 A

FEATURES

• High power FAST recovery diode series

DO-200AC (K-PUK)

PRODUCT SUMMARY

I

F(AV)

990 A

• 5.0 µs recovery time

• High voltage ratings up to 4500 V

• High current capability

• Optimized turn-on and turn-off characteristics

• Low forward recovery

• Fast and soft reverse recovery

• Press PUK encapsulation

• Case style conform to JEDEC DO-200AC (K-PUK)

• Maximum junction temperature 125 °C

• Lead (Pb)-free

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• Snubber diode for GTO

• High voltage freewheeling diode

• Fast recovery rectifier applications

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

F(AV)

I

F(RMS)

I

FSM

2

I

t

V

RRM

t

rr

T

J

Document Number: 93182 For technical questions, contact: [e-mail]
Revision: 14-May-08 1

T

hs

T

hs

50 Hz 19 000

60 Hz 19 900

50 Hz 1810

60 Hz 1652

Range 3000 to 4500 V

T

J

990 A

55 °C

1800 A

25 °C

5.0 µs

25

- 40 to 125

A

kA2s

°C

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SD853C..S50K Series

Vishay High Power Products

Fast Recovery Diodes

(Hockey PUK Version), 990 A

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

, MAXIMUM REPETITIVE PEAK

TYPE NUMBER

VOLTAGE

CODE

RRM

REVERSE VOLTAGE

V

30 3000 3100

SD853C..S50K

36 3600 3700

40 4000 4100

45 4500 4600

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current
at heatsink temperature

Maximum RMS forward current I

F(RMS)

Maximum peak, one-cycle forward,
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 18 050 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of forward
slope resistance

High level value of forward
slope resistance

Maximum forward voltage drop V

I

F(AV)

I

FSM

F(TO)1

F(TO)2

r

r

180° conduction, half sine wave
Double side (single side) cooled

25 °C heatsink temperature double side cooled 1800

t = 10 ms

t = 8.3 ms 19 900

t = 10 ms

t = 8.3 ms 16 750

t = 10 ms

t = 8.3 ms 1645

t = 10 ms

t = 8.3 ms 1165

(16.7 % x π x I
(I > π x I

(16.7 % x π x I

f1

(I > π x I

f2

Ipk = 2000 A, TJ = 125 °C;

FM

= 10 ms sinusoidal wave

t

p

No voltage
reapplied

50 % V
reapplied

No voltage
reapplied

50 % V
reapplied

F(AV)

), TJ = TJ maximum 1.67

F(AV)

F(AV)

), TJ = TJ maximum 0.65

F(AV)

V

RRM

RRM

< I < π x I

< I < π x I

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

Sinusoidal half wave,

= TJ maximum

initial T

J

), TJ = TJ maximum 1.50

F(AV)

), TJ = TJ maximum 0.70

F(AV)

I

MAXIMUM

RRM

= 125 °C

AT T

J

mA

100

990 (420) A

55 (85) °C

19 000

16 000

1805

1280

2.90 V

A

kA2s

V

mΩ

RECOVERY CHARACTERISTICS

CODE

MAXIMUM VALUE

AT T

= 25 °C

J

AT 25 % I

t

rr

RRM

(µs)

TEST CONDITIONS

I

pk

SQUARE

PULSE

dI/dt

(A/µs)

V

(V)

t

r

rr

(A)

S50 5.0 1000 100 - 50 6.5 1000 270

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2 Revision: 14-May-08

TYPICAL VALUES

AT 25 % I

(µs)

AT TJ = 125 °C

RRM

Q

rr

(µC)

I

(A)

I

FM

rr

t

rr

I

RM(REC)

t

Q

rr

dir

dt

Document Number: 93182

SD853C..S50K Series

Fast Recovery Diodes

Vishay High Power Products

(Hockey PUK Version), 990 A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction operating
temperature range

Maximum storage temperature range T

Maximum thermal resistance,
junction to heatsink

Mounting force, ± 10 % 22 250 (2250) N (kg)

Approximate weight 425 g

Case style See dimensions - link at the end of datasheet DO-200AC (K-PUK)

ΔR

CONDUCTION ANGLE

Note

• The table above shows the increment of thermal resistance R

CONDUCTION

thJ-hs

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

180° 0.0017 0.0019 0.0012 0.0012

120° 0.0021 0.0021 0.0021 0.0021

90° 0.0026 0.0027 0.0029 0.0029

60° 0.039 0.0039 0.0041 0.0041

30° 0.0067 0.0067 0.0068 0.0068

R

T

J

Stg

thJ-hs

- 40 to 125

- 40 to 150

DC operation single side cooled 0.04

DC operation double side cooled 0.02

TEST CONDITIONS UNITS

T

= TJ maximum K/W

J

when devices operate at different conduction angles than DC

thJ-hs

°C

K/W

Document Number: 93182 For technical questions, contact: [e-mail]
Revision: 14-May-08 3

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SD853C..S50K Series

)

Vishay High Power Products

130

120

110

100

90

80

70

60

50

40

0 100 200 300 400 500 600 700 800

Maximum Allowable Heatsink Temperature (°C)

Average Forward Current (A)

Fig. 1 - Current Ratings Characteristics

130

120

110

100

90

80

70

60

50

40

30

20

0 200 400 600 800 1000 1200

Maximum Allowable Heatsink Temp erature (°C)

Average Forward Current (A)

Fig. 2 - Current Ratings Characteristics

SD853C .. S50K Serie s
(Single Side Cooled)
R (DC) = 0.04 K/ W

thJ-hs

Cond uction Ang le

30°

60°

90°

SD853C ..S50K Se ries
(Single Side Cooled)
R (DC) = 0.04 K/ W

thJ-hs

Conduction Period

30°

60°

90°

120°

180°

120°

DC

Fast Recovery Diodes

(Hockey PUK Version), 990 A

130

120

110

100

180°

Maximum Allowable Heatsink Temperature (°C

4000

3500

3000

2500

2000

1500

1000

500

Maximum Average Forward Power Loss (W)

SD 85 3C . . S5 0K Se r ie s
(Double Side Cooled)
R (DC) = 0.02 K/ W

thJ-hs

90

80

70

60

50

40

30

20

10

0 400 800 1200 1600 2000

30°

60°

Ave ra g e Forw a rd Curre nt (A )

Conduction Period

90°

120°

180°

DC

Fig. 4 - Current Ratings Characteristics

180°
120°

90°
60°
30°

SD 8 5 3C . . S50 K Se r i e s
T = 125°C

J

0

0 200 400 600 800 1000 1200

Average Forward Current (A)

RM S L i m i t

Conduction Angle

Fig. 5 - Forward Power Loss Characteristics

130

120

110

100

90

80

70

60

50

40

30

0 200 400 600 800 1000 1200

Maximum Allowa ble Heatsink Te mperature (°C)

SD853C..S50K Se rie s
(Double Side Cooled)
R (DC) = 0.02 K/ W

thJ-hs

Conduction Angle

30°

60°

90°

120°

Average Forward Current (A)

180°

Fig. 3 - Current Ratings Characteristics

5000

4500

4000

3500

3000

2500

2000

1500

1000

Maximum Average Forward Power Loss (W)

DC
180°
120°

90°

60°

30°

Conduc tion Period

500

0

0 400 800 1200 1600 2000

Average Forward Current (A)

SD 8 5 3C . . S5 0 K Se r i e s
T = 125°C

J

Fig. 6 - Forward Power Loss Characteristics

RM S Li m it

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Document Number: 93182

4 Revision: 14-May-08

SD853C..S50K Series

Fast Recovery Diodes

(Hockey PUK Version), 990 A

18000

At Any Rated Load Cond ition And Wit h

50% Rated V Applied Following Surge

16000

14000

12000

10000

8000

6000

SD853C..S50K Series

Pea k Half Sine Wa ve Forw ard Curre nt (A)

4000

110100

Numb er Of Eq ual Amplitude Ha lf Cycle Current Pulses (N)

Fig. 7 - Maximum Non-Repetitive Surge Current

20000

18000

16000

14000

RRM

Init ia l T = 125 °C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

Single and Double Side Cooled

Maximum Non Repetitive Surge Current

Versus Pulse Tra in Dura tion .

50% Rated V Re ap plied

Init ial T = 125°C

No Voltage Re applied

J

RRM

Vishay High Power Products

10000

T = 25 ° C

J

T = 12 5° C

J

1000

SD853C ..S50K Series

Instantaneous Forward Current (A)

100

123456789

Instantaneous Forward Voltage (V)

Fig. 9 - Forward Voltage Drop Characteristics

0.1

SD853C..S50K Serie s

thJ-hs

0.01

12000

10000

8000

6000

SD853C..S50K Se rie s

Pea k Ha l f Sine Wa ve Fo rwa rd Current (A)

4000

0.01 0.1 1

Pulse Tra in Dura t io n ( s)

Fig. 8 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

300

V

250

200

150

100

Forward Recovery (V)

50

FP

I

Steady State Value

R = 0.04 K/ W

0.001

0.0001

Transient Thermal Imped anc e Z (K/ W)

0.001 0.01 0.1 1 10 100

Sq u a r e Wa v e Pu l se D u ra t i o n ( s)

Fig. 10 - Thermal Impedance Z

T = 125°C

J

T = 2 5° C

J

SD853C. .S50K Se ries

thJ-hs

(Single Side Cooled)

R = 0.02 K/ W

thJ-hs

(Double Side Cooled)

(DC Operation)

thJ-hs

Characteristics

0

0 200 400 600 800 1000 1200 1400 1600 1800 2000

Ra t e O f Rise O f Fo rw a r d Cu r r en t - d i / d t ( A / u s)

Fig. 11 - Typical Forward Recovery Characteristics

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Revision: 14-May-08 5

SD853C..S50K Series

Vishay High Power Products

10.5

10

9.5

9

8.5

8

7.5

7

6.5

6

5.5

5

4.5

Ma ximum Rev erse Rec overy Time - Trr (µs)

4

Rate Of Fall Of Forward Current - d i/ dt (A/µs)

Fig. 12 - Recovery Time Characteristics

2200

2000

1800

1600

1400

1200

1000

800

600

400

200

Maximum Reverse Rec overy Charge - Qrr (µC)

Ra te Of Fa ll Of Forwa rd C urrent - d i/ dt (A/ µs)

Fig. 13 - Recovery Charge Characteristics

SD853C..S50K Se rie s
T = 125 °C; V > 100V

J

r

I = 1500 A

FM

Si n e Pu l se

1000 A

500 A

10 100 1000

I = 1500 A

FM

Si n e Pu l se

1000 A

500 A

SD 85 3C . . S5 0 K Se r ie s
T = 125 °C ; V > 100V

J

0

0 50 100 150 200 250 300

r

Fast Recovery Diodes

(Hockey PUK Version), 990 A

1E4

1E3

Peak Forward Current (A)

1E2

1E1 1E2 1E3 1E4

1E4

1E3

Peak Forward Current (A)

1E2

1E1 1E2 1E3 1E4

10 joules per pulse

6

4

2

1

0.8

0.6

0.4

0.2

SD853C ..S50K Se ries

Si n u so i d a l Pu l se

T = 125°C, V = 1500V

J

tp

dv/dt = 1000V/µs

RRM

Pulse Ba se wi dt h ( µs)

Fig. 15 - Maximum Total Energy Loss

Per Pulse Characteristics

400

600

SD 8 53 C . . S50K Serie s
Si n u so i d a l Pu l se
T = 55°C, V = 1500V
dv / dt = 1000V/ us

RRM

C

6000

10000

4000

3000

1500

2000

1000

tp

100

200

Pu lse Ba se w i d t h ( µs)

Fig. 16 - Frequency Characteristics

50 Hz

800

700

600

500

400

I = 1500 A

FM

Si n e Pu l se

1000 A

500 A

1E4

1E3

SD 85 3 C . . S50 K Se ri e s
Trapezoidal Pulse
T = 125°C, V = 1500V

J

dv/dt = 1000V/µs
d i/d t = 300A/ µs

6

tp

4

2

RRM

10 joules per pulse

8

300

200

100

0

M a x im u m Re v e r se Re c o v e ry C u rr e nt - Ir r ( A )

Ra te Of Fall Of Forwa rd Current - di/ dt (A/ µs)

SD 8 5 3C . . S5 0 K Se r ie s
T = 125 °C ; V > 100V

J

r

0 50 100 150 200 250 300

Fig. 14 - Recovery Current Characteristics

Pea k Forw a rd Curre nt (A)

1E2

1E1 1E2 1E3 1E4

Fig. 17 - Maximum Total Energy Loss

1

0.8

0.6

0.4

Pu lse Ba sew id t h ( µ s)

Per Pulse Characteristics

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Document Number: 93182

6 Revision: 14-May-08

SD853C..S50K Series

(Hockey PUK Version), 990 A

1E4

tp

200

400

600

1000

1E3

Peak Forwa rd Curre nt (A )

1E2

1E1 1E2 1E3 1E4

4000

6000

10000

Fig. 18 - Frequency Characteristics Fig. 19 - Maximum Total Energy Loss

1500

2000

3000

Pu lse Ba se w id t h ( µ s)

SD 85 3 C . . S50 K Se r i e s

Trapezoidal Pulse

T = 5 5°C , V = 1500 V
d v/ dt = 1000V/ us,
di/dt = 300A/us

RRM

C

1E4

Fast Recovery Diodes

50 Hz

100

Vishay High Power Products

1E4

SD853C ..S50K Seri es
Trapezoida l Pulse
T = 1 2 5° C , V = 1 5 00 V

J

d v/ dt = 1000V/ µs
d i/d t = 100A/ µs

1E3

Pea k Forw a rd Curre n t (A )

1E2

1 E1 1E2 1 E3 1 E4

RRM

6

4

2

1

0.8

0.6

0.4

Pulse Basewidth (µs)

Per Pulse Characteristics

10 joules p er pulse

tp

200

400

600

1000

1500

1E3

4000

Peak Forward Current (A)

6000

10000

1E2

3000

2000

SD 85 3 C . . S50K Series
Tr a p e z o i d a l Pu l se
T = 55°C, V = 1500V

C

dv/dt = 1000V/us,

tp

di/dt = 100A/us

1E1 1E2 1E3 1E4

Pu lse Ba sew i d th ( µs)

Fig. 20 - Frequency Characteristics

50 Hz

100

RRM

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Revision: 14-May-08 7

SD853C..S50K Series

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

SD 85 3 C 45 S50 K

1

- Diode

2

- Essential part number

3

- 3 = Fast recovery

4

- C = Ceramic PUK

5

- Voltage code x 100 = V

6

-trr code

7

- K = PUK case DO-200AC (K-PUK)

Fast Recovery Diodes

(Hockey PUK Version), 990 A

51324

67

(see Voltage Ratings table)

RRM

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Document Number: 93182

DIMENSIONS in millimeters (inches)

3.5 (0.14) DIA. NOM. x

1.8 (0.07) deep MIN. both ends

Outline Dimensions

Vishay High Power Products

DO-200AC (K-PUK)

74.5 (2.93) DIA. MAX.

1 (0.04) MIN.

both ends

27.5 (1.08) MAX.

Quote between upper and lower pole pieces has to be considered after

application of mounting force (see Thermal and Mechanical Specifications)

47.5 (1.87) DIA. MAX.
2 places

67 (2.64) DIA. MAX.

Document Number: 95247 For technical questions concerning discrete products, contact: [e-mail]
Revision: 26-Nov-07 For technical questions concerning module products, contact: [e-mail]

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1

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Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
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are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
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