Vishay SD200N Series, SD200R Series Data Sheet

DO-205AC (DO-30)

PRODUCT SUMMARY

I

F(AV)

Vishay High Power Products

Standard Recovery Diodes

(Stud Version), 200 A

FEATURES

• Wide current range

• High voltage ratings up to 2400 V

• High surge current capabilities

• Stud cathode and stud anode version

• Standard JEDEC types

• Compression bonded encapsulations

•RoHS complaint

• Lead (Pb)-free

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• Converters

200 A

• Power supplies

• Machine tool controls

• High power drives

• Medium traction applications

SD200N/R Series

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS

I

F(AV)

I

F(RMS)

I

FSM

2

I

t

V

RRM

T

J

T

C

50 Hz 4700

60 Hz 4920

50 Hz 110

60 Hz 101

Range 1600 to 2000 2400 V

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

, MAXIMUM REPETITIVE

TYPE NUMBER

SD200N/R

VOLTAGE

CODE

16 1600 1700

24 2400 2500

RRM

PEAK REVERSE VOLTAGE

V

SD200N/R

1600 to 2000 2400

200 A

110 °C

314

- 40 to 180 150 °C

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

RRM

= TJ MAXIMUM

AT T

J

UNITS

A

kA2s

MAXIMUM

mA

1520 2000 2100

SD200N/R Series

Vishay High Power Products

Standard Recovery Diodes

(Stud Version), 200 A

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current
at case temperature

Maximum average forward current
at case temperature

Maximum RMS forward current I

Maximum peak, one-cycle forward,
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1100 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of forward
slope resistance

High level value of forward
slope resistance

Maximum forward voltage drop V

I

F(AV)

F(RMS)

I

FSM

F(TO)1

F(TO)2

r

f1

r

f2

FM

180° conduction, half sine wave

DC at 95 °C case temperature 314

t = 10 ms

t = 8.3 ms 4920

t = 10 ms

t = 8.3 ms 4140

t = 10 ms

t = 8.3 ms 101

t = 10 ms

t = 8.3 ms 71

(16.7 % x π x I

= TJ maximum

T

J

(I > π x I
(16.7 % x π x I

= TJ maximum

T

J

(I > π x I

No voltage
reapplied

100 % V

RRM

reapplied

No voltage

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

F(AV)

), TJ = TJ maximum 1.00

F(AV)

< I < π x I

F(AV)

), TJ = TJ maximum 0.64

F(AV)

F(AV)

F(AV)

),

),

Ipk = 630 A, TJ = TJ maximum,

= 10 ms sinusoidal wave

t

p

200 A

110 °C

220 A

100 °C

4700

3950

110

78

0.90

0.79

1.40 V

kA

mΩ

A

2

s

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS

Maximum junction operating
temperature range

Maximum storage temperature range T

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
case to heatsink

Maximum allowed
mounting torque ± 10 %

T

J

Stg

R

thJC

R

thCS

DC operation 0.23

Mounting surface, smooth, flat and greased 0.08

Not-lubricated threads 14 Nm

Approximate weight 120 g

Case style See dimensions (link at the end of datasheet) DO-205AC (DO-30)

SD200N/R

1600 to 2000 2400

- 40 to 180 - 40 to 150

- 55 to 200

UNITS

K/W

°C

SD200N/R Series

Standard Recovery Diodes

Vishay High Power Products

(Stud Version), 200 A

ΔR

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

Note

• The table above shows the increment of thermal resistance R

CONDUCTION

thJC

180° 0.041 0.030

120° 0.049 0.051

90° 0.063 0.068

60° 0.093 0.096

30° 0.156 0.157

when devices operate at different conduction angles than DC

thJC

180

170

160

150

140

130

120

110

100

Maximum Allowable Case Temperature (°C)

04080120160200240

Average Forward Current (A)

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

SD 20 0N / R Se r i e s
R (DC) = 0.23 K/W

thJC

Cond uction Angle

90°

60°

30°

120°

180°

T

= TJ maximum K/W

J

180

170

160

150

140

130

120

110

100

90

Maximum Allowable Case Temperature (°C)

0 50 100150200250300350

Average Forward Current (A)

SD 2 0 0 N / R Se r i e s
R (DC) = 0.23 K/ W

thJC

90°

60°

30°

120°

Conduc tion Period

180°

DC

300

250

180°
120°

90°
60°

200

30°

RMS Limit

150

Conduction Angle

100

50

SD200N/R Series
Tj = Tj max

0

Maximum Average Forward Power Loss (W)

0 50 100 150 200 25

Average Forward Current (A)

Fig. 3 - Forward Power Loss Characteristics

RthSA = 0.08 K/W - Delta R

0.12 K/W

0.2 K/W

0.3 K/W

0.4 K/W

0.6 K/W

0.8 K/W

1.4 K/W

1.8 K/W

40 60 80 100 120 140 160 180

0

Maximum Allowable Ambient Temperature (°C)

SD200N/R Series

Vishay High Power Products

4500

At Any Rated Load Condition And With

4000

3500

3000

2500

2000

1500

SD200N/R Series

400

350

300

250

200

150

100

50

0

Maximum Average Forward Power Loss (W)

Rated Vrrm Applied Following Surge.

DC
180°
120°

90°

60°

30°

RMS Limit

0 50 100 150 200 250 300 35

Average Forward Current (A)

Initial Tj = Tj max

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

Standard Recovery Diodes

(Stud Version), 200 A

RthSA = 0.08 K/W - Delta R

0.12 K/W

0.2 K/W

0.3 K/W

0.4 K/W

0.6 K/W

Conduction Period

SD200N/R Series
Tj = Tj max

Fig. 4 - Forward Power Loss Characteristics

0.8 K/W

1.4 K/W

1.8 K/W

40 60 80 100 120 140 160 180

0

Maximum Allowable Ambient Temperature (°C)

5000

4500

4000

3500

3000

2500

2000

1500

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration.

Initial Tj = Tj max

No Voltage Reapplied

Rated Vrrm Reapplied

SD200N/R Series

1000

Peak Half Sine Wave Forward Current (A)

11010

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

10000

1000

Instantaneous Forward Current (A)

100

0.5 1 1.5 2 2.5 3 3.5

Fig. 7 - Forward Voltage Drop Characteristics

1000

0

Peak Half Sine Wave Forward Current (A)

SD200N/R Series

Tj = 25 °C

Tj = Tj max

Instantaneous Forward Voltage (V)

0.01 0.1 1

Pulse Train Duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current

SD200N/R Series

Standard Recovery Diodes

1

thJC

Transient Thermal Impedance Z (K/W)

0.01

ORDERING INFORMATION TABLE

St e a d y St a t e V a l u e :
R = 0. 23 K/ W

thJC

(DC Operation)

0.1

0.001 0.01 0.1 1 10

Fig. 8 - Thermal Impedance Z

(Stud Version), 200 A

SD 20 0N / R Se r ie s

Square Wave Pulse Duration (s)

Characteristic

thJC

Vishay High Power Products

Device code

SD 20 0 N 24 P C

51324

1 - Diode

2 - Essential part number

3 - 0 = Standard recovery

4 - N = Stud normal polarity (cathode to stud)

R = Stud reverse polarity (anode to stud)

5 - Voltage code x 100 = V

RRM

6 - P = Stud base DO-205AC (DO-30) 1/2" 20UNF-2A

M = Stud base DO-205AC (DO-30) M12 x 1.75

7

- C = Ceramic housing

V= Glass-metal seal

For metric device M12 x 1.75 contact factory

67

(see Voltage Ratings table)

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay High Power Products

DO-205AC (DO-30)

Ceramic housing

157 (6.18)
170 (6.69)

55 (2.16)

MIN.

6.5 (0.26) MIN.

DIA. 8.5 (0.33) NOM.

DIA. 22.5

(0.88) MAX.

21 (0.82)

MAX.

12.5 (0.49)
MAX.

16.5 (0.65)
MAX.

35 (1.38)

MAX.

C.S. 16 mm

(0.015 s.i.)

2.6 (0.10)
MAX.

2

SW 27

1/2"-20UNF-2A*

*For metric device: M12 x 1.75

contact factory

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All product specifications and data are subject to change without notice.

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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

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therein, which apply to these products.

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