Vishay PICA93LV, TSOP62 Series User Manual
VISHAY
TSOP62..
Document Number 82177
Rev. 3, 23-Jun-03
Vishay Semiconductors
www.vishay.com
1
16797
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2
3
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IR Receiver Modules for Remote Control Systems
Description
The TSOP62.. - series are miniaturized SMD-IR
Receiver Modules for infrared remote control systems. PIN diode and preamplifier are assembled on
lead frame, the epoxy package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. TSOP62.. is the standard IR remote control SMD-Receiver series, supporting all major transmission codes.
Features
• Photo detector and preamplifier in one package
• Internal filter for PCM frequency
• Continuous data transmission possible
• TTL and CMOS compatibility
• Output active low
• Low power consumption
• High immunity against ambient light
• Low power consumption
Special Features
• Improved immunity against ambient light
• Suitable burst length ≥ 10 cycles/burst
• Taping available for Topview and Sideview
assembly
Mechanical Data
Pinning:
1 = GND, 2 = GND, 3 = V
S
, 4 = OUT
Parts Table
Block Diagram
Application Circuit
Part Carrier Frequency
TSOP6230 30 kHz
TSOP6233 33 kHz
TSOP6236 36 kHz
TSOP6237 36.7 kHz
TSOP6238 38 kHz
TSOP6240 40 kHz
TSOP6256 56 kHz
30 kΩ
V
S
OUT
Demo-
GND
Pass
AGCInput
PIN
Band
dulator
Control
Circuit
3
4
1;2
16839
C1=
4.7 µF
TSOPxxxx
OUT
GND
Circuit
µC
R1=100Ω
+V
S
GND
Transmitter
with
TSALxxxx
V
S
R1+C1recommended to suppress power supply
disturbances.
V
O
The output voltage should not be hold continuously at
a voltage below V
O
=
3.3 V by the external circuit.
16842
www.vishay.com
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Document Number 82177
Rev. 3, 23-Jun-03
VISHAY
TSOP62..
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Electrical and Optical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter Test condition Symbol Val ue Unit
Supply Voltage Pin 3 V
S
- 0.3 to 6.0 V
Supply Current Pin 3 I
S
5 mA
Output Voltage Pin 4 V
O
- 0.3 to 6.0 V
Output Current Pin 4 I
O
15 mA
Junction Temperature T
j
100 °C
Storage Temperature Range T
stg
- 40 to + 100 °C
Operating Temperature Range T
amb
- 25 to + 85 °C
Power Consumption T
amb
≤ 85 °C P
tot
50 mW
Parameter Test condition Symbol Min Ty p . Max Unit
Supply Current VS = 5 V, Ev = 0 I
SD
0.8 1.1 1.5 mA
VS = 5 V,
E
v
= 40 klx, sunlight
I
SH
1.4 mA
Supply Voltage V
S
4.5 5.5 V
Transmission Distance Ev = 0, test signal see fig.1,
IR diode TSAL6200,
I
F
= 400 mA
d 35 m
Output Voltage Low (Pin 4) I
OSL
= 0.5 mA,
E
e
= 0.7 mW/m2,
test signal see fig. 1
V
OSL
250 mV
Irradiance (30-40 kHz) Pulse width tolerance:
t
pi
- 5/fo < tpo < tpi + 6/fo,
test signal see fig.1
E
e min
0.35 0.5
mW/m
2
Irradiance (56 kHz) Pulse width tolerance:
t
pi
- 5/fo < tpo < tpi + 6/fo,
test signal see fig.1
E
e min
0.4 0.6
mW/m
2
Irradiance tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 1
E
e max
30
W/m
2
Directivity Angle of half transmission
distance
ϕ
1/2
± 50 deg
VISHAY
TSOP62..
Document Number 82177
Rev. 3, 23-Jun-03
Vishay Semiconductors
www.vishay.com
3
Typical Characteristics (T
amb
= 25 °C unless otherwise specified)
Figure 1. Output Function
Figure 2. Pulse Length and Sensitivity in Dark Ambient
Figure 3. Output Function
E
e
T
tpi *
t
* t
pi
w 10/fo is recommended for optimal function
V
O
V
OH
V
OL
t
16110
Optical Test Signal
(IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, T = 10 ms)
Output Signal
t
d
1)
t
po
2)
1)
7/f0< td< 15/f
0
2)
tpi–5/f0< tpo < tpi+6/f
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1 1.0 10.0 100.0 1000.010000.0
Ee – Irradiance ( mW/m2 )
16908
Input Burst Duration
l = 950 nm,
optical test signal, fig.1
Output Pulse
t – Output Pulse Width ( ms )
po
E
e
t
V
O
V
OH
V
OL
t
600 ms 600 ms
T = 60 ms
T
on
T
off
94 8134
Optical Test Signal
Output Signal, ( see Fig.4 )
Figure 4. Output Pulse Diagram
Figure 5. Frequency Dependence of Responsivity
Figure 6. Sensitivity in Bright Ambient
T ,T – Output Pulse Width ( ms )
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1 1.0 10.0 100.0 1000.010000.0
Ee – Irradiance ( mW/m2 )
16909
To ff
l = 950 nm,
optical test signal, fig.3
To n
on off
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.7 0.9 1.1 1.3
f/f0 – Relative Frequency
16925
f = f0"5%
Df ( 3dB ) = f
0
/10
E / E – Rel. Responsivity
e min e
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.01 0.10 1.00 10.00 100.00
E – Ambient DC Irradiance (W/m2)
16911
Correlation with ambient light sources:
10W/m
2
^1.4klx (Std.illum.A,T=2855K)
10W/m
2
^8.2klx (Daylight,T=5900K)
Ambient, l = 950 nm
E – Threshold Irradiance ( mW/m )
e min
2
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4
Document Number 82177
Rev. 3, 23-Jun-03
VISHAY
TSOP62..
Vishay Semiconductors
Figure 7. Sensitivity vs. Supply Voltage Disturbances
Figure 8. Sensitivity vs. Electric Field Disturbances
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
0.0
0.5
1.0
1.5
2.0
0.1 1.0 10.0 100.0 1000.0
DV
sRMS
– AC Voltage on DC Supply Voltage (mV)
16912
f = f
o
f = 10 kHz
E – Threshold Irradiance ( mW/m )
e min
2
f = 1 kHz
f = 100 Hz
E – Threshold Irradiance ( mW/m )
0.0 0.4 0.8 1.2 1.6
0.0
0.4
0.8
1.2
2.0
E – Field Strength of Disturbance ( kV/m )
2.0
94 8147
1.6
e min
2
f(E) = f
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 20 40 60 80 100 120
Burst Length ( number of cycles / burst )
16913
f = 38 kHz, Ee = 2 mW/m
2
Max. Envelope Duty Cycle
Figure 10. Sensitivity vs. Ambient Temperature
Figure 11. Relative Spectral Sensitivity vs. Wavelength
Figure 12. Directivity
0.0
0.1
0.2
0.3
0.4
0.5
0.6
–30–150 153045607590
T
amb
– Ambient Temperature ( qC )
16918
Sensitivity in dark ambient
E – Threshold Irradiance ( mW/m )
e min
2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
750 850 950 1050 1150
l – Wavelength ( nm )
16919
S ( ) – Relative Spectral Sensitivityl
rel
16801
0.4 0.2 0 0.2 0.4
0.6
0.6
0.9
0°
30°
10° 20°
40°
50°
60°
70°
80°
1.0
0.8
0.7
d
rel
- Relative Transmission Distance
VISHAY
TSOP62..
Document Number 82177
Rev. 3, 23-Jun-03
Vishay Semiconductors
www.vishay.com
5
Suitable Data Format
The circuit of the TSOP62.. is designed in that way
that unexpected output pulses due to noise or disturbance signals are avoided. A bandpass filter, an integrator stage and an automatic gain control are used
to suppress such disturbances.
The distinguishing mark between data signal and disturbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fulfill the following conditions:
• Carrier frequency should be close to center fre-
quency of the bandpass (e.g. 38 kHz).
• Burst length should be 10 cycles/burst or longer.
• After each burst which is between 10 cycles and 70
cycles a gap time of at least 14 cycles is necessary.
• For each burst which is longer than 1.8 ms a corre-
sponding gap time is necessary at some time in the
data stream. This gap time should be at least 4 times
longer than the burst.
• Up to 800 short bursts per second can be received
continuously.
Some examples for suitable data format are: NEC
Code (repetitive pulse), NEC Code (repetitive data),
Toshiba Micom Format, Sharp Code, RC5 Code,
RC6 Code, R-2000 Code, Sony Code.
When a disturbance signal is applied to the TSOP62..
it can still receive the data signal. However the sensitivity is reduced to that level that no unexpected
pulses will occur.
Some examples for such disturbance signals which
are suppressed by the TSOP62.. are:
• DC light (e.g. from tungsten bulb or sunlight)
• Continuous signal at 38 kHz or at any other fre-
quency
• Signals from fluorescent lamps with electronic bal-
last with high or low modulation
(see Figure 13 or Figure 14).
Figure 13. IR Signal from Fluorescent Lamp with low Modulation
Figure 14. IR Signal from Fluorescent Lamp with high Modulation
0 5 10 15 20
Time ( ms )
16920
IR Signal
IR Signal from fluorescent
lamp with low modulation
0 5 10 15 20
Time ( ms )
16921
IR Signal
IR Signal from fluorescent
lamp with high modulation
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