Vishay MURB1020CT-1, MURB1020CT, MUR1020CT Data Sheet

Bulletin PD-20738 rev. B 12/03

MUR1020CT

MURB1020CT

MURB1020CT-1

Ultrafast Rectifier

	Features		trr	= 25ns
	•	Ultrafast Recovery Time
			IF(AV) = 10Amp
	•	Low Forward Voltage Drop
	•	Low Leakage Current	VR = 200V
	• 175°COperatingJunction Temperature

Description/Applications

International Rectifier's MUR.. series are the state of the art Ultra fast recovery rectifiers specifically designed with optimized performance of forward voltage drop and ultra fast recovery time.

The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics.

These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives.

Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.

Absolute Maximum Ratings

	Parameters				Max		Units
VRRM	Peak Repetitive Peak Reverse Voltage				200		V
IF(AV)	Average Rectified Forward Current		Per Leg		5		A
	Total Device, (Rated VR ), TC = 149°C		TotalDevice		10
IFSM	Non Repetitive Peak Surge Current		Per Leg		50
IFM	Peak Repetitive Forward Current		Per Leg		10
	(Rated VR , Square wave, 20 KHz), TC = 149°C
TJ, TSTG	Operating Junction and Storage Temperatures				- 65 to 175		°C
			Case Styles
	MUR1020CT		MURB1020CT		MURB1020CT-1
	TO-220AB		D2PAK			TO-262

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MUR1020CT, MURB1020CT, MURB1020CT-1

Bulletin PD-20738 rev. B 12/03

Electrical Characteristics		@ TJ = 25°C (unless otherwise specified)
	Parameters		Min	Typ	Max	Units	Test Conditions
VBR, Vr	Breakdown Voltage,		200	-	-	V	IR = 100µA
	Blocking Voltage
VF	ForwardVoltage		-	0.87	0.99	V	IF = 5A, TJ = 125°C
			-	1.02	1.20	V	IF = 10A, TJ = 125°C
			-	1.12	1.25	V	IF = 10A, TJ = 25°C
IR	Reverse Leakage Current		-	-	10	µA	VR = VR Rated
			-	-	250	µA	TJ = 150°C, VR = VR Rated
CT	Junction Capacitance		-	8	-	pF	VR = 200V
LS	Series Inductance		-	8.0	-	nH	Measured lead to lead 5mm. from package body

Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)

	Parameters	Min	Typ	Max	Units	Test Conditions
trr	ReverseRecoveryTime	-	-	35	ns	IF = 1.0A, diF/dt = 50A/µs, VR = 30V
		-	-	25		IF = 0.5A, IR = 1.0A, IREC = 0.25A
		-	24	-		TJ = 25°C		IF = 5A
			35			TJ = 125°C		VR = 160V
								diF /dt = 200A/µs
IRRM	Peak Recovery Current	-	3.3	-	A	TJ = 25°C
		-	5.0	-		TJ = 125°C
Qrr	ReverseRecoveryCharge	-	33	-	nC	TJ = 25°C
		-	76	-		TJ = 125°C

Thermal - Mechanical Characteristics

	Parameters		Min	Typ	Max	Units
TJ	Max.JunctionTemperatureRange		-	-	- 65 to 175	°C
TStg	Max.StorageTemperatureRange		-	-	- 65 to 175
RthJC	Thermal Resistance, Junction to Case	Per Leg	-	-	5	°C/W
RthJA	Thermal Resistance, Junction to Ambient	Per Leg	-	-	50
RthCS c	Thermal Resistance, Case to Heatsink		-	0.5	-
Wt	Weight		-	2.0	-	g
			-	0.07	-	(oz)
	MountingTorque		6.0	-	12	Kg-cm
			5.0	-	10	lbf.in
c Mounting Surface, Flat, Smooth and Greased
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									MUR1020CT, MURB1020CT, MURB1020CT-1
											Bulletin	PD-20738		rev. B	12/03
	100									100
										10	TJ = 175˚C
									<![if ! IE]> <![endif]>(µA)		150˚C
										1	125˚C
									<![if ! IE]> <![endif]>R
									<![if ! IE]> <![endif]>-I
											100˚C
									<![if ! IE]> <![endif]>ReverseCurrent
										0.1
										0.01
<![if ! IE]> <![endif]>(A)	10									0.001	25˚C
<![if ! IE]> <![endif]>F
<![if ! IE]> <![endif]>-I										0.0001
<![if ! IE]> <![endif]>InstantaneousForwardCurrent
						T J		= 175˚C		0	40	80	120	160	200
											ReverseVoltage-VR(V)
						T		= 125˚C
							J			Fig.2-Typical Values Of Reverse Current
											Vs. Reverse Voltage
						T J		= 25˚C
										100
	1								<![if ! IE]> <![endif]>(pF)		T J = 25˚C
									<![if ! IE]> <![endif]>T
									<![if ! IE]> <![endif]>Capacitance - C	10
									<![if ! IE]> <![endif]>Junction
	0.1								1.6	1
	0.2	0.4	0.6	0.8	1	1.2		1.4		1	10		100		1000

ForwardVoltageDrop-VFM(V)	ReverseVoltage-VR(V)
Fig.1-Typical Forward Voltage Drop Characteristics	Fig. 3 - Typical Junction Capacitance
	Vs. Reverse Voltage

	10
<![if ! IE]> <![endif]>(°C/W)		D = 0.50
<![if ! IE]> <![endif]>thJC	1
		D = 0.20
<![if ! IE]> <![endif]>ThermalImpedanceZ
		D = 0.10		PDM
		D = 0.05
		D = 0.02		t1
		D = 0.01
	0.1			t 2
			Notes:
		Single Pulse	1. Duty factor D =	t1/ t2
		(Thermal Resistance)	2. Peak Tj = Pdm x ZthJC + Tc

0.01
0.00001		0.0001	0.001	0.01							0.1								1
		t1,RectangularPulseDuration(Seconds)
		Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
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