RGP02-12E THRU RGP02-20E
Vishay Semiconductors
formerly General Semiconductor
Document Number 88699 www.vishay.com
16-Jan-03 1
Glass Passivated Junction
Fast Switching Rectifier
Reverse V olta ge 1200 to 2000V
Forward Current 0.5A
Patented*
0.107 (2.7)
0.080 (2.0)
DIA.
1.0 (25.4)
MIN.
1.0 (25.4)
MIN.
0.205 (5.2)
0.160 (4.1)
DIA.
0.026 (0.66)
0.023 (0.58)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
RGP02 RGP02 RGP02 RGP02 RGP02
Parameter Symbols -12E -14E -16E -18E -20E Units
Maximum repetitive peak reverse voltage V
RRM
1200 1400 1600 1800 2000 V
Maximum RMS voltage V
RMS
840 980 1120 1260 1400 V
Maximum DC blocking voltage V
DC
1200 1400 1600 1800 2000 V
Maximum average forward rectified current
0.375" (9.5mm) lead length at TA=55°C
I
F(AV)
0.5 A
Peak forward surge current
8.3ms single half sine-wave superimposed I
FSM
20 A
on rated load (JEDEC Method)
Typical ther mal resistance
(1)
R
ΘJA
65
°C/W
R
ΘJL
30
Operating junction and storage temperature range T
J, TSTG
-65 to +175 °C
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Maximum instantaneous forward voltage at 0.1A V
F
1.8 V
Maximum DC reverse current T
A
=25°C 5.0
at rated DC blocking voltage TA=125°C
I
R
50
µA
Maximum reverse recovery time at t
rr
300 ns
IF=0.5A, IR=1.0A, Irr=0.25A
Typical junction capacitance at 4.0V, 1MHz C
J
5.0 pF
Note:
(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5mm) lead length, P.C.B. mounted
Case Style GP10E
Mechanical Data
Case: Molded plastic over glass body
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.012 oz., 0.3 g
Dimensions in inches and (millimeters)
*Glass-plastic encapsulation technique is covered by
Patent No.3,996,602, and brazed-lead assembly by Patent No.3,930,306
Features
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• High temperature metallurgically bonded construction
• Capable of meeting environmental standards of
MIL-S-19500
• For use in high frequency rectifier circuits
• Fast switching for high efficiency
• Cavity-free glass passivated junction
• 0.5 Ampere operation at T
A
=55°C with no thermal
runaway
• Typical I
R
less than 0.2µA
• High temperature soldering guaranteed:
350°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
RGP02-12E THRU RGP02-20E
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com Document Number 88699
2 16-Jan-03
Ambient Temperature (°C)
Fig. 1 — Forward Current
Derating Curve
Average Forward Rectified Current (A)
Fig. 3 — Typical Instantaneous
Forward Characteristics
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
Fig. 4 — Typical Reverse
Characteristics
Number of Cycles at 60 H
Z
Fig. 2 — Maximum Non-Repetitive
Peak Forward Surge Current
Peak Forward Surge Current (A)
Reverse Voltage (V)
Junction Capacitance (pF)
Fig. 5 — Typical Junction
Capacitance
25
50
75
100
125
150
175
0
0.1
0.2
0.3
0.4
0.5
Resistive or Inductive Load
0.375" (9.5mm) Lead Length
1
10
100
0
5
10
15
20
25
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
0.8
1.0
1.2
1.4
1.6
1.8
2
2.2
2.4
0.001
0.01
0.1
1
0
20
40
60
80
100
0.01
0.1
1
10
20
TJ = 125°C
TJ = 75°C
TJ = 25°C
1
10
100
1
10
TJ = 25°C
f = 1.0 MH
Z
Vsig = 50mVp-p
TJ = 25°C
Pulse Width = 300µs
1% Duty Cycle
Ratings and
Characteristic Curves(T
A
= 25°C unless otherwise noted)