SD103AWS-V/103BWS-V/103CWS-V
Small Signal Schottky Diodes
Features
• The SD103 series is a metal-on-silicon
Schottky barrier device which is protected
by a PN junction guard ring
•
This diode is also available in the
Mini-MELF case with the type designations LL103A
to LL103C, DO35 case with the type designations
SD103A to SD103C and SOD123 case with type
designations SD103AW-V to SD103CW-V
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching
and low logic level applications
• For general purpose applications
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
e3
Vishay Semiconductors
20145
Mechanical Data
Case: SOD323 Plastic case
Weight: approx. 4.3 mg
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Par t Ordering code Type Marking Remarks
SD103AWS-V SD103AWS-V-GS18 or SD103AWS-V-GS08 S6 Tape and Reel
SD103BWS-V SD103BWS-V-GS18 or SD103BWS-V-GS08 S7 Tape and Reel
SD103CWS-V SD103CWS-V-GS18 or SD103CWS-V-GS08 S8 Tape and Reel
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Part Symbol Val ue Unit
Peak reverse voltage
Power dissipation
Single cycle surge 10 µs square wave
1)
Valid provided that electrodes are kept at ambient temperature
SD103AWS-V
SD103BWS-V
SD103CWS-V
V
V
V
RRM
RRM
RRM
P
I
FSM
40 V
30 V
20 V
1)
tot
200
2A
mW
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Valu e Unit
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
1)
Valid provided that electrodes are kept at ambient temperature
R
thJA
T
j
T
stg
1)
500
1)
125
- 55 to + 150
K/W
°C
1)
°C
Document Number 85682
Rev. 1.7, 18-Sep-06
www.vishay.com
1
SD103AWS-V/103BWS-V/103CWS-V
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Par t Symbol Min Ty p. Max Unit
Leakage current V
V
V
Forward voltage drop I
Diode capacitance
Reverse recovery time I
F
I
F
V
F
recover to 0.1 I
Typical Characteristics
T
= 25 °C unless otherwise specified
amb
= 30 V
R
= 20 V
R
= 10 V
R
SD103AWS-V
SD103BWS-V
SD103CWS-V
= 20 mA V
= 200 mA V
= 0 V, f = 1 MHz C
R
= IR = 50 mA to 200 mA,
R
I
R
I
R
I
R
F
F
D
t
rr
5µA
5µA
5µA
370 mV
600 mV
50 pF
10 ns
1000
100
10
1
F
0.1
I - Forward Current (mA)
0.01
0 0.4 0.6 0.8 1.00.2
18488
VF- Forward Voltage (V)
Figure 1. Typical Variation of Forward Current vs. Forward Voltage
5
= 300 ms
t
p
4
duty cycle = 2 %
3
2
1000
= 125 °C
T
amb
100
10
1
- Reverse Current (µA)
0.1
R
I
0.01
0 5 10 15 20 25 30 35 40 45 50
20084
V - Reverse Voltage (V)
R
100 °C
75 °C
50 °C
25 °C
Figure 3. Typical Variation of Reverse Current at Various
Temperatures
100
10
F
1
I - Forward Current (A)
0
18489
0.5 1.00 1.5
VF- Forward Voltage (V)
Figure 2. Typical High Current Forward Conduction Curve
www.vishay.com
2
D
C- Diode Capacitance (pF)
1
10 20 30 40 050
18491
V R - Reverse Voltag e (V)
Figure 4. Diode Capacitance vs. Reverse Voltage
Document Number 85682
Rev. 1.7, 18-Sep-06
SD103AWS-V/103BWS-V/103CWS-V
Vishay Semiconductors
50
40
30
= 400 mAI
F
20
- Reverse Voltage (V)
R
10
V
0
T
18492
Figure 5. Blocking Voltage Deration vs. Temperature at Various
- Ambient Temperature (°C)
amb
Average Forward Currents
100 mA
200 mA
100 2000
Package Dimensions in mm (Inches): SOD323
0.8 (0.031)
1.15 (0.045)
0.10 (0.004)
0.15 (0.006)
0.25 (0.010) min
0.1 (0.004) max
cathode bar
2.85 (0.112)
0.20 (0.008)
0.40 (0.016)
Document no.: S8-V-3910.02-001 (4)
Rev. 03 - Date: 08.November 2004
17443
2.50 (0.098)
1.95 (0.077)
1.60 (0.063)
1.1 (0.043)
1.5 (0.059)
foot print recommendation:
0.6 (0.024)
1.6 (0.063)
0.6 (0.024)
0.6 (0.024)
Document Number 85682
Rev. 1.7, 18-Sep-06
www.vishay.com
3
SD103AWS-V/103BWS-V/103CWS-V
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
4
Document Number 85682
Rev. 1.7, 18-Sep-06
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
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