Vishay SD823C..C Series Data Sheet

B-43

PRODUCT SUMMARY

I

F(AV)

Vishay High Power Products

Fast Recovery Diodes

(Hockey PUK Version), 810/910 A

FEATURES

• High power FAST recovery diode series

• 2.0 to 3.0 µs recovery time

• High voltage ratings up to 2500 V

• High current capability

• Optimized turn-on and turn-off characteristics

• Low forward recovery

• Fast and soft reverse recovery

• Press PUK encapsulation

• Hockey PUK version case style B-43

• Maximum junction temperature 150 °C

• Lead (Pb)-free

• Designed and qualified for industrial level

810/910 A

TYPICAL APPLICATIONS

• Snubber diode for GTO

• High voltage freewheeling diode

• Fast recovery rectifier applications

SD823C..C Series

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS

I

F(AV)

I

F(RMS)

I

FSM

V

RRM

t

rr

T

J

T

hs

50 Hz 9300 9600

60 Hz 9730 10 050

Range 1200 to 2500 1200 to 2500 V

T

J

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

, MAXIMUM REPETITIVE PEAK

TYPE NUMBER

SD823C..C

VOLTAGE

CODE

12 1200 1300

16 1600 1700

20 2000 2100

25 2500 2600

RRM

REVERSE VOLTAGE

V

SD823C..C

S20 S30

810 910 A

55 55 °C

1500 1690

2.0 3.0 µs

25

- 40 to 150

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

AT T

I

RRM

J

UNITS

A

°C

MAXIMUM

= TJ MAXIMUM

mA

50

Document Number: 93181 For technical questions, contact: [e-mail]
Revision: 14-May-08 1

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SD823C..C Series

Vishay High Power Products

Fast Recovery Diodes

(Hockey PUK Version),

810/910 A

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS

Maximum average forward current
at heatsink temperature

Maximum RMS forward current I

Maximum peak, one-cycle forward,
non-repetitive current

Maximum I

Maximum I

2

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 4320 4600 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of forward
slope resistance

High level value of forward
slope resistance

Maximum forward voltage drop V

I

F(AV)

F(RMS)

I

FSM

F(TO)1

F(TO)2

r

r

180° conduction, half sine wave
Double side (single side) cooled

25 °C heatsink temperature double side cooled 1500 1690

t = 10 ms

t = 8.3 ms 9730 10 050

t = 10 ms

t = 8.3 ms 8190 8450

t = 10 ms

t = 8.3 ms 395 420

t = 10 ms

t = 8.3 ms 279 297

(16.7 % x π x I
(I > π x I

(16.7 % x π x I

f1

(I > π x I

f2

Ipk = 1500 A, TJ = TJ maximum

FM

t

= 10 ms sinusoidal wave

p

No voltage
reapplied

100 % V

RRM

reapplied

No voltage

Sinusoidal half wave,
initial T

reapplied

100 % V

RRM

reapplied

< I < π x I

F(AV)

), TJ = TJ maximum 1.11 1.06

F(AV)

< I < π x I

F(AV)

), TJ = TJ maximum 0.76 0.57

F(AV)

F(AV)

F(AV)

SD823C..C

S20 S30

810 (425) 910 (470) A

55 (85) 55 (85) °C

9300 9600

7820 8070

= TJ maximum

J

432 460

306 326

), TJ = TJ maximum 1.00 0.95

), TJ = TJ maximum 0.80 0.60

2.20 1.85 V

UNITS

A

2

kA

V

mΩ

s

RECOVERY CHARACTERISTICS

TYPICAL VALUES

AT TJ = 125 °C

AT 25 % I

(µs)

RRM

Q

(µC)

rr

3.5 240 110

I

(A)

I

FM

t

rr

dir

rr

t

dt

I

RM(REC)

Q

rr

CODE

MAXIMUM VALUE

= 25 °C

AT T

J

AT 25 % I

t

rr

RRM

(µs)

TEST CONDITIONS

I

pk

SQUARE

PULSE

dI/dt

(A/µs)

V

(V)

t

r

rr

(A)

S20 2.0

S30 3.0 5.0 380 130

1000 50 - 50

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction operating and storage
temperature range

Maximum thermal resistance,
case junction to heatsink

Mounting force, ± 10 % 9800 (1000) N (kg)

Approximate weight 83 g

Case style See dimensions - link at the end of datasheet B-43

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2 Revision: 14-May-08

T

R

, T

J

thJ-hs

Stg

DC operation single side cooled 0.076

DC operation double side cooled 0.038

- 40 to 150 °C

K/W

Document Number: 93181

SD823C..C Series

Fast Recovery Diodes

(Hockey PUK Version),

ΔR

CONDUCTION ANGLE

Note

• The table above shows the increment of thermal resistance R

CONDUCTION

thJ-hs

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

180° 0.007 0.007 0.005 0.005

120° 0.008 0.008 0.008 0.008

90° 0.010 0.010 0.011 0.011

60° 0.015 0.015 0.016 0.016

30° 0.026 0.026 0.026 0.026

160

140

120

100

SD823C..S20C Serie s
(Single Side Cooled)
R (DC) = 0.076 K/ W

thJ-hs

Cond uction Angle

Vishay High Power Products

810/910 A

TEST CONDITIONS UNITS

T

= TJ maximum K/W

J

when devices operate at different conduction angles than DC

thJ-hs

160

140

120

100

SD 8 2 3C . . S30 C Se r i e s
(Single Side Cooled)
R ( DC) = 0.076 K/W

thJ-hs

Cond uction Ang le

80

60

40

20

0 100 200 300 400 500 600 700

Maximum Allowable Heatsink Temperature (°C)

30°

Average Forward Current (A)

60°

90°

Fig. 1 - Current Ratings Characteristics

160

140

120

100

80

60

40

20

0 200 400 600 800 1000

Maximum Allowable Heat sink Temperature (°C)

SD823C..S20C Series
(Single Side Cooled)
R (DC) = 0.076 K/ W

thJ-hs

Cond uc tion Period

90°

60°

30°

Average Forward Current (A)

120°

180°

Fig. 2 - Current Ratings Characteristics

120°

180°

DC

80

30°

60°

60

40

20

0 100 200 300 400 500 600 700

Maximum Allowa ble Hea tsink Temperature (°C)

Average Forward Current (A)

90°

Fig. 3 - Current Ratings Characteristics

160

140

120

100

80

60

40

20

0

0 200 400 600 800 1000 1200

Maximum Allowable Heatsink Temperature (°C)

SD823C ..S30C Serie s
(Single Side Cooled)
R (DC) = 0.076 K/ W

thJ-hs

Conduction Period

30°

60°

90°

120°

180°

Average Forward Current (A)

Fig. 4 - Current Ratings Characteristics

120°

DC

180°

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Revision: 14-May-08 3

SD823C..C Series

Vishay High Power Products

160

140

120

100

80

60

40

20

0

0 200 400 600 800 1000

Maximum Allowable Heatsink Temperature (°C)

Fig. 5 - Current Ratings Characteristics

160

140

120

100

80

60

40

20

0

0 250 500 750 1000 1250 1500

Maximum Allowable Heatsink Temperature (°C)

Fig. 6 - Current Ratings Characteristics

SD 82 3C . . S20 C Se r i e s
(Double Side Cooled)
R (DC) = 0.038 K/ W

thJ-hs

Conduction Angle

90°

60°

30°

Average Forward Current (A)

SD 82 3C . . S2 0 C Se r i e s
(Double Side Cooled)
R (DC) = 0.038 K/W

thJ-hs

Cond uction Period

90°

60°

30°

Average Forward Current (A)

120°

180°

Fast Recovery Diodes

(Hockey PUK Version),

810/910 A

120°

180°

DC

160

140

120

100

80

60

40

20

0

0 400 800 1200 1600 2000

Maximum Allowable Heatsink Temperature (°C)

SD823C ..S30C Series
(Double Side Cooled)
R ( DC) = 0.038 K/W

thJ-hs

Conduction Period

30°

60°

90°

120°

180°

DC

Average Forward Current (A)

Fig. 8 - Current Ratings Characteristics

3000

2500

2000

1500

1000

500

Maximum Average Forwa rd Power Loss (W)

180°
120°

90°
60°
30°

SD 8 2 3C . . S20 C Se r i e s
T = 150°C

J

0

0 200 400 600 800 1000

Average Forward Current (A)

RM S Li m it

Cond uction Angle

Fig. 9 - Forward Power Loss Characteristics

160

140

120

100

80

60

40

20

0

0 200 400 600 800 1000 1200

Maximum Allowable Heatsink Temperature (°C)

SD823C ..S30C Series
(Doub le Side Cooled)
R (DC) = 0.038 K/ W

thJ-hs

Conduction Angle

90°

60°

30°

Average Forward Current (A)

Fig. 7 - Current Ratings Characteristics

120°

180°

3500

DC

3000

180°
120°

2500

90°
60°
30°

2000

1500

1000

500

0

Maximum Average Forward Power Loss (W)

0 200 400 600 800 1000 12001400 1600

Average Forward Current (A)

SD823C ..S20C Serie s
T = 1 50 °C

J

RM S Lim i t

Cond uction Period

Fig. 10 - Forward Power Loss Characteristics

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Document Number: 93181

4 Revision: 14-May-08

SD823C..C Series

3000

180°
120°

90°
60°
30°

SD823C ..S30C Serie s
T = 150°C

J

0 200 400 600 800 1000 1200

Average Forward Current (A)

RM S Li m i t

Cond uc tion Angle

Maximum Average Forward Power Loss (W)

2500

2000

1500

1000

500

0

Fig. 11 - Forward Power Loss Characteristics

3500

DC

3000

180°
120°

2500

90°
60°
30°

2000

1500

1000

500

0

Maximum Average Forward Power Loss (W)

0 400 800 1200 1600 2000

Av e ra ge Forw ard Curre n t (A)

SD 82 3C . . S30 C Se r i e s
T = 150°C

J

RM S Li m i t

Cond uction Period

Fig. 12 - Forward Power Loss Characteristics

Fast Recovery Diodes

(Hockey PUK Version),

810/910 A

Vishay High Power Products

10000

Peak Half Sine Wave Forward Current (A)

Fig. 14 - Maximum Non-Repetitive Surge Current

Peak Half Sine Wave Forward Current (A)

Fig. 15 - Maximum Non-Repetitive Surge Current

Maximum Non Re pe titive Surge Current

9000

8000

7000

6000

5000

4000

3000

SD 82 3C . . S20 C Se r ie s

2000

0.01 0.1 1

9000

At Any Rated Load Co ndition And With

Rated V Applied Following Surge.

8000

7000

6000

5000

4000

SD823C ..S30C Series

3000

110100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Versus Pulse Train Dura tion.

Pulse Tra in Dura t io n ( s)

RRM

Init ia l T = 150°C

No Voltage Reapplied
Rated V Reapplied

RRM

Init ia l T = 150 °C

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

J

J

9000

At Any Rated Load Condition And With

Rated V Applied Following Surge.

8000

7000

6000

5000

4000

3000

SD823C ..S20C Serie s

Peak Half Sine Wave Forward Current (A)

2000

110100

Numb er Of Equal Amplitude Half Cycle Current Pulses (N)

RRM

Initia l T = 150 °C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

Fig. 13 - Maximum Non-Repetitive Surge Current

10000

Pea k Ha lf Sine Wave Fo rw a rd Cu rre n t (A)

Maximum Non Repetitive Surge Current

9000

8000

7000

6000

5000

4000

SD 82 3C . . S30 C Se r ie s

3000

2000

0.01 0.1 1

Versus Pulse Train Dura tion.

Pulse Train Duration (s)

Init ia l T = 150°C

No Vo lt a ge Rea p p li ed
Rated V Reapplied

RRM

J

Fig. 16 - Maximum Non-Repetitive Surge Current

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Revision: 14-May-08 5

SD823C..C Series

Vishay High Power Products

10000

T = 2 5 ° C

J

T = 150°C

J

1000

SD 8 2 3C . .S2 0 C Se r ie s

Instantaneous Forward Current (A)

100

0.5 1 1.5 2 2.5 3 3.5 4 4. 5 5

Instantaneous Forward Voltage (V)

Fig. 17 - Forward Voltage Drop Characteristics Fig. 18 - Forward Voltage Drop Characteristics

0.1

thJ-hs

SD 8 23 C . . S2 0 / S3 0C Se r ie s

Fast Recovery Diodes

(Hockey PUK Version),

810/910 A

Instantaneous Forward Current (A)

10000

T = 2 5 ° C

J

T = 150°C

1000

SD823C ..S30C Serie s

100

0.511.522.533.54

Instantaneous Forward Voltage (V)

J

0.01

0.001

Tran sient The rma l Impe danc e Z (K/W)

0.001 0.01 0.1 1 10 100

100

V

FP

80

60

40

Fo rw ard Rec overy (V)

20

0

0 400 800 1200 1600 2000

Rate Of Rise Of Forward Current - di/dt (A/us)

I

T = 150°C

J

T = 2 5 ° C

J

SD 8 2 3C . . S2 0 C Se ri e s

Sq uare Wave Pulse Duration (s)

Fig. 19 - Thermal Impedance Z

thJ-hs

Steady State Value

R = 0.076 K/ W

thJ-hs

(Single Side Cooled )

R = 0.038 K/ W

thJ-hs

(Double Side Co oled )

(DC Op eration)

Characteristic

100

V

FP

80

60

40

Fo rw a rd Re c o v e ry ( V)

20

0

0 400 800 1200 1600 2000

Rate Of Rise Of Forward Current - di/dt (A/us)

I

SD 82 3 C . . S3 0 C Se r i e s

T = 150°C

J

T = 2 5° C

J

Fig. 20 - Typical Forward Recovery Characteristics Fig. 21 - Typical Forward Recovery Characteristics

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SD823C..C Series

Fast Recovery Diodes

(Hockey PUK Version),

6

5.5

4.5

3.5

2.5

Maximum Reverse Recovery Time - Trr (µs)

Ra t e Of Fa l l O f Fo rw a r d Cu r re n t - d i / d t (A / µ s)

Fig. 22 - Recovery Time Characteristics

800

700

600

500

400

300

200

100

M a xi m um Re v e rse Re c o v e ry C ha rg e - Q rr ( µC )

Rate Of Fall Of Fo rward Current - di/d t (A/µs)

Fig. 23 - Recovery Charge Characteristics

SD823C ..S20C Se ries
T = 1 50 °C; V > 100V

J

5

4

3

2

10 100 1000

SD823C. .S20C Series
T = 150 °C ; V > 100V

J

0

0 50 100 150 200 250 300

I = 10 00 A

FM

Sin e Pulse

500 A

150 A

I = 10 00 A

FM

Si n e Pu l se

r

500 A

150 A

r

810/910 A

Vishay High Power Products

7

6.5

5.5

4.5

3.5

2.5

Maximum Reverse Recovery Time - Trr (µs)

Ra te O f Fa ll Of Forwa rd Cu rrent - di/ dt (A/µs)

Fig. 25 - Recovery Time Characteristics

1200

1000

800

600

400

200

M a x im u m Re v e r se Re c o v e r y C h a rg e - Q rr ( µC )

Rate Of Fall Of Forward Current - di/d t (A/ µs)

Fig. 26 - Recovery Charge Characteristics

SD 82 3 C . . S30 C Se ri e s
T = 150 °C ; V > 100V

6

5

4

3

2

0

J

10 100 1000

SD823C. .S30C Series
T = 150 °C ; V > 100V

J

0 50 100 150 200 250 300

r

I = 10 00 A

FM

Si n e Pu l se

500 A

150 A

I = 1000 A

FM

Si n e Pu l se

500 A

150 A

r

450

I = 1000 A

400

350

300

250

200

150

100

50

0

Ma xim um Re verse Rec ov ery Curren t - Irr (A)

0 50 100 150 200 250 300

Rate Of Fall Of Forward Current - di/dt (A/µs)

FM

Si n e Pu l se

500 A

150 A

SD 82 3C . . S2 0C Se r ie s
T = 150 °C ; V > 100V

J

r

Fig. 24 - Recovery Current Characteristics

550

500

450

400

350

300

250

200

150

100

50

0

Ma ximu m Reve rse Rec ov ery Cu rrent - Irr ( A)

0 50 100 150 200 250 300

Ra t e O f Fa l l O f Fo rw a r d C ur re n t - d i / d t (A / µ s)

I = 1000 A

FM

Si n e P u ls e

500 A

150 A

SD 82 3C . . S3 0C Se r i e s
T = 150 °C; V > 100V

J

r

Fig. 27 - Recovery Current Characteristics

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Revision: 14-May-08 7

SD823C..C Series

Vishay High Power Products

Fast Recovery Diodes

(Hockey PUK Version),

1E4

10 jo ules p er p ulse

6

4

2

1

0.6

1E3

Peak Forward Current (A)

1E2

1E1 1E2 1E3 1E4

Fig. 28 - Maximum Total Energy Loss Per Pulse Characteristics

1E4

3000

4000

6000

1E3

15000

Peak Forward Current (A)

20000

0.4

0.2

0.1

0.08

SD 82 3 C . . S20 C Se r i e s
Si n u so i d a l P u l se
T = 150°C, V = 800V

J

tp

d v/ dt = 1000V/ µs

Pulse Basewid th (µs)

2000

1000

400

10000

tp

RRM

200

100

50 Hz

SD 82 3 C . . S20 C Se r ie s
Si n u so i d a l P u l se
T = 55 ° C , V = 8 0 0V

C

dv/dt = 1000V/us

RRM

810/910 A

1E4

100

200

400

600

1000

2000

6000

10000

15000

4000

20000

3000

SD 82 3 C . . S20 C Se r i e s
Trapezoida l Pulse
T = 55°C, V = 800V

C

dv/dt = 1000V/us,

tp

di/ dt = 300A/us

RRM

1E3

Peak Forward Current (A)

1E2

1E1 1E2 1E3 1E4

Pulse Ba sew id t h ( µs)

Fig. 31 - Frequency Characteristics

1E4

SD 8 2 3C . . S2 0 C Se r i e s
Trap ezoidal Pulse

J

T = 15 0° C , V = 80 0 V
dv/dt = 1000V/µs
di/dt = 100A/µs

1E3

Peak Forward Current (A)

RRM

10 jo ules p er p ulse

6

4

2

1

0.6

0.4

0.2

50 Hz

tp

1E2

1E11E21E31E4

Pulse Ba se w id t h ( µs)

Fig. 29 - Frequency Characteristics

1E4

10 jo ul es pe r p ulse

6

4

2

1

1E3

Peak Forward Current (A)

tp

1E2

1 E1 1 E2 1 E3 1 E4

0.8

0.6

0.4

SD 82 3 C . . S20 C Se r i e s
Trapezoidal Pulse
T = 150°C , V = 800V

J

dv/dt = 1000V/µs
d i/d t = 300A/ µs

RRM

Pulse Basewidth (µs)

Fig. 30 - Maximum Total Energy Loss Per Pulse Characteristics

1E2

1E1 1E2 1E3 1E4

Pulse Ba sew id t h ( µs)

Fig. 32 - Maximum Total Energy Loss Per Pulse Characteristics

1E4

1000

600

2000

3000

10000

6000

4000

SD 82 3 C . . S20C Series
Tr a p e z o i d a l Pu l se
T = 55°C, V = 800V

C

dv/dt = 1000V/us,

tp

di/d t = 100A/us

1E3

Peak Forward Current (A)

1E2

15000

20000

1E1 1E2 1E3 1E4

50 Hz100

200400

RRM

Pulse Ba se wi dt h (µs)

Fig. 33 - Frequency Characteristics

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Document Number: 93181

8 Revision: 14-May-08

SD823C..C Series

Fast Recovery Diodes

(Hockey PUK Version),

810/910 A

1E4

10 jo ule s p er p ulse

6

4

2

1

0.6

0.4

1E3

Pe ak Forwa rd Curren t (A)

1E2

1E1 1E2 1E3 1E4

Fig. 34 - Maximum Total Energy Loss Per Pulse Characteristics

1E4

1E3

Peak Forward Current (A)

20000

1E2

1E1 1E2 1E3 1E4

Fig. 35 - Frequency Characteristics

0.2

0.1

SD82 3C..S30C Series
Si n u so i d a l Pu l s e
T = 150°C, V = 800V

J

tp

d v/d t = 1000V/ µs

Pulse Ba se wi dt h (µ s)

2000

3000

4000

6000

10000

15000

Pu lse Ba se wid t h ( µs)

RRM

1000

400

SD 8 23 C . . S3 0C Se r i e s
Sinusoida l Pulse
T = 55°C, V = 800V

C

tp

dv/dt = 1000V/us

200

50 Hz

100

RRM

Vishay High Power Products

1E4

50 Hz

100

200

400

600

1000

1500

1E3

Pea k Forw a rd C urre nt (A)

1E2

1E1 1E2 1E3 1E4

1E4

1E3

Peak Forward Current (A)

1E2

1E1 1E2 1E3 1E4

Fig. 38 - Maximum Total Energy Loss Per Pulse Characteristics

2000

3000

4000

6000

10000

15000

SD 82 3 C . .S3 0 C Se r ie s
Trap ezoida l Pulse

T = 55°C, V = 800V

C

dv/dt = 1000V/us,

tp

di/dt = 300A/us

Pu lse Ba se w id t h (µ s)

Fig. 37 - Frequency Characteristics

10 jo ule s p er p ulse

6

4

2

1

0.6

0.4

SD 8 23 C . . S30 C Se r i e s

Trapezoidal Pulse

T = 150°C, V = 800V

J

dv/dt = 1000V/µs

tp

di/dt = 100A/µs

RRM

Pu lse Ba se wid t h ( µs)

RRM

1E4

10 jo ule s p er p ulse

6

4

2

1E3

Peak Forward Current (A)

0.4

1E2

tp

1E11E21E31E4

1

0.8

0.6

SD82 3C..S30C Serie s
Trap ezoida l Pulse
T = 1 5 0 ° C , V = 8 0 0 V

J

dv/dt = 1000V/µs
di/dt = 300A/µs

RRM

Pulse Basewidth (µs)

Fig. 36 - Maximum Total Energy Loss Per Pulse Characteristics

1E4

400

200

3000

2000

6000

1000

4000

100

1E3

10000

SD 8 23 C . . S3 0C Se r i e s

Peak Forward Current (A)

1E2

1E1 1E2 1E3 1E4

15000

20000

Sinusoida l Pulse

T = 55°C, V = 800V

C

tp

dv/dt = 1000V/us

RRM

Pu lse Ba se wid t h ( µs)

Fig. 39 - Frequency Characteristics

50 Hz

Document Number: 93181 For technical questions, contact: [e-mail]

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Revision: 14-May-08 9

SD823C..C Series

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

SD 82 3 C 25 S20 C

1 - Diode

2 - Essential part number

3 - 3 = Fast recovery

4 - C = Ceramic PUK

5 - Voltage code x 100 = V

6 -t

7 - C = PUK case B-43

Fast Recovery Diodes

(Hockey PUK Version),

810/910 A

51324

(see Voltage Ratings table)

RRM

code

rr

67

www.vishay.com For technical questions, contact: [e-mail]
10 Revision: 14-May-08

Document Number: 93181

DIMENSIONS in millimeters (inches)

3.5 (0.14) DIA. NOM. x

1.8 (0.07) deep MIN. both ends

Outline Dimensions

Vishay High Power Products

B-43

42 (1.65) DIA. MAX.

0.8 (0.03) MIN.
both ends

14.4 (0.57)

15.4 (0.61)

Quote between upper and lower pole pieces has to be considered after

application of mounting force (see Thermal and Mechanical Specifications)

25.3 (1) DIA. MAX.
2 places

40.5 (1.59) DIA. MAX.

Document Number: 95249 For technical questions concerning discrete products, contact: [e-mail]
Revision: 26-Nov-07 For technical questions concerning module products, contact: [e-mail]

www.vishay.com

1

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

®

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1