Vishay MURB1620CT-1, MURB1620CT, MUR1620CT Data Sheet

Bulletin PD-20718 rev. C 12/03

MUR1620CT

MURB1620CT

MURB1620CT-1

Ultrafast Rectifier

Features

trr = 25ns

Ultrafast Recovery Time

Low Forward Voltage Drop

IF(AV) = 16Amp

Low Leakage Current

• 175°COperatingJunction Temperature

VR = 200V

 

 

Description/Applications

International Rectifier's MUR.. series are the state of the art Ultra fast recovery rectifiers specifically designed with optimized performance of forward voltage drop and ultra fast recovery time.

The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics.

These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives.

Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.

Absolute Maximum Ratings

 

Parameters

 

 

Max

 

Units

VRRM

Peak Repetitive Peak Reverse Voltage

 

200

 

V

IF(AV)

Average Rectified Forward Current

Per Leg

8.0

 

A

 

Total Device, (Rated VR ), TC = 150°C

Total Device

16

 

 

IFSM

Non Repetitive Peak Surge Current

Per Leg

100

 

 

 

 

 

 

 

 

 

IFM

Peak Repetitive Forward Current

Per Leg

16

 

 

 

(Rated VR , Square wave, 20 KHz), TC = 150°C

 

 

 

 

TJ, TSTG

Operating Junction and Storage Temperatures

 

-65 to 175

 

°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Case Styles

 

 

 

 

 

 

 

 

 

 

 

 

MUR1620CT

 

MURB1620CT

 

MURB1620CT-1

 

TO-220AB

 

D2PAK

 

 

TO-262

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

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MUR1620CT, MURB1620CT, MURB1620CT-1

Bulletin PD-20718 rev. C 12/03

Electrical Characteristics

@ TJ = 25°C (unless otherwise specified)

 

Parameters

 

Min

Typ

Max

Units

Test Conditions

 

 

 

 

 

 

 

 

VBR, Vr

Breakdown Voltage,

 

200

-

-

V

IR = 100µA

 

Blocking Voltage

 

 

 

 

 

 

VF

ForwardVoltage

 

-

-

0.975

V

IF = 8A

 

 

 

 

 

 

 

 

 

 

 

-

-

0.895

V

IF = 8A, TJ = 150°C

IR

Reverse Leakage Current

 

-

-

5

µA

VR = VR Rated

 

 

 

 

 

 

 

 

 

 

 

-

-

250

µA

TJ = 150°C, VR = VR Rated

CT

Junction Capacitance

 

-

25

-

pF

VR = 200V

 

 

 

 

 

 

 

 

LS

Series Inductance

 

-

8.0

-

nH

Measured lead to lead 5mm from package body

 

 

 

 

 

 

 

 

Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)

 

Parameters

Min

Typ

Max

Units

Test Conditions

 

 

 

 

 

 

 

 

 

trr

ReverseRecoveryTime

-

-

35

ns

IF = 1.0A, diF/dt = 50A/µs, VR = 30V

 

 

-

-

25

 

IF = 0.5A, IR = 1.0A, IREC = 0.25A

 

 

-

20

-

 

TJ = 25°C

 

IF = 8A

 

 

 

34

 

 

TJ = 125°C

 

VR = 160V

 

 

 

 

 

 

diF /dt = 200A/µs

IRRM

Peak Recovery Current

-

1.7

-

A

TJ = 25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

-

4.2

-

 

TJ = 125°C

 

 

 

 

 

 

 

 

 

 

 

Qrr

ReverseRecoveryCharge

-

23

-

nC

TJ = 25°C

 

 

 

 

-

75

-

 

TJ = 125°C

 

 

 

 

 

 

 

 

 

 

 

Thermal - Mechanical Characteristics

 

Parameters

 

Min

Typ

Max

Units

TJ

Max.JunctionTemperatureRange

 

-

-

- 65 to 175

°C

 

 

 

 

 

 

 

TStg

Max.StorageTemperatureRange

 

-

-

- 65 to 175

 

 

 

 

 

 

 

 

RthJC

Thermal Resistance, Junction to Case

Per Leg

-

-

3.0

°C/W

 

 

 

 

 

 

 

RthJA

Thermal Resistance, Junction to Ambient

Per Leg

-

-

50

 

RthCS c

Thermal Resistance, Case to Heatsink

 

-

0.5

-

 

Wt

Weight

 

-

2.0

-

g

 

 

 

 

 

 

 

 

 

 

-

0.07

-

(oz)

 

 

 

 

 

 

 

 

MountingTorque

 

6.0

-

12

Kg-cm

 

 

 

 

 

 

 

 

 

 

5.0

-

10

lbf.in

 

 

 

 

 

 

 

cMounting Surface, Flat, Smooth and Greased

2

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Vishay MURB1620CT-1, MURB1620CT, MUR1620CT Data Sheet

 

 

 

 

 

 

 

 

 

 

MUR1620CT, MURB1620CT, MURB1620CT-1

 

 

 

 

 

 

 

 

 

 

 

 

Bulletin

PD-20718

rev. C

12/03

 

100

 

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>(µA)

10

TJ = 175˚C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

150˚C

 

 

 

 

 

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>R

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>-I

1

125˚C

 

 

 

 

 

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>ReverseCurrent

 

 

 

 

 

 

 

 

 

 

 

 

 

 

100˚C

 

 

 

 

 

 

 

 

 

 

 

 

 

0.1

 

 

 

 

 

<![if ! IE]>

<![endif]>(A)

10

 

 

 

 

 

 

 

 

0.01

25˚C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>F

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>-I

 

 

 

 

 

T

= 175˚C

 

 

0.001

 

 

 

 

 

<![if ! IE]>

<![endif]>InstantaneousForwardCurrent

 

 

 

 

 

J

 

 

 

 

0

50

100

150

200

250

 

 

 

 

 

TJ

= 150˚C

 

 

 

 

 

 

 

 

 

 

ReverseVoltage-VR(V)

 

 

 

 

 

 

TJ

=

25˚C

 

 

Fig.2-Typical Values Of Reverse Current

 

 

 

 

 

 

 

 

 

 

 

Vs. Reverse Voltage

 

 

 

 

 

 

 

 

 

 

 

1000

 

 

 

 

 

1

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>(pF)

 

 

TJ = 25˚C

 

 

 

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>T

 

 

 

 

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>Capacitance - C

100

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>Junction

 

 

 

 

 

 

 

0.1

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

1

10

100

1000

ForwardVoltageDrop-VFM(V)

ReverseVoltage-V (V)

Fig.1-Typical Forward Voltage Drop Characteristics

R

Fig. 3 - Typical Junction Capacitance

 

Vs. Reverse Voltage

 

10

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>(°C/W)

 

D = 0.50

 

 

 

 

 

 

 

D = 0.20

 

 

 

 

 

 

<![if ! IE]>

<![endif]>thJC

1

 

 

 

 

 

 

D = 0.10

 

 

 

 

 

 

<![if ! IE]>

<![endif]>ThermalImpedanceZ

 

 

 

 

 

 

 

 

D = 0.05

 

 

 

 

PDM

 

 

D = 0.02

 

 

 

 

t1

 

 

D = 0.01

 

 

 

 

 

0.1

 

 

 

 

 

t 2

 

 

 

 

 

Notes:

 

 

 

 

 

Single Pulse

 

1. Duty factor D =

t1/t 2

 

 

 

(Thermal Resistance)

2. Peak Tj = Pdm x ZthJC + Tc

 

 

 

 

 

 

 

 

0.01

 

 

 

 

 

 

 

 

0.00001

0.0001

0.001

0.01

0.1

1

 

 

 

t1,RectangularPulseDuration(Seconds)

 

 

 

Fig. 4 - Max. Thermal Impedance Z thJC Characteristics

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