VISHAY S07B Technical data

S07B / 07D / 07G / 07J / 07M

Vishay Semiconductors

Small Signal Fast Switching Diode, High Voltage

Features

• For surface mounted applications

• Low profile package

• Ideal for automated placement

• Glass passivated

• High temperature soldering:
260 °C/ 10 seconds at terminals

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

Mechanical Data

Case: JEDEC DO-219AB (SMF®) Plastic case
Polarity: Band denotes cathode end
Weight: approx. 15 mg
Packaging codes-options:

GS18 / 10 k per 13" reel (8 mm tape), 50 k/box
GS08 / 3 k per 7" reel (8 mm tape), 30 k/box

e3

17249

Parts Table

Par t Ordering code Marking Remarks

S07B S07B-GS18 or S07B-GS08 SB Tape and Reel

S07D S07D-GS18 or S07D-GS08 SD Tape and Reel

S07G S07G-GS18 or S07G-GS08 SG Tape and Reel

S07J S07J-GS18 or S07J-GS08 SJ Tape and Reel

S07M S07M-GS18 or S07M-GS08 SM Tape and Reel

Document Number 85733

Rev. 1.8, 13-Apr-05

www.vishay.com

1

S07B / 07D / 07G / 07J / 07M

Vishay Semiconductors

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Para me ter Test condition Part Symbol Val ue Unit

Maximum repetitive peak reverse voltage S07B V

S07D V

S07G V

S07J V

S07M V

Maximum RMS voltage S07B V

S07D V

S07G V

S07J V

S07M V

Maximum DC blocking voltage S07B V

S07D V

S07G V

S07J V

S07M V

Maximum average forward rectified current

Peak forward surge current 8.3 ms single
half sine-wave

1)

Averaged over any 20 ms period

T

tp

T

= 65 °C

A

= 25 °C I

T

L

= 75 °C

1)

1)

RRM

RRM

RRM

RRM

RRM

RMS

RMS

RMS

RMS

RMS

I

F(AV)

I

F(AV)

FSM

DC

DC

DC

DC

DC

100 V

200 V

400 V

600 V

1000 V

70 V

140 V

280 V

420 V

700 V

100 V

200 V

400 V

600 V

1000 V

1.5 A

0.7 A

25 A

Thermal Characteristics

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Valu e Unit

Thermal resistance junction to

ambient air

2)

Operating junction and storage
temperature range

2)

Mounted on epoxy substrate with 3 x 3 mm CU pads (≥ 40 µm thick)

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Min Ty p. Max Unit

Maximum instantaneous
forward voltage

Maximum DC reverse current at
rated DC blocking voltage

Reverse recovery time I

Typical capacitance at 4 V, MHz C

3)

Pulse test: 300 µ pulse width, 1 % duty cycle

3)

1.0 A

= 25 °C I

T

A

= 125 °C I

T

A

= 0.5 A, IR = 1.0 A, Irr = 0.25 A t

F

R

thJA

, T

T

J

STG

V

F

R

R

rr

j

180 K/W

- 55 to + 150 °C

1.1 V

10 µA

50 µA

1.8 µs

4pF

www.vishay.com

2

Document Number 85733

Rev. 1.8, 13-Apr-05

S07B / 07D / 07G / 07J / 07M

Vishay Semiconductors

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

1.2

Resistive or Inductive Load

1.0

0.8

0.6

0.4

0.2

Average Forward Current (A)

17375

3.0 x 3.0mm 40 µm

Thick Copper Pad Areas

0

0 20 40 60 80 100 120 140 160

Ambient Temperature (jC)

Figure 1. Forward Current Derating Curve

1000

17376

TJ= 150°C

Instantaneous Forward Current (mA)

100

600 700 800 900 1000 1100

Instantaneous Forward Voltage (mV)

TJ=25°C

TJ= 100°C

Figure 2. Typical Instantaneous Forward Characteristics

100

TJ= 150°C

17377

10

1

0.1

Instantaneous Reverse Current (µA)

0.01
0 100 200 300 400 500 600 700 800 900

Instantaneous Reverse Voltage (V)

TJ= 125°C

TJ= 100°C

TJ=75°C

TJ=50°C

TJ=25°C

Figure 3. Typical Instantaneous Reverse Characteristics

10

9

8

7

6

5

C (pF)

4

3

2

1

0

0 5 10 15 20 25 30 35 40

17378

VR(V)

Figure 4. Capacitance vs. Reverse Voltage

Document Number 85733

Rev. 1.8, 13-Apr-05

www.vishay.com

3