Vishay SD303C..C Series Data Sheet

Vishay High Power Products

Fast Recovery Diodes

(Hockey PUK Version), 350 A

FEATURES

• High power FAST recovery diode series

SD303C..C Series

• 1.0 to 2.0 µs recovery time

• High voltage ratings up to 2500 V

• High current capability

• Optimized turn-on and turn-off characteristics

DO-200AA

• Low forward recovery

• Fast and soft reverse recovery

• Press PUK encapsulation

• Case style conform to JEDEC DO-200AA

• Maximum junction temperature 125 °C

PRODUCT SUMMARY

I

F(AV)

350 A

• Lead (Pb)-free

TYPICAL APPLICATIONS

• Snubber diode for GTO

• High voltage freewheeling diode

• Fast recovery rectifier applications

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

F(AV)

I

F(RMS)

I

FSM

2

I

t

V

RRM

t

rr

T

J

T

hs

T

hs

50 Hz 5770

60 Hz 6040

50 Hz 166

60 Hz 152

Range 400 to 2500 V

T

J

350 A

55 °C

550 A

25 °C

1.0 to 2.0 µs

25

- 40 to 125

A

kA2s

°C

RoHS

COMPLIANT

Document Number: 93174 For technical questions, contact: [e-mail]
Revision: 04-Aug-08 1

www.vishay.com

SD303C..C Series

Vishay High Power Products

Fast Recovery Diodes

(Hockey PUK Version), 350 A

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

, MAXIMUM REPETITIVE PEAK

TYPE NUMBER

VOLTAGE

CODE

RRM

AND OFF-STATE VOLTAGE

V

04 400 500

SD303C..S10C

08 800 900

10 1000 1100

12 1200 1300

SD303C..S15C

14 1400 1500

16 1600 1700

SD303C..S20C

20 2000 2100

25 2500 2600

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current
at heatsink temperature

Maximum RMS current I

F(RMS)

Maximum peak, one-cycle ,
non-repetitive forward current

Maximum I

Maximum I

2

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1660 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level of forward slope resistance r

High level of forward slope resistance r

Maximum forward voltage drop V

I

F(AV)

I

FSM

F(TO)1

F(TO)2

180° conduction, half sine wave
Double side (single side) cooled

25 °C heatsink temperature double side cooled 550

t = 10 ms

t = 8.3 ms 6040

t = 10 ms

t = 8.3 ms 5080

t = 10 ms

t = 8.3 ms 152

t = 10 ms

t = 8.3 ms 107

(16.7 % x π x I
(I > π x I
(16.7 % x π x I

f1

(I > π x I

f2

Ipk = 1100 A, TJ = 25 °C; tp = 10 ms sinusoidal wave 2.26 V

FM

No voltage
reapplied

100 % V
reapplied

No voltage
reapplied

100 % V
reapplied

F(AV)

), TJ = TJ maximum 1.63

F(AV)

F(AV)

), TJ = TJ maximum 0.77

F(AV)

V

RRM

RRM

< I < π x I

< I < π x I

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

Sinusoidal half wave,
initial T

= TJ maximum

J

), TJ = TJ maximum 1.14

F(AV)

), TJ = TJ maximum 1.14

F(AV)

I

MAXIMUM

RRM

= 125 °C

AT T

J

mA

35

350 (175) A

55 (75) °C

5770

4850

166

117

A

kA2s

V

mΩ

RECOVERY CHARACTERISTICS

TYPICAL VALUES

AT T

= 125 °C

J

RRM

(µs)

Q

(µC)

rr

2.4 52 33

I

(A)

I

rr

FM

t

rr

I

RM(REC)

t

Q

rr

dir

dt

Document Number: 93174

CODE

MAXIMUM VALUE

AT T

= 25 °C

J

AT 25 % I

t

rr

RRM

(µs)

TEST CONDITIONS

I

pk

SQUARE

PULSE

dI/dt

(A/µs)

V

(V)

r

t

AT 25 % I

rr

(A)

S10 1.0

S15 1.5 2.9 90 44

750 25 - 30

S20 2.0 3.2 107 46

www.vishay.com For technical questions, contact: [e-mail]
2 Revision: 04-Aug-08

SD303C..C Series

Fast Recovery Diodes

Vishay High Power Products

(Hockey PUK Version), 350 A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating temperature range T

Maximum storage temperature range T

Maximum thermal resistance,
junction to heatsink

Mounting force, ± 10 % 4900 (500) N (kg)

Approximate weight 70 g

Case style See dimensions - link at the end of datasheet DO-200AA

ΔR

CONDUCTION ANGLE

Note

• The table above shows the increment of thermal resistance R

CONDUCTION

thJ-hs

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

180° 0.010 0.011 0.008 0.008

120° 0.012 0.013 0.013 0.013

90° 0.016 0.016 0.018 0.018

60° 0.024 0.024 0.025 0.025

30° 0.042 0.042 0.042 0.042

R

J

Stg

thJ-hs

DC operation single side cooled 0.16

DC operation double side cooled 0.08

when devices operate at different conduction angles than DC

thJ-hs

- 40 to 125

- 40 to 150

TEST CONDITIONS UNITS

T

= TJ maximum K/W

J

°C

K/W

Document Number: 93174 For technical questions, contact: [e-mail]
Revision: 04-Aug-08 3

www.vishay.com

SD303C..C Series

Vishay High Power Products

130

120

110

100

90

80

70

60

0 20 40 60 80 100 120 140 160 180

Maximum Allowable Heatsink Temperature (°C)

Averag e Forw ard Current (A )

Fig. 1 - Current Ratings Characteristics

130

120

110

100

90

80

70

60

50

0 50 100 150 200 250 300

Maxim um Allowable Heatsink Temperature (°C)

Average Forward Current (A)

Fig. 2 - Current Ratings Characteristics

SD303C..C Series
(Single Side Cooled)
R (DC ) = 0 .1 6 K/ W

th J-hs

Conduction Angle

30°

60°

SD 303C ..C S eries
(Single Side Coo led )
R ( D C ) = 0 . 1 6 K /W

thJ-h s

Conduction Period

30°

60°

90°

120°

180°

90°

Fast Recovery Diodes

(Hockey PUK Version), 350 A

180°

120°

Maximum Allow able Heatsink Temperature (°C)

DC

130

120

110

100

90

80

70

60

50

40

0 100 200 300 400 500 600

SD303C..C Series
(D ou ble Side C o oled )
R (DC) = 0.08 K/W

th J-hs

Conduction Period

30°

60°

90°

120°

180° DC

Average Forward Current (A)

Fig. 4 - Current Ratings Characteristics

800

700

600

500

400

300

200

100

0

Maximum Average Forward Power Loss (W)

180°
120°

90°
60°
30°

0 50 100 150 200 250 300 350 400

Average Forward Current (A)

RMS Limit

Conduction Angle

SD 3 0 3C ..C Se ries
T = 125°C

J

Fig. 5 - Forward Power Loss Characteristics

130

120

110

100

90

80

70

60

50

40

0 50 100 150 200 250 300 350 400

Maximum Allow able Heatsink Tem perature (°C)

SD303C ..C Se ries
(Double Side Cooled)
R (DC ) = 0 .08 K/ W

thJ-h s

Conduction Angle

90°

60°

30°

Average Forward Current (A)

Fig. 3 - Current Ratings Characteristics

120°

180°

1000

900

800

700

600

500

400

300

200

100

Maximum Average Forward Power Loss (W)

DC
180°
120°

90°
60°
30°

RMS Lim it

Conduction Period

SD 30 3 C ..C Se ries
T = 1 25°C

J

0

0100200300400500600

Average Forward Current (A)

Fig. 6 - Forward Power Loss Characteristics

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 93174

4 Revision: 04-Aug-08

SD303C..C Series

Fast Recovery Diodes

(Hockey PUK Version), 350 A

5500

At Any Rated Load Condition And W ith

Rated V Applied Following Surge.

5000

4500

4000

3500

3000

2500

SD 30 3C ..C Se ries

Peak Half Sine Wave Forward Current (A)

2000

N u m b e r O f E q ua l Am p litu d e H a lf C ycle C urr ent Pu ls es (N )

Fig. 7 - Maximum Non-Repetitive Surge Current

6000

M a x im um N on Re p et itive S u rg e C urren t

5500

5000

4500

4000

3500

3000

2500

2000

Peak Half Sine Wave Forward C urrent (A)

1500

0.01 0.1 1

Fig. 8 - Maximum Non-Repetitive Surge Current

RRM

Initia l T = 1 2 5°C

J

@ 60 H z 0.0083 s
@ 50 H z 0.0100 s

Single and Double Side Cooled

V e r su s P u ls e T r a i n D u r a t io n .

SD303C..C Series

Pulse Train Duration (s)

Initia l T = 1 25 ° C

N o V o lt a g e R e a p p l ie d
Ra ted V Rea p p lie d

J

RRM

Single and Double Side Cooled

Vishay High Power Products

10000

SD303C ..C Series

1000

100

Insta n tan eo us Fo rw a rd C urre n t (A )

10

001011

0123 45 6 78

Instantaneous Forward Voltage (V)

Fig. 9 - Forward Voltage Drop Characteristics

1

Steady S tate Va lu e

R = 0.16 K/W

thJ-h s

(Sin g le Sid e C oole d)

thJ-h s

R = 0.08 K/W

thJ-h s

0.1
(D oub le Sid e C ooled )

(D C O p e ration )

0.01

0.001

Transient Therm a l Impedan ce Z (K/W )

0.0001 0.001 0.01 0.1 1 10 100

Squa re W a ve Pulse D ur atio n ( s)

Fig. 10 - Thermal Impedance Z

T = 25 °C

J

T = 12 5 ° C

J

SD 30 3 C ..C Se ries

Characteristic

thJ-hs

120

V

100

80

60

40

Forw ard Recovery (V)

20

0

FP

0 200 400 600 800 1000 1200 1400 1600 1800 2000

I

Rate Of f Fall O f Forw ard C urren t d i/dt (A /u sec)

T = 125°C

J

T = 25°C

J

SD 303C ..S20C Se ries

Fig. 11 - Typical Forward Recovery Characteristics

Document Number: 93174 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 04-Aug-08 5

SD303C..C Series

Vishay High Power Products

2.8

SD 303C ..S1 0C Se ries

2.6

2.4

2.2

1.8

Maximum Reverse Recovery Time - Trr (µs)

1.6

Rate Of Fall Of Forward Curre nt - di/dt (A/µs)

Fig. 12 - Recovery Time Characteristics

140

130

120

110

100

90

80

70

60

50

40

30

20

10

Maximum Reverse Recovery Charge - Qrr (µC)

Ra te O f Fa ll Of Fo rwar d Cu rrent - d i/dt (A /µs)

Fig. 13 - Recovery Charge Characteristics

T = 1 25 °C, V = 30V

J

2

SD303C ..S10C Series
T = 125 °C , V = 30V

J

0 20406080100

r

I = 750 A

FM

Squa re Pulse

I = 7 50 A

FM

Sq u a re Pul se

400 A

200 A

r

400 A

200 A

Fast Recovery Diodes

(Hockey PUK Version), 350 A

00101

Rate Of Fall Of Forward C urrent - di/dt (A/µs)

Fig. 15 - Recovery Time Characteristics

Ra te O f Fa ll O f Fo r w a rd C ur r en t - di/ dt (A/ µs )

Fig. 16 - Recovery Charge Characteristics

3.6

3.2

2.8

2.4

M ax im um R eve rse Reco ve ry Time - T rr (µs)

1.6

170

160

150

140

130

120

110

100

90

80

70

60

50

M axim um Reverse Recovery Charge - Qrr (µC)

SD303C ..S15C Series
T = 125 °C, V = 30V

J

I = 75 0 A

FM

Sq ua re P u ls e

2

I = 75 0 A

FM

Sq ua re P u ls e

400 A

200 A

SD303C ..S15C Series
T = 125 °C , V = 30V

J

10 20 30 4 0 50 60 70 80 90 100

r

400 A

200 A

00101

r

100

90

80

70

60

50

40

30

20

M a xim u m Rev erse R e co v ery C u rren t - Irr (A )

20 30 40 5 0 60 70 80 90 10 0

Rate O f Fa ll Of F orwa rd Cur ren t - di/d t (A/µs )

I = 75 0 A

FM

Square Pulse

400 A

200 A

SD 303C..S10C Serie s
T = 1 2 5 °C , V = 3 0 V

J

r

Fig. 14 - Recovery Current Characteristics

130

120

110

100

90

80

70

60

50

40

30

20

10

M a xim u m R ev erse Re co v ery C urre n t - Irr (A )

10 20 30 40 50 60 70 80 90 1 00

Rate Of Fall Of Forward Current - di/d t (A/µs)

I = 7 50 A

FM

Sq ua re P u lse

400 A

200 A

SD 3 03C ..S15 C Se ries
T = 12 5 °C, V = 30V

J

r

Fig. 17 - Recovery Current Characteristics

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 93174

6 Revision: 04-Aug-08

SD303C..C Series

Fast Recovery Diodes

Vishay High Power Products

(Hockey PUK Version), 350 A

3.6

3.4

3.2

3

2.8

2.6

Max imu m Re verse Recovery Time - Trr (µs)

2.4

Rate O f Fa ll O f For wa rd Curr ent - di/d t (A/µs )

SD303C..S20C Series
T = 125 ° C , V = 30V

J

400 A

200 A

r

I = 750 A

FM

Square Pulse

00101

Fig. 18 - Recovery Time Characteristics Fig. 19 - Recovery Charge Characteristics

130

120

110

100

90

80

70

60

50

40

30

20

M a x im um R ev e rse Rec o very C u rren t - Irr (A )

10 20 3 0 40 50 60 70 80 90 100

Rate Of Fall Of Forward Current - di/d t (A/µs)

I = 750 A

FM

Sq uare Pulse

400 A

200 A

SD303C ..S20C Serie s
T = 125 °C , V = 30V

J

r

300

I = 750 A

FM

250

200

150

100

50

10 20 30 4 0 50 60 70 80 90 100

Maximum Reverse Recovery Charge - Qrr (µC )

Rate Of Fall Of Forward Current - di/dt (A/µs)

Sq ua re Pulse

400 A

200 A

SD 3 03C ..S20 C Se ries
T = 1 2 5 ° C , V = 3 0 V

J

r

Fig. 20 - Recovery Current Characteristics

1E4

20 joules per pulse

10

4

2

1

1E3

0.04

0.02

1E2

0.01

Peak Forward Current (A)

tp

1E1

1E1 1E2 1E3 1E4

0.4

0.2

0.1

SD3 03C..S10C S eries
Sinuso ida l Pulse
T = 125°C, V = 1 120 V
dv/dt = 1000V/µs

RRM

J

Pulse Basewidth (µs)

2

1

0.4

0.2

0.1

SD303C ..S10C Series
Tra pe zoid al Pul se
T = 125°C , V = 1120V

tp

dv/dt = 1000V/µs; di/dt=50A/µs

RRM

J

1E1 1E2 1E3 1E4

Pulse Basewidth (µs)

10

4

20 jo u les p er pulse

Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics

Document Number: 93174 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 04-Aug-08 7

SD303C..C Series

Vishay High Power Products

1E4

10

4

2

1

1E3

1E2

Peak Forw ard Current (A)

1E1

1E1 1E2 1E 3 1E4

SD303C..S15C Series
Sinuso idal Pulse
T = 12 5°C, V = 1760 V

tp

dv/dt = 1000V/µs

1E4

1E3

1E2

Peak Forw ard C urrent (A)

1E1

1E1 1E2 1E3 1E4

0.04

SD303C..S20C Series
Sinuso ida l Pulse
T = 125°C, V = 1760V

tp

dv/dt = 1000V/µs

0.4

0.2

0.1

0.04

0.02

RRM

J

Pulse Basew idth (µs)

Fig. 22 - Maximum Total Energy Loss Per Pulse Characteristics

2

1

0.4

0.2

0.1

J

RRM

Pulse Basew id th (µ s)

10

4

Fast Recovery Diodes

(Hockey PUK Version), 350 A

20 jo ules p er pu lse

1E1 1E2 1E3 1E4

20 joules per pulse

1E1 1 E2 1E3 1E4

0.2

SD303C..S15C Series
Trapezoidal Pulse
T = 125°C, V = 1760V

J

tp

dv/dt = 1000V/µs; di/dt=50A/µs

Pulse Basewidth (µs)

0.2

SD303C..S20C Series
Trapezoidal Pulse
T = 125°C, V = 1760V

J

tp

dv/dt = 1000V/µs; di/dt=50A/µs

Pulse Basewidth (µs)

RRM

RRM

0.4

0.4

20 jo ules per p ulse

10

4

2

1

20 jo ul es per p ulse

10

4

2

1

Fig. 23 - Maximum Total Energy Loss Per Pulse Characteristics

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 93174

8 Revision: 04-Aug-08

SD303C..C Series

(Hockey PUK Version), 350 A

ORDERING INFORMATION TABLE

Device code

SD 30 3 C 25 S20 C

1 - Diode

2 - Essential part number

3 - 3 = Fast recovery

4 - C = Ceramic PUK

5 - Voltage code x 100 = V

6 -t

7 - C = PUK case DO-200AA

Fast Recovery Diodes

51324

RRM

code (see Recovery Characteristics table)

rr

Vishay High Power Products

67

(see Voltage Ratings table)

Document Number: 93174 For technical questions, contact: [e-mail]
Revision: 04-Aug-08 9

www.vishay.com

DIMENSIONS in millimeters (inches)

3.5 (0.14) ± 0.1 (0.004) DIA. NOM. x

1.8 (0.07) deep MIN. both ends

Outline Dimensions

Vishay High Power Products

DO-200AA

42 (1.65) DIA. MAX.

19 (0.75) DIA. MAX.

2 places

38 (1.50) DIA. MAX.

Quote between upper and lower pole pieces has to be considered after

application of mounting force (see Thermal and Mechanical Specifications)

0.3 (0.01) MIN.
both ends

14.4 (0.57)

13.7 (0.54)

Document Number: 95248 For technical questions concerning discrete products, contact: [e-mail]
Revision: 06-Nov-07 For technical questions concerning module products, contact: [e-mail]

www.vishay.com

1

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

®

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1