Vishay SD803C..C Series Data Sheet

Vishay High Power Products

Fast Recovery Diodes

(Hockey PUK Version), 845 A

FEATURES

• High power FAST recovery diode series

SD803C..C Series

• 1.0 to 1.5 µs recovery time

• High voltage ratings up to 1600 V

• High current capability

B-43

• Optimized turn-on and turn-off characteristics

• Low forward recovery

• Fast and soft reverse recovery

• Press PUK encapsulation

• Case style conform to JEDEC B-43

• Maximum junction temperature 125 °C

• Lead (Pb)-free

PRODUCT SUMMARY

I

F(AV)

845 A

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• Snubber diode for GTO

• High voltage freewheeling diode

• Fast recovery rectifier applications

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

F(AV)

I

F(RMS)

I

FSM

2

t

I

V

RRM

t

rr

T

J

T

hs

T

hs

50 Hz 11 295

60 Hz 11 830

50 Hz 640

60 Hz 583

Range 400 to 1600 V

T

J

845 A

55 °C

1326 A

25 °C

1.0 to 1.5 µs

25

- 40 to 125

A

kA2s

°C

RoHS

COMPLIANT

Document Number: 93180 For technical questions, contact: [e-mail]
Revision: 04-Aug-08 1

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SD803C..C Series

Vishay High Power Products

Fast Recovery Diodes

(Hockey PUK Version), 845 A

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

, MAXIMUM REPETITIVE PEAK

TYPE NUMBER

VOLTAGE

CODE

RRM

AND OFF-STATE VOLTAGE

V

04 400 500

SD803C..S10C

08 800 900

10 1000 1100

12 1200 1300

SD803C..S15C

14 1400 1500

16 1600 1700

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current
at heatsink temperature

Maximum RMS current I

F(RMS)

Maximum peak, one-cycle
non-repetitive forward current

Maximum I

Maximum I

2

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 6400 kA2√s

Low level of threshold voltage V

High level of threshold voltage V

Low level of forward slope resistance r

High level of forward slope resistance r

Maximum forward voltage drop V

I

F(AV)

I

FSM

F(TO)1

F(TO)2

180° conduction, half sine wave
Double side (single side) cooled

25 °C heatsink temperature double side cooled 1326

t = 10 ms

t = 8.3 ms 11 830

t = 10 ms

t = 8.3 ms 9945

t = 10 ms

t = 8.3 ms 583

t = 10 ms

t = 8.3 ms 412

(16.7 % x π x I
(I > π x I
(16.7 % x π x I

f1

(I > π x I

f2

Ipk = 2655 A, TJ = 25 °C; tp = 10 ms sinusoidal wave 1.89 V

FM

No voltage
reapplied

100 % V
reapplied

No voltage
reapplied

100 % V
reapplied

F(AV)

), TJ = TJ maximum 1.32

F(AV)

F(AV)

), TJ = TJ maximum 0.28

F(AV)

V

RRM

RRM

< I < π x I

< I < π x I

, MAXIMUM NON-REPETITIVE

RSM

PEAK VOLTAGE

V

Sinusoidal half wave,
initial T

= TJ maximum

J

), TJ = TJ maximum 1.02

F(AV)

), TJ = TJ maximum 0.38

F(AV)

I

MAXIMUM

RRM

= 125 °C

AT T

J

mA

45

845 (420) A

55 (75) °C

11 295

9500

640

451

kA

mΩ

A

2

s

V

RECOVERY CHARACTERISTICS

TYPICAL VALUES

AT TJ = 125 °C

t

AT 25 % I

rr

RRM

(µs)

2.0 45 34

Q

(µC)

I

rr

I

rr

FM

(A)

t

rr

I

RM(REC)

t

Q

rr

dir

dt

Document Number: 93180

CODE

MAXIMUM VALUE

= 25 °C

AT T

J

AT 25 % I

t

rr

RRM

(µs)

TEST CONDITIONS

I

pk

SQUARE

PULSE

dI/dt

(A/µs)

V

(V)

r

(A)

S10 1.0

S15 1.5 3.2 87 51

1000 25 - 30

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2 Revision: 04-Aug-08

SD803C..C Series

Fast Recovery Diodes

Vishay High Power Products

(Hockey PUK Version), 845 A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating temperature range T

Maximum storage temperature range T

Maximum thermal resistance,
junction to heatsink

Mounting force, ± 10 % 9800 (1000) N (kg)

Approximate weight 83 g

Case style See dimensions - link at the end of datasheet B-43

ΔR

CONDUCTION ANGLE

Note

• The table above shows the increment of thermal resistance R

CONDUCTION

thJ-hs

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

180° 0.006 0.007 0.005 0.005

120° 0.008 0.008 0.008 0.008

90° 0.010 0.010 0.011 0.011

60° 0.015 0.015 0.016 0.016

30° 0.026 0.026 0.026 0.026

R

J

Stg

thJ-hs

DC operation single side cooled 0.076

DC operation double side cooled 0.038

when devices operate at different conduction angles than DC

thJ-hs

- 40 to 125

- 40 to 150

TEST CONDITIONS UNITS

T

= TJ maximum K/W

J

°C

K/W

Document Number: 93180 For technical questions, contact: [e-mail]
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SD803C..C Series

Vishay High Power Products

130

120

110

100

90

80

70

0 50 100 150 200 250 30 0 350 400 450

Maximum Allowable Heatsink Temperature (°C)

Fig. 1 - Current Ratings Characteristics

130

120

110

100

90

80

70

60

50

0 100 200 300 400 500 600 700

Maximum Allowa ble He at sink Temperature (°C)

Fig. 2 - Current Ratings Characteristics

SD 80 3C . . C Se ri e s
(Single Side Cooled)
R (DC) = 0.076 K/W

thJ-hs

Cond uction Angle

30°

60°

90°

120°

Average Forward Current (A)

SD803C ..C Serie s
(Single Side Cooled)
R ( DC) = 0.076 K/W

thJ-hs

Cond uction Period

30°

60°

90°

120°

180°

Average Forward Current (A)

Fast Recovery Diodes

(Hockey PUK Version), 845 A

130

120

110

100

180°

Maximum Allowa ble He atsink Temp era ture (°C)

1600

1400

1200

1000

DC

Maximum Average Forward Power Loss (W)

SD 8 0 3C . . C Se r i e s
(Double Side Cooled)
R (DC) = 0.038 K/ W

thJ-hs

90

80

70

60

50

40

0200400600800100012001400

30°

Average Forward Current (A)

90°

60°

Conduction Period

120°

180°

DC

Fig. 4 - Current Ratings Characteristics

180°
120°

90°
60°
30°

800

600

400

200

0

0 100200300400500600700800900

Ave ra ge Forw a rd Curre nt (A)

RM S Lim i t

Cond uction Ang le

SD803C..C Se ries
T = 125°C

J

Fig. 5 - Forward Power Loss Characteristics

130

120

110

100

90

80

70

60

50

0 100 200 3 00 400 500 600 700 800 900

Maximum Allowable Heatsink Temperature (°C)

SD 80 3 C . . C Se r i e s
(Double Side Cooled)
R ( DC) = 0.038 K/ W

thJ-hs

Conduction Angle

30°

60°

90°

Average Forward Current (A)

Fig. 3 - Current Ratings Characteristics

120°

180°

2200

DC
180°
120°

90°
60°
30°

RM S L im it

Conduction Period

SD803C..C Se ries
T = 125° C

J

0 200 400 600 800 1000 1200 1400

Ave ra ge Forw a rd Curre nt (A)

Maximum Average Forward Power Loss (W)

2000

1800

1600

1400

1200

1000

800

600

400

200

0

Fig. 6 - Forward Power Loss Characteristics

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Document Number: 93180

4 Revision: 04-Aug-08

SD803C..C Series

Fast Recovery Diodes

(Hockey PUK Version), 845 A

10000

At Any Ra ted Load Condition And With

Rated V Applied Following Surge.

9000

8000

7000

6000

5000

SD 8 0 3 C . . C Se r ie s

Pe a k Ha lf Si ne Wa v e Fo rw a rd Cu rre nt (A )

4000

110100

Number Of Eq ual Amp litude Half Cyc le Curre nt Pulses (N)

RRM

Fig. 7 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

12000

Maximum Non Repetitive Surge Current

11000

10000

9000

8000

7000

6000

5000

4000

SD803C..C Se ries

Peak Half Sine Wave Forward Current (A)

3000

0.01 0.1 1

Versus Pulse Train Durat ion .

Pulse Train Duration (s)

Fig. 8 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

Initia l T = 125°C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

Initial T = 125°C

No Voltage Reapplied
Ra t e d V Re a p p l ie d

J

RRM

Vishay High Power Products

0.1

SD 8 03 C . .C Se r ie s

thJ-hs

0.01

0.001

Transient Thermal Impedance Z (K/W)

0.001 0.01 0.1 1 10 100

Squa re Wa ve Pulse Dura tion (s)

Fig. 10 - Thermal Impedance Z

2.2

2.1

2

1.9

1.8

1.7

Ma ximu m Re verse Rec ov e ry Time - Trr (µs)

1.6

Rat e Of Fa ll Of Fo rwa rd C urrent - d i/ d t (A /µ s)

Fig. 11 - Recovery Time Characteristics

St e a d y St a t e V a l u e

R = 0.076 K/ W

thJ-hs

(Single Side Cooled)

R = 0.038 K/ W

thJ-hs

(Double Side Cooled)

(DC Operation)

thJ-hs

SD 8 03 C . . S1 0 C Se r i e s
T = 125 °C; V = 30V

J

r

I = 1000 A

FM

Sq u a r e Pu l se

500 A

250 A

Characteristics

00101

10000

1000

T = 2 5° C

J

100

Insta nt a neo us Fo rw ard Curre nt (A)

10

00.511.522.533.544.5

Instantaneous Forward Voltage (V)

T = 125°C

J

SD 8 0 3C . . C Se ri e s

Fig. 9 - Forward Voltage Drop Characteristics

130

120

110

100

90

80

70

60

50

40

30

20

10 20 30 40 50 60 70 80 90 100

Maximum Reverse Recovery Charge - Qrr (µC)

Rat e Of Fa ll Of Forward Current - di/d t (A/µs)

I = 1000 A

FM

Sq u a r e Pu l se

500 A

250 A

SD 8 0 3 C . . S10 C Se ri e s
T = 125 °C; V = 30V

J

r

Fig. 12 - Recovery Charge Characteristics

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Revision: 04-Aug-08 5

SD803C..C Series

Vishay High Power Products

120

110

100

90

80

70

60

50

40

30

20

10

Ma ximum Reve rse Rec ove ry Curren t - Irr (A)

Rate Of Fall Of Forward Current - di/dt (A/µs)

Fig. 13 - Recovery Current Characteristics

4

3.5

3

2.5

Ma ximum Reve rse Rec ove ry Time - Trr ( µs)

2

Ra t e O f Fa ll O f Fo rw a rd C ur re nt - d i/ d t ( A/ µ s)

Fig. 14 - Recovery Time Characteristics

I = 1000 A

FM

Sq u a re P u ls e

500 A

250 A

SD 8 0 3C . . S1 0C Se r i e s
T = 125 °C; V = 30V

J

r

10 20 30 40 50 60 70 80 90 100

SD 80 3C . . S15 C Series
T = 125 °C; V = 30V

J

r

I = 1000 A

FM

Sq u a re P u l se

500 A

250 A

Fast Recovery Diodes

(Hockey PUK Version), 845 A

Rate Of Fall Of Forward Current - di/dt (A/ µs)

Fig. 15 - Recovery Charge Characteristics

00101

Rate Of Fa ll Of Forward C urrent - di/d t (A/µs)

Fig. 16 - Recovery Current Characteristics

200

I = 1000 A

180

FM

Sq u a re Pu l se

160

140

120

500 A

100

250 A

80

60

40

Maximum Reverse Recovery Charge - Qrr (µC)

140

130

120

SD 80 3C . . S1 5 C Se r i e s
T = 125 °C; V = 30V

J

10 20 30 40 50 60 70 80 90 100

I = 1000 A

FM

Sq u a r e Pu l se

110

100

500 A

90

80

70

250 A

60

50

40

30

20

Ma ximum Reverse Rec overy Current - Irr (A)

SD 80 3 C . . S15 C Series
T = 125 °C; V = 30V

J

10 20 30 40 50 60 70 80 90 100

r

r

1E4

1

0.4

1E3

0.02

1E2

0.01

Peak Forward Current (A)

tp

1E1

1E1 1E2 1E3 1E4

0.2

0.1

0.04

SD803C ..S10C Se ri es
Sin uso i da l Pu lse
T = 125°C, V = 800V
d v/ dt = 1000 V/ µs

RRM

J

Pu lse Ba sew i d t h ( µs)

10

4

2

20 joules per pulse

20 jou les pe r p ulse

10

4

2

1

0.4

0.2

0.1

0.04

SD 80 3 C. . S1 0C Se r i es
Tr a p e z o i d a l P u l se
T = 125°C, V = 800V

tp

dv/dt = 1000V/ µs; di/dt=50A/µs

RRM

J

1E11E21E31E4

Pu lse Ba se w i d t h ( µs)

Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics

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Document Number: 93180

6 Revision: 04-Aug-08

SD803C..C Series

(Hockey PUK Version), 845 A

1E4

0.4

1E3

1E2

Pea k Fo rwa rd C urrent (A)

tp

1E1

1E1 1E2 1E3 1E4

0.2

0.1

0.04

0.02

0.01

SD 80 3 C . . S1 5C Se r i e s
Sinusoida l Pulse

T = 125°C, V = 800V
dv/dt = 1000V/µs

RRM

J

Pu lse Ba se w id t h ( µ s)

ORDERING INFORMATION TABLE

Device code

10

4

2

1

Fig. 18 - Maximum Total Energy Loss Per Pulse Characteristics

SD 80 3 C 16 S15 C

Fast Recovery Diodes

20 jo ule s p er p ulse

Vishay High Power Products

20 jou les p er p ulse

10

4

2

1

0.4

0.2

0.1

SD 80 3 C . .S1 5 C Se ri e s
Tr a p e zo i d a l P u l se
T = 125° C, V = 800V

tp

d v/d t = 1000V/µs; di /d t=50A/ µs

1E1 1E2 1E3 1E4

RRM

J

Pu lse Ba se w id t h ( µs)

51324

1

- Diode

2

- Essential part number

3

- 3 = Fast recovery

4

- C = Ceramic PUK

5

- Voltage code x 100 = V

6

-trr code (see Recovery Characteristics table)

7

- C = PUK case B-43

(see Voltage Ratings table)

RRM

67

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Revision: 04-Aug-08 7

DIMENSIONS in millimeters (inches)

3.5 (0.14) DIA. NOM. x

1.8 (0.07) deep MIN. both ends

Outline Dimensions

Vishay High Power Products

B-43

42 (1.65) DIA. MAX.

0.8 (0.03) MIN.
both ends

14.4 (0.57)

15.4 (0.61)

Quote between upper and lower pole pieces has to be considered after

application of mounting force (see Thermal and Mechanical Specifications)

25.3 (1) DIA. MAX.
2 places

40.5 (1.59) DIA. MAX.

Document Number: 95249 For technical questions concerning discrete products, contact: [e-mail]
Revision: 26-Nov-07 For technical questions concerning module products, contact: [e-mail]

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1

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Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
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The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
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®

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are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
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