S592T/S592TR/S592TRW
Vishay Telefunken
www.vishay.de • FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
1 (6)
Document Number 85046
MOSMIC for TV–Tuner Prestage with 5 V Supply
Voltage
MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device.
Observe precautions for handling.
Applications
Low noise gain controlled input stages in UHF-and
VHF- tuner with 5 V supply voltage.
G2
G1
RF in
AGC
S
D
V
DD
C block
RFC
RF out
94 9296
C block
C block
Features
D
Integrated gate protection diodes
D
Low noise figure
D
20mS forward transadmittance
D
Biasing network on chip
D
Improved cross modulation at gain reduction
D
High AGC-range
D
SMD package
13 579
21
43
94 9279
S592T Marking: 592
Plastic case (SOT 143)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
95 10831
21
43
94 9278
S592TR Marking: 29R
Plastic case (SOT 143R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
2
1
34
13 56613 654
S592TRW Marking: W5L
Plastic case (SOT 343R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
S592T/S592TR/S592TRW
Vishay Telefunken
www.vishay.de • FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
2 (6)
Document Number 85046
Absolute Maximum Ratings
T
amb
= 25_C, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Drain - source voltage V
DS
8 V
Drain current I
D
20 mA
Gate 1/Gate 2 - source peak current ±I
G1/G2SM
10 mA
Gate 1/Gate 2 - source Voltage ±V
G1/G2SM
6 V
Total power dissipation T
amb
≤ 78 °C P
tot
160 mW
Channel temperature T
Ch
150
°
C
Storage temperature range T
stg
–55 to +150
°
C
Maximum Thermal Resistance
T
amb
= 25_C, unless otherwise specified
Parameter T est Conditions Symbol Value Unit
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35mm Cu
R
thChA
450 K/W
Electrical DC Characteristics
T
amb
= 25_C, unless otherwise specified
Parameter Test Conditions Symbol Min Typ Max Unit
Gate 1 - source
breakdown voltage
±I
G1S
= 10 mA, V
G2S
= VDS = 0 ±V
(BR)G1SS
7 10 V
Gate 2 - source
breakdown voltage
±I
G2S
= 10 mA, V
G1S
= VDS = 0 ±V
(BR)G2SS
7 10 V
Gate 1 - source +V
G1S
= 5 V, V
G2S
= VDS = 0 +I
G1SS
50
m
A
leakage current
–V
G1S
= 5 V, V
G2S
= VDS = 0 –I
G1SS
100mA
Gate 2 - source
leakage current
±V
G2S
= 5 V, V
G1S
= VDS = 0 ±I
G2SS
20 nA
Drain current VDS = 5 V, V
G1S
= 0, V
G2S
= 4 V I
DSS
50 500mA
Self-biased
operating current
VDS = 5 V, V
G1S
= nc, V
G2S
= 4 V I
DSP
7 10 14 mA
Gate 2 - source
cut-off voltage
VDS = 5 V, V
G1S
= nc, ID = 20 mA V
G2S(OFF)
1.0 V
Caution for Gate 1 switch-off mode:
No external DC-voltage on Gate 1 in active mode!
Switch-off at Gate 1 with V
G1S
< 0.7 V is feasible.
Using open collector switching transistor (inside of PLL), insert 10 kW collector resistor.
S592T/S592TR/S592TRW
Vishay Telefunken
www.vishay.de • FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
3 (6)
Document Number 85046
Electrical AC Characteristics
VDS = 5 V, V
G2S
= 4 V, f = 1 MHz , T
amb
= 25_C, unless otherwise specified
Parameter Test Conditions Symbol Min Typ Max Unit
Forward transadmittance y
21s
17 20 23 mS
Gate 1 input capacitance C
issg1
2.0 2.5 pF
Feedback capacitance C
rss
20 fF
Output capacitance C
oss
0.9 pF
Power gain GS = 2 mS, GL = 0.5 mS, f = 200 MHz G
ps
26 dB
g
GS = 3,3 mS, GL = 1 mS, f = 800 MHz G
ps
16.5 20 dB
AGC range VDS = 5 V, V
G2S
= 1 to 4 V, f = 800 MHz
D
G
ps
40 dB
Noise figure GS = 2 mS, GL = 0.5 mS, f = 200 MHz F 1 dB
g
GS = 3,3 mS, GL = 1 mS, f = 800 MHz F 1.6 2.5 dB
S592T/S592TR/S592TRW
Vishay Telefunken
www.vishay.de • FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
4 (6)
Document Number 85046
Dimensions of S592T in mm
96 12240
Dimensions of S592TR in mm
96 12239
S592T/S592TR/S592TRW
Vishay Telefunken
www.vishay.de • FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
5 (6)
Document Number 85046
Dimensions of S592TRW in mm
96 12238
S592T/S592TR/S592TRW
Vishay Telefunken
www.vishay.de • FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
6 (6)
Document Number 85046
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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