Vishay SST4117, SST4118, SST4119, 2N4117A, 2N4118A Schematics

2N/PN/SST4117A Series

Vishay Siliconix

N-Channel JFETs

2N4117A PN4117A SST4117
2N4118A PN4118A SST4118
2N4119A PN4119A SST4119

PRODUCT SUMMARY

Part Number V

4117 −0.6 to −1.8 −40 70 30

4118 −1 to −3 −40 80 80

4119 −2 to −6 −40 100 200

FEATURES BENEFITS APPLICATIONS

D Ultra-Low Leakage: 0.2 pA
D Very Low Current/Voltage Operation
D Ultrahigh Input Impedance
D Low Noise

GS(off)

(V) V

(BR)GSS

Min (V) gfs Min (mS)

I

DSS

Min (mA)

D Insignificant Signal Loss/Error Voltage

with High-Impedance Source

D Low Power Consumption (Battery)
D Maximum Signal Output, Low Noise
D High Sensitivity to Low-Level Signals

D High-Impedance Transducer

Amplifiers

D Smoke Detector Input
D Infrared Detector Amplifier
D Precision Test Equipment

DESCRIPTION

The 2N/PN/SST4117A series of n-channel JFETs provide
ultra-high input impedance. These devices are specified with
a 1-pA limit and typically operate at 0.2 pA. This makes them
perfect choices for use as high-impedance sensitive front-end
amplifiers.

TO-206AF

(TO-72)

S

1

23

D

Top View
2N4117A
2N4118A
2N4119A

C

4

G

D

S

G

TO-226AA

(TO-92)

1

2

3

Top View
PN4117A
PN4118A
PN4119A

The hermetically sealed TO-206AF package allows full
military processing per MIL-S-19500 (see Military
Information). The TO-226A (TO-92) plastic package provides
a low-cost option. The TO-236 (SOT-23) package provides
surface-mount capability. Both the PN and SST series are
available in tape-and-reel for automated assembly (see
Packaging Information).

TO-236

(SOT-23)

1

D

G

3

S

2

Top View
SST4117 (T7)*
SST4118 (T8)*
SST4119 (T9)*

*Marking Code for TO-236

For applications information see AN105.

Document Number: 70239
S-41231—Rev. G, 28-Jun-04

www.vishay.com

1

2N/PN/SST4117A Series

V

VGS = −10 V

S

VDS = 10 V, VGS = 0 V

Common-Source

Common-Source

f = 1 MHz

Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS

Gate-Source/Gate-Drain Voltage −40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Forward Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead Temperature (

Power Dissipation (case 25_C) :

Storage Temperature : (2N Prefix) −65 to 175_C. . . . . . . . . . . . . . . . . . .

(PN, SST Prefix) −55 to 150_C. . . . . . . . . . . . .

Operating Junction Temperature :

(2N Prefix) −55 to 175_C. . . . . . . . . . . . . . . . . . .

(PN, SST Prefix) −55 to 150_C. . . . . . . . . . . . .

Notes
a. Derate 2 mW/_C above 25_C
b. Derate 2.8 mW/_C above 25_C

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit

Static

Gate-Source
Breakdown Voltage

Gate-Source Cutoff Voltage V

Saturation Drain Current I

Gate Reverse Current I

Gate Operating Current

Drain Cutoff Current

Gate-Source Forward Voltage

b

b

b

Dynamic

Common-Source
Forward Transconductance

Common-Source
Output Conductance

Common-Source
Input Capacitance

Common-Source
Reverse Transfer Capacitance

Equivalent Input Noise Voltage

Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NT
b. This parameter not registered with JEDEC.

b

V

(BR)GSS

GS(off)

DSS

GSS

I

D(off)

V

GS(F)

g

g

C

C

e

IG = −1 mA , VDS = 0 V

VDS = 10 V, ID = 1 nA

VDS = 10 V, VGS = 0 V

VGS = −20 V

V

= 0 V

DS

VGS = −20 V

V

= 0 V

DS

= 150_C

T

A

VGS = −10 V

VDS = 0 V

VGS = −10 V

V

= 0 V

DS

= 100_C

T

A

I

G

VDG = 15 V, ID = 30 mA

2N

PN −0.2 −1 −1 −1

SST −0.2 −10 −10 −10

PN/SST −0.03 −2.5 −2.5 −2.5 nA

VDS = 10 V, VGS = −8 V 0.2

IG = 1 mA , VDS = 0 V 0.7 V

fs

os

V

= 10 V, VGS = 0 V

D

f = 1 kHz

2N/PN 1.2 3 3 3

iss

rss

n

VDS = 10 V

VGS = 0 V

f = 1 MHz

VDS = 10 V, VGS = 0 V

f = 1 kHz

SST 1.2

2N/PN 0.3 1.5 1.5 1.5

SST 0.3

1

/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .

(2N Prefix)
(PN, SST Prefix)

a

b

300 mW. . . . . . . . . . . . . . . . . . . . . .

350 mW. . . . . . . . . . . . . . . .

Limits

4117 4118 4119

−70

−40 −40 −40

−0.6 −1.8 −1 −3 −2 −6

90

30

−0.2 −1 −1 −1 pA

−0.4 −2.5 −2.5 −2.5 nA

−0.2

210

70

3 5 10

15

240

80

200

600

mA

pA

pA

250

80

100

330

mS

pF

nV⁄

√Hz

V

www.vishay.com

2

Document Number: 70239

S-41231—Rev. G, 28-Jun-04