Vishay SD200N Series, SD200R Series Data Sheet

DO-205AC (DO-30)

PRODUCT SUMMARY

I

F(AV)

Vishay High Power Products

Standard Recovery Diodes

(Stud Version), 200 A

FEATURES

• Wide current range

• High voltage ratings up to 2400 V

• High surge current capabilities

• Stud cathode and stud anode version

• Standard JEDEC types

• Compression bonded encapsulations

•RoHS complaint

• Lead (Pb)-free

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• Converters

200 A

• Power supplies

• Machine tool controls

• High power drives

• Medium traction applications

SD200N/R Series

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS

I

F(AV)

I

F(RMS)

I

FSM

2

I

t

V

RRM

T

J

T

C

50 Hz 4700

60 Hz 4920

50 Hz 110

60 Hz 101

Range 1600 to 2000 2400 V

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

, MAXIMUM REPETITIVE

TYPE NUMBER

SD200N/R

VOLTAGE

CODE

16 1600 1700

24 2400 2500

RRM

PEAK REVERSE VOLTAGE

V

SD200N/R

1600 to 2000 2400

200 A

110 °C

314

- 40 to 180 150 °C

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

RRM

= TJ MAXIMUM

AT T

J

UNITS

A

kA2s

MAXIMUM

mA

1520 2000 2100

SD200N/R Series

Vishay High Power Products

Standard Recovery Diodes

(Stud Version), 200 A

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current at case temperature

Maximum RMS forward current I

Maximum peak, one-cycle forward, non-repetitive surge current

Maximum I

2

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1100 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of forward slope resistance

High level value of forward slope resistance

Maximum forward voltage drop V

I

F(AV)

F(RMS)

I

FSM

F(TO)1

F(TO)2

r

f1

r

f2

FM

180° conduction, half sine wave

DC at 95 °C case temperature 314

t = 10 ms

t = 8.3 ms 4920

t = 10 ms

t = 8.3 ms 4140

t = 10 ms

t = 8.3 ms 101

t = 10 ms

t = 8.3 ms 71

(16.7 % x π x I

= TJ maximum

T

J

(I > π x I (16.7 % x π x I

= TJ maximum

T

J

(I > π x I

No voltage reapplied

100 % V

RRM

reapplied

No voltage

Sinusoidal half wave, initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

F(AV)

), TJ = TJ maximum 1.00

F(AV)

< I < π x I

F(AV)

), TJ = TJ maximum 0.64

F(AV)

),

Ipk = 630 A, TJ = TJ maximum,

= 10 ms sinusoidal wave

t

p

200 A

110 °C

220 A

100 °C

4700

3950

110

78

0.90

0.79

1.40 V

kA

mΩ

A

2

s

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS

Maximum junction operating temperature range

Maximum storage temperature range T

Maximum thermal resistance, junction to case

Maximum thermal resistance, case to heatsink

Maximum allowed mounting torque ± 10 %

T

J

Stg

R

thJC

R

thCS

DC operation 0.23

Mounting surface, smooth, flat and greased 0.08

Not-lubricated threads 14 Nm

Approximate weight 120 g

Case style See dimensions (link at the end of datasheet) DO-205AC (DO-30)

SD200N/R

1600 to 2000 2400

- 40 to 180 - 40 to 150

- 55 to 200

UNITS

K/W

°C

SD200N/R Series

Standard Recovery Diodes

Vishay High Power Products

(Stud Version), 200 A

ΔR

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

Note

• The table above shows the increment of thermal resistance R

CONDUCTION

thJC

180° 0.041 0.030

120° 0.049 0.051

90° 0.063 0.068

60° 0.093 0.096

30° 0.156 0.157

when devices operate at different conduction angles than DC

thJC

180

170

160

150

140

130

120

110

100

Maximum Allowable Case Temperature (°C)

04080120160200240

Average Forward Current (A)

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

SD 20 0N / R Se r i e s R (DC) = 0.23 K/W

thJC

Cond uction Angle

90°

60°

30°

120°

180°

T

= TJ maximum K/W

J

180

170

160

150

140

130

120

110

100

90

Maximum Allowable Case Temperature (°C)

0 50 100150200250300350

Average Forward Current (A)

SD 2 0 0 N / R Se r i e s R (DC) = 0.23 K/ W

thJC

90°

60°

30°

120°

Conduc tion Period

180°

DC

300

250

180° 120°

90° 60°

200

30°

RMS Limit

150

Conduction Angle

100

50

SD200N/R Series Tj = Tj max

0

Maximum Average Forward Power Loss (W)

0 50 100 150 200 25

Average Forward Current (A)

Fig. 3 - Forward Power Loss Characteristics

RthSA = 0.08 K/W - Delta R

0.12 K/W

0.2 K/W

0.3 K/W

0.4 K/W

0.6 K/W

0.8 K/W

1.4 K/W

1.8 K/W

40 60 80 100 120 140 160 180

0

Maximum Allowable Ambient Temperature (°C)