VISHAY S420D Datasheet
Vishay Telefunken
Silicon Mesa SMD Rectifier
Features
D
Soft recovery characteristics
D
Glass passivated junction
D
Low reverse current
D
Delivery on 12mm tape
Applications
Fast rectifier
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage V
Peak forward surge current tp=10ms, half–sinewave I
Average forward current T
Junction and storage temperature range Tj=T
= 25°C,
amb
TL = constant
FSM
I
FAV
15 811
R
–55...+150°C
stg
S420D
400 V
20 A
1.5 A
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction lead TL = constant R
Junction ambient Epoxy glass hard issue,
35mm*17mm2 copper area per electrode
Epoxy glass hard issue,
35mm*50mm
2
copper area per electrode
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=1A V
Reverse current VR=400V I
VR=400V, Tj=100°C I
Reverse recovery time IF=0.5A, IR=1A, iR=0.25A t
thJL
R
thJA
R
thJA
F
R
R
rr
25 K/W
150 K/W
125 K/W
2 V
5
m
20
25 ns
m
A
A
Document Number 86057
Rev. 2, 24-Jun-98
www.vishay.de • FaxBack +1-408-970-5600
1 (4)
S420D
Vishay Telefunken
Characteristics (Tj = 25_C unless otherwise specified)
1000
10
Tj=150°C
1000
VR = V
RRM
1
Tj=25°C
0.1
0.01
F
I – Forward Current ( A )
0.001
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VF – Forward Voltage ( V )15955
Figure 1. Forward Current vs. Forward Voltage
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
R
FAV
I – Average Forward Current ( A )
0.1
0
0 20 40 60 80 100 120 140
=125K/W
thJA
PCB: d=25mm
T
– Ambient Temperature ( °C )15956
amb
VR=V
half sinewave
R
=25K/W
thJA
l=10mm
RRM
m
100
100
10
10
R
I – Reverse Current ( A )
1
1
25 50 75 100 125 150
25 50 75 100 125 150
Tj – Junction Temperature ( °C )15958
Figure 3. Reverse Current vs. Junction Temperature
Figure 2. Average Forward Current vs.
Ambient Temperature
www.vishay.de • FaxBack +1-408-970-5600
2 (4)
Document Number 86057
Rev. 2, 24-Jun-98
Loading...