Vishay MURB820, MUR820, MURB820-1 Data Sheet
1
Case Styles
MUR820
TO-220AC
MURB820
D
2
PAK
MURB820-1
TO-262
V
RRM
Peak Repetitive Peak Reverse Voltage 200 V
I
F(AV)
Average Rectified Forward Current 8 A
Total Device, (Rated V
R
), T
C
= 150°C
I
FSM
Non Repetitive Peak Surge Current 100
I
FM
Peak Repetitive Forward Current 16
(Rated V
R
, Square wave, 20 KHz), T
C
= 150°C
T
J
,
T
STG
Operating Junction and Storage Temperatures -65 to 175 °C
Parameters Max Units
MUR820
MURB820
MURB820-1
Bulletin PD-20731 rev. C 12/03
t
rr
= 25ns
I
F(AV)
= 8Amp
V
R
= 200V
• Ultrafast Recovery Time
• Low Forward Voltage Drop
• Low Leakage Current
• 175°C Operating Junction Temperature
Features
Description/ Applications
International Rectifier's MUR.. series are the state of the art Ultra fast recovery rectifiers specifically designed with
optimized performance of forward voltage drop and ultra fast recovery time.
The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as free-
wheeling diode in low voltage inverters and chopper motor drives.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Ultrafast Rectifier
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MUR820, MURB820, MURB820-1
Bulletin PD-20731 rev. C 12/03
2
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V
BR
,
V
r
Breakdown Voltage, 200 - - V I
R
= 100µA
Blocking Voltage
V
F
Forward Voltage - - 0.975 V I
F
= 8A
- - 0.895 V I
F
= 8A, T
J
= 150°C
I
R
Reverse Leakage Current - - 5 µA V
R
= V
R
Rated
- - 250 µA T
J
= 150°C, V
R
= V
R
Rated
C
T
Junction Capacitance - 25 - pF V
R
= 200V
L
S
Series Inductance - 8.0 - nH .
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
Measured lead to lead 5mm from package body
t
rr
Reverse Recovery Time --35 ns I
F
= 1.0A, di
F
/dt = 50A/µs, V
R
= 30V
--25 I
F
= 0.5A, I
R
= 1.0A, I
REC
= 0.25A
-20- T
J
= 25°C
34 T
J
= 125°C
I
RRM
Peak Recovery Current - 1.7 - A T
J
= 25°C
- 4.2 - T
J
= 125°C
Q
rr
Reverse Recovery Charge - 23 - nC T
J
= 25°C
-75- T
J
= 125°C
Dynamic Recovery Characteristics @ T
J
= 25°C (unless otherwise specified)
I
F
= 8A
V
R
= 160V
di
F
/dt = 200A/µs
Parameters Min Typ Max Units Test Conditions
Parameters Min Typ Max Units
T
J
Max. Junction Temperature Range - - - 65 to 175 °C
T
Stg
Max. Storage Temperature Range - - - 65 to 175
R
thJC
Thermal Resistance, Junction to Case - - 3.0 °C/ W
R
thJA
Thermal Resistance, Junction to Ambient - - 50
R
thCS
Thermal Resistance, Case to Heatsink - 0.5 -
Wt Weight - 2.0 - g
- 0.07 - (oz)
Mounting Torque 6.0 - 12 Kg-cm
5.0 - 10 lbf.in
Thermal - Mechanical Characteristics
c Mounting Surface, Flat, Smooth and Greased
c
Bulletin PD-20731 rev. C 12/03
3
MUR820, MURB820, MURB820-1
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Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
Fig. 1 - Typical Forward Voltage Drop Characteristics
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
T = 175˚C
T = 150˚C
T = 25˚C
J
J
J
0.001
0.01
0.1
1
10
100
0 50 100 150 200 250
150˚C
125˚C
100˚C
25˚C
T = 175˚C
J
10
100
1000
1 10 100 1000
T = 25˚C
J
Forward Voltage Drop - V
FM
(V)
Instantaneous Forward Current - I
F
(A)
Reverse Voltage - V
R
(V)
Junction Capacitance - C
T
(pF)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
t1, Rectangular Pulse Duration (Seconds)
Thermal Impedance Z
thJC
(°C/W)
Reverse Current - I
R
(µA)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Single Pulse
(Thermal Resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
2
t
1
t
P
DM
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
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