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MUR 3020WT VIS
Datasheet
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VISHAY MUR 3020WT VIS Datasheet

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Base
common
cathode
Common
cathode
2
2
13
Anode
1
Anode
2
TO-247AC
VS-MUR3020WTPbF, VS-MUR3020WT-N3
Vishay Semiconductors
Ultrafast Rectifier, 2 x 15 A FRED Pt
PRODUCT SUMMARY
Package TO-247AC
I
F(AV)
V
R
V
at I
F
F
t
typ. See Recovery table
rr
T
max. 175 °C
J
Diode variation Common cathode
2 x 15 A
200 V
1.05 V
®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition (-N3 only)
DESCRIPTION/APPLICATIONS
VS-MUR3020WT... is the state of the art ultrafast recovery rectifier specifically designed with optimized performance of forward voltage drop and ultrafast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage V
Average rectified forward current
Non-repetitive peak surge current per leg I
Peak repetitive forward current per leg I
Operating junction and storage temperatures T
per leg
total device Rated V
RRM
I
F(AV)
FSM
, T
J
FM
, TC = 150 °C 30
R
Rated VR, square wave, 20 kHz, TC = 150 °C 30
Stg
200 V
15
200
- 65 to 175
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage, blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
,
V
BR
V
R
IR = 100 μA 200 - -
R
IF = 15 A - - 1.05
F
I
= 15 A, TJ = 150 °C - - 0.85
F
VR = VR rated - - 10
T
= 150 °C, VR = VR rated - - 500
J
VR = 200 V - 55 - pF
T
Measured lead to lead 5 mm from package body - 12 - nH
S
A
°C
V
μA
Revision: 15-Aug-11
1
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 94080
Page 2
VS-MUR3020WTPbF, VS-MUR3020WT-N3
www.vishay.com
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - - 35
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
rr
= 25 °C
J
T
= 125 °C - 39 -
J
TJ = 25 °C - 1.6 -
T
= 125 °C - 4.1 -
J
TJ = 25 °C - 19 -
T
= 125 °C - 90 -
J
I
= 15 A
F
/dt = 200 A/μs
dI
F
= 160 V
V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage temperature range
Thermal resistance, junction to case per leg
Thermal resistance, junction to ambient per leg
Thermal resistance, case to heatsink
Weight
Mounting torque
Marking device Case style TO-247AC MUR3020WT
, T
T
J
Stg
R
--1.5
thJC
R
thJA
R
thCS
Typical socket mount - - 40
Mounting surface, flat, smooth and greased
Vishay Semiconductors
-22-
- 65 - 175 °C
-0.5-
-6.0- g
-0.21- oz.
6.0
(5.0)
-
12
(10)
nsT
A
nC
°C/W
kgf · cm
(lbf · in)
Revision: 15-Aug-11
For technical questions within your region: DiodesAmericas@vishay.com
2
Document Number: 94080
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Page 3
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1
10
TJ = 175 °C T
J
= 150 °C
T
J
= 25 °C
0 1.50.3 0.9
VF - Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
1.2
0.1
0.6
0.01
0.1
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
1
Single pulse
(thermal resistance)
D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01
VS-MUR3020WTPbF, VS-MUR3020WT-N3
Vishay Semiconductors
1000
TJ = 175 °C
100
10
1
- Reverse Current (µA)
0.1
R
I
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
0.01
0 100 150
200 25050
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
100
- Junction Capacitance (pF)
T
C
10
1 10 100 1000
TJ = 25 °C
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
Revision: 15-Aug-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
thJC
Characteristics
Document Number: 94080
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05
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
160
170
180
See note (1)
150
DC
140
130
10 15 20
Square wave (D = 0.50) Rated V
R
applied
25
100 1000
t
rr
(ns)
dIF/dt (A/µs)
20
40
VR = 160 V T
J
= 125 °C
T
J
= 25 °C
30
50
10
60
IF = 30 A I
F
= 15 A
I
F
= 8 A
100 1000
Q
rr
(nC)
dIF/dt (A/µs)
40
IF = 30 A I
F
= 15 A
I
F
= 8 A
200
120
VR = 160 V T
J
= 125 °C
T
J
= 25 °C
80
160
0
VS-MUR3020WTPbF, VS-MUR3020WT-N3
Vishay Semiconductors
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
25
20
15
10
5
Average Power Loss (W)
0
01020
I
DC
515
- Average Forward Current (A)
F(AV)
Fig. 6 - Forward Power Loss Characteristics
Note
(1)
Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V
REV
x VFM at (I
F(AV)
REV
) x R
RMS limit
D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50
;
thJC
F(AV)
25
/D) (see fig. 6);
Fig. 7 - Typical Reverse Recovery Time vs. dI
Fig. 8 - Typical Stored Charge vs. dI
R
/dt
F
/dt
F
Revision: 15-Aug-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
4
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 94080
Page 5
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Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dIF/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured from zero crossing point of negative going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve dened by t
rr
and I
RRM
trr x I
RRM
2
Q
rr
=
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
VS-MUR3020WTPbF, VS-MUR3020WT-N3
Vishay Semiconductors
= 200 V
V
R
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
Revision: 15-Aug-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 10 - Reverse Recovery Waveform and Definitions
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5
Document Number: 94080
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2 - Ultrafast MUR series (TO-247AC)
3 - Current rating (30 = 30 A)
4
- Voltage rating (20 = 200 V)
5
- WT = Center tap (dual) TO-247
1 - Vishay Semiconductors product
6
PbF = Lead (Pb)-free and RoHS compliant
Device code
51 32 4 6
VS- MUR 30 20 WT PbF
- Environmental digit:
-N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free
ORDERING INFORMATION TABLE
VS-MUR3020WTPbF, VS-MUR3020WT-N3
Vishay Semiconductors
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-MUR3020WTPbF 25 500 Antistatic plastic tube
VS-MUR3020WT-N3 25 500 Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95223
Part marking information TO-247ACPbF www.vishay.com/doc?95226
TO-247AC-N3 www.vishay.com/doc?95007
Revision: 15-Aug-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
6
Document Number: 94080
Page 7
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0.10 AC
M M
E
N
(2)
(3)
(4)
(4)
(2) R/2
B
2 x R
S
D
See view B
2 x e
b4
3 x b
2 x b2
L
C
(5) L1
1
2
3
Q
D
A
A2
A
A
A1
C
Ø K BD
M M
A
(6)
Ø P
(Datum B)
FP1
D1 (4)
4
E1
0.01 BD
M M
View A - A
Thermal pad
D2
DDE E
C
C
View B
(b1, b3, b5)
Base metal
c1
(b, b2, b4)
Section C - C, D - D, E - E
(c)
Planting
Lead assignments
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
DIMENSIONS in millimeters and inches
Outline Dimensions
Vishay Semiconductors
SYMBOL
MILLIMETERS INCHES MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
NOTES SYMBOL
MILLIMETERS INCHES
NOTES
A 4.65 5.31 0.183 0.209 D2 0.51 1.30 0.020 0.051 A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3 A2 1.50 2.49 0.059 0.098 E1 13.72 - 0.540 -
b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC b1 0.99 1.35 0.039 0.053 FK 2.54 0.010 b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 L1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 N 7.62 BSC 0.3 b5 2.59 3.38 0.102 0.133 P 3.56 3.66 0.14 0.144
c 0.38 0.86 0.015 0.034 P1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224
D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 1.78 0.216
D1 13.08 - 0.515 - 4 S 5.51 BSC 0.217 BSC
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5M-1994
(2)
(3)
(4)
(5)
(6)
(7)
Contour of slot optional Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body Thermal pad contour optional with dimensions D1 and E1 Lead finish uncontrolled in L1 Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 16-Jun-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
1
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 95223
Page 8
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
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