DO-205AB (DO-9)
PRODUCT SUMMARY
I
F(AV)
Vishay High Power Products
Standard Recovery Diodes
(Stud Version), 400 A
FEATURES
• Wide current range
• High voltage ratings up to 2400 V
• High surge current capabilities
• Stud cathode and stud anode version
• Standard JEDEC types
• Compression bonded encapsulations
• Lead (Pb)-free
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• Converters
400 A
• Power supplies
• Machine tool controls
• High power drives
• Medium traction applications
SD400N/R Series
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
F(AV)
I
F(RMS)
I
FSM
2
I
t
V
RRM
T
J
T
C
50 Hz 8250
60 Hz 8640
50 Hz 340
60 Hz 311
Range 1600 to 2400 V
480 A
120 °C
630
- 40 to 190 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
TYPE NUMBER
SD400N/R
, MAXIMUM REPETITIVE
VOLTAGE
CODE
16 1600 1700
24 2400 2500
RRM
PEAK REVERSE VOLTAGE
V
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
I
AT T
A
kA2s
MAXIMUM
RRM
= TJ MAXIMUM
J
mA
1520 2000 2100
SD400N/R Series
Vishay High Power Products
Standard Recovery Diodes
(Stud Version), 400 A
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
400 A
Maximum average forward current
at case temperature
Maximum RMS forward current I
Maximum peak, one-cycle forward,
non-repetitive surge current
Maximum I
Maximum I
2
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 3400 kA2√s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop V
I
F(AV)
F(RMS)
I
FSM
F(TO)1
F(TO)2
r
f1
r
f2
FM
180° conduction, half sine wave
DC at 110 °C case temperature 630
t = 10 ms
t = 8.3 ms 8640
t = 10 ms
t = 8.3 ms 7270
t = 10 ms
t = 8.3 ms 311
t = 10 ms
t = 8.3 ms 220
(16.7 % x π x I
= TJ maximum
T
J
(I > π x I
(16.7 % x π x I
= TJ maximum
T
J
(I > π x I
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
Sinusoidal half wave,
initial T
= TJ maximum
J
reapplied
100 % V
RRM
reapplied
< I < π x I
F(AV)
), TJ = TJ maximum 0.85
F(AV)
< I < π x I
F(AV)
), TJ = TJ maximum 0.51
F(AV)
F(AV)
F(AV)
),
),
Ipk = 1500 A, TJ = TJ maximum,
= 10 ms sinusoidal wave
t
p
120 °C
480 A
100 °C
8250
6940
340
241
0.80
0.55
1.62 V
kA
mΩ
A
2
s
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating
temperature range
Maximum storage temperature range T
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Maximum allowed
mounting torque ± 10 %
Approximate weight 250 g
Case style See dimensions (link at the end of datasheet) DO-205AB (DO-9)
R
R
T
J
Stg
thJC
thCS
- 40 to 190
°C
- 55 to 200
DC operation 0.11
K/W
Mounting surface, smooth, flat and greased 0.04
Not-lubricated threads 27 Nm
SD400N/R Series
Standard Recovery Diodes
Vishay High Power Products
(Stud Version), 400 A
ΔR
Note
• The table above shows the increment of thermal resistance R
CONDUCTION
thJC
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.020 0.013
120° 0.023 0.023
T
90° 0.029 0.031
= TJ maximum K/W
J
60° 0.042 0.044
30° 0.073 0.074
when devices operate at different conduction angles than DC
thJC
190
180
SD 4 0 0N / R Se r ie s
R (DC ) = 0.11 K/ W
thJC
170
160
Cond uction Angle
150
140
130
120
110
Maximum Allowab le Case Temp erature (°C)
0 50 100 150 200 250 300 350 400 450
30°
60°
90°
Average Forward Current (A)
120°
180°
190
180
SD 40 0 N / R Se r i e s
R (DC) = 0.11 K/W
thJC
170
160
150
Conduction Period
140
130
120
110
100
Maximum Allowable Case Temperature (°C)
0 100 200 300 400 500 600 700
30°
60°
90°
120°
180°
Average Forward Current (A)
DC
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
550
0
500
450
400
350
300
250
200
150
100
50
0
Maximum Average Forward Power Loss (W)
180°
120°
90°
60°
30°
Cond uction Angle
SD 40 0N / R Se r i e s
T = 19 0 °C
J
0
50 100 150 200 250 300 350 4 00
Average Forward Current (A)
0
.
3
K
0
.
RM S Li mi t
4
K
/
0
.6
K
/
1
K
/
W
1
.
8
K
/
10 30 50 70 90 110 130 150 170 19 0
Maximum Allowable Ambient Tem perat ure (°C)
.
R
1
K
t
h
0
.
2K
/
W
W
W
W
/
W
S
/
W
A
=
0
.
0
4
K
/
W
D
e
l
t
a
R
Fig. 3 - Forward Power Loss Characteristics
SD400N/R Series
Vishay High Power Products
800
700
600
500
400
300
200
100
Maximum Averag e Forward Pow er Loss (W)
8000
At Any Rated Load Condition And With
Rated V Applied Following Surge.
7000
RRM
6000
5000
4000
3000
SD 40 0N / R Se r i e s
Peak Half Sine Wave Forward Current (A)
2000
110100
Numb er Of Eq ua l Amp litud e Half Cyc le Cu rren t Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
DC
180°
120°
90°
60°
30°
RM S Li m it
0
0 100 200 300 400 500 600 700
Average Forward Current (A)
Init ial T = 190°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Standard Recovery Diodes
(Stud Version), 400 A
R
t
h
0
.
S
1
A
K
/
=
W
0
.
0
4
K
/
W
Pea k Half Sine Wave Forwa rd Current (A)
9000
8000
7000
6000
5000
4000
3000
2000
1000
D
e
0
.
2
K
/
W
0
.
3
K/
W
0
.
4
K
/
Conduc tion Period
SD 4 0 0N / R Se r ie s
T = 190°C
J
W
0
.
6
K
/
W
1
K
/
W
1
.
8
K
/
W
10 30 50 70 90 110 13 0 150 170 190
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
l
t
a
R
Maximum Non Repetitive Surge Current
Versus Pulse Train Durat ion.
Init ial T = 190° C
J
No Volt ag e Rea pp lie d
Rated V Reapplied
RRM
SD 4 0 0N / R Se r i e s
0.01 0.1 1
Pulse Tra in Du ra t io n (s)
10000
SD 40 0N / R Se r i e s
1000
T = 25 ° C
J
T = 19 0 ° C
J
Instantaneous Forward Current (A)
100
0.5 1 1.5 2 2.5
In st a nt a n e o us Fo rw a rd V olt a g e ( V)
Fig. 7 - Forward Voltage Drop Characteristics
SD400N/R Series
Standard Recovery Diodes
1
thJC
0.01
Transient Thermal Impedance Z (K/ W)
0.001
ORDERING INFORMATION TABLE
Device code
St e a d y St a t e V a l u e :
R = 0.11 K/ W
0.1
thJC
(DC Operation)
0.001 0.01 0.1 1 10
SD 40 0 N 24 P C
(Stud Version), 400 A
Sq u a re Wa v e Pu l se D u r a t i o n ( s )
Fig. 8 - Thermal Impedance Z
SD 40 0 N / R Se r i e s
Characteristic
thJC
Vishay High Power Products
51324
67
1 - Diode
2 - Essential part number
3 - 0 = Standard recovery
4 - N = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
5 - Voltage code x 100 = V
(see Voltage Ratings table)
RRM
6 - P = Stud base DO-205AB (DO-9) 3/4" 16UNF-2A
7
- C = Ceramic housing
For metric device M16 x 1.5 contact factory
DIMENSIONS in millimeters (inches)
Outline Dimensions
Vishay High Power Products
DO-205AB (DO-9)
Ceramic housing
210 (8.27)
± 10 (0.39)
82 (3.23)
MIN.
DIA. 8.5 (0.33) NOM.
DIA. 27.5
(1.08) MAX.
21 (0.82)
MAX.
9.5 (0.37) MIN.
16 (0.63)
MAX.
19 (0.75)
MAX.
39 (1.53)
MAX.
C.S. 35 mm
(0.054 s.i.)
SW 32
4 (0.16)
MAX.
2
3/4"-16UNF-2A*
*For metric device: M16 x 1.5
contact factory
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Disclaimer
All product specifications and data are subject to change without notice.
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therein, which apply to these products.
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