Vishay MURB820, MUR820, MURB820-1 Data Sheet
Ultrafast Rectifier
Bulletin PD-20731 rev. C 12/03
MUR820
MURB820
MURB820-1
Features
• Ultrafast Recovery Time
• Low Forward Voltage Drop
• Low Leakage Current
• 175°C Operating Junction Temperature
Description/ Applications
International Rectifier's MUR.. series are the state of the art Ultra fast recovery rectifiers specifically designed with
optimized performance of forward voltage drop and ultra fast recovery time.
The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
t
= 25ns
rr
I
= 8Amp
F(AV)
VR = 200V
Absolute Maximum Ratings
Parameters Max Units
V
RRM
I
F(AV)
I
FSM
I
FM
TJ, T
Peak Repetitive Peak Reverse Voltage 200 V
Average Rectified Forward Current 8 A
Total Device, (Rated VR ), TC = 150°C
Non Repetitive Peak Surge Current 100
Peak Repetitive Forward Current 16
(Rated VR , Square wave, 20 KHz), TC = 150°C
Operating Junction and Storage Temperatures -65 to 175 °C
STG
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MUR820
TO-220AC
Case Styles
MURB820
D2PAK
MURB820-1
TO-262
1
MUR820, MURB820, MURB820-1
Bulletin PD-20731 rev. C 12/03
Electrical Characteristics @ T
= 25°C (unless otherwise specified)
J
Parameters Min Typ Max Units Test Conditions
VBR, VrBreakdown Voltage, 200 - - V IR = 100µA
Blocking Voltage
V
F
Forward Voltage - - 0.975 V IF = 8A
- - 0.895 V IF = 8A, TJ = 150°C
I
R
Reverse Leakage Current - - 5 µA VR = VR Rated
- - 250 µA TJ = 150°C, VR = VR Rated
C
T
L
S
Junction Capacitance - 25 - pF VR = 200V
Series Inductance - 8.0 - nH .
Measured lead to lead 5mm from package body
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
t
rr
I
RRM
Q
rr
Reverse Recovery Time --35 ns IF = 1.0A, diF/dt = 50A/µs, VR = 30V
--25 IF = 0.5A, IR = 1.0A, I
-20- TJ = 25°C
34 TJ = 125°C
= 0.25A
REC
IF = 8A
VR = 160V
diF /dt = 200A/µs
Peak Recovery Current - 1.7 - A TJ = 25°C
- 4.2 - TJ = 125°C
Reverse Recovery Charge - 23 - nC TJ = 25°C
-75- TJ = 125°C
Thermal - Mechanical Characteristics
Parameters Min Typ Max Units
T
J
T
Stg
R
thJC
R
thJA
R
thCS
Wt Weight - 2.0 - g
c Mounting Surface, Flat, Smooth and Greased
2
Max. Junction Temperature Range - - - 65 to 175 °C
Max. Storage Temperature Range - - - 65 to 175
Thermal Resistance, Junction to Case - - 3.0 °C/ W
Thermal Resistance, Junction to Ambient - - 50
c
Thermal Resistance, Case to Heatsink - 0.5 -
- 0.07 - (oz)
Mounting Torque 6.0 - 12 Kg-cm
5.0 - 10 lbf.in
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MUR820, MURB820, MURB820-1
Bulletin PD-20731 rev. C 12/03
100
10
(A)
F
1
Instantaneous Forward Current - I
T = 175˚C
J
T = 150˚C
J
T = 25˚C
J
100
T = 175˚C
J
(µA)
R
10
1
150˚C
125˚C
100˚C
0.1
Reverse Current - I
0.01
0.001
0 50 100 150 200 250
25˚C
Reverse Voltage - VR (V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
1000
(pF)
T
T = 25˚C
J
100
0.1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
Forward Voltage Drop - VFM (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
10
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
(°C/W)
thJC
0.1
Single Pulse
Thermal Impedance Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1
(Thermal Resistance)
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
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Junction Capacitance - C
10
1 10 100 1000
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
Characteristics
thJC
3
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