Vishay MUR3020WTPBF Data Sheet
TO-247AC
VS-MUR3020WTPbF
Vishay Semiconductors
Ultrafast Rectifier, 2 x 15 A FRED Pt
Anode
1
PRODUCT SUMMARY
Package TO-247AC
I
F(AV)
V
R
V
at I
F
F
t
typ. See Recovery table
rr
max. 175 °C
T
J
Diode variation Common cathode
Base
common
cathode
2
13
Common
cathode
2 x 15 A
200 V
1.05 V
Anode
2
2
®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
VS-MUR3020WTPbF is the state of the art ultrafast recovery
rectifier specifically designed with optimized performance of
forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage V
Average rectified forward current
Non-repetitive peak surge current per leg I
Peak repetitive forward current per leg I
Operating junction and storage temperatures T
per leg
total device Rated V
RRM
I
F(AV)
FSM
, T
J
FM
, TC = 150 °C 30
R
Rated VR, square wave, 20 kHz, TC = 150 °C 30
Stg
200 V
15
200
- 65 to
175
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
,
V
BR
V
R
IR = 100 μA 200 - -
R
IF = 15 A - - 1.05
F
I
= 15 A, TJ = 150 °C - - 0.85
F
VR = VR rated - - 10
T
= 150 °C, VR = VR rated - - 500
J
VR = 200 V - 55 - pF
T
Measured lead to lead 5 mm from package body - 12 - nH
S
V
μA
Document Number: 94080 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 17-Feb-11 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
VS-MUR3020WTPbF
Vishay Semiconductors
Ultrafast Rectifier, 2 x 15 A FRED Pt
®
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - - 35
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
= 25 °C
J
= 125 °C - 39 -
T
J
TJ = 25 °C - 1.6 -
T
= 125 °C - 4.1 -
J
TJ = 25 °C - 19 -
rr
T
= 125 °C - 90 -
J
I
= 15 A
F
/dt = 200 A/μs
dI
F
= 160 V
V
R
-22-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
Thermal resistance,
junction to case per leg
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device Case style TO-247AC MUR3020WT
, T
T
J
Stg
R
--1.5
thJC
R
thJA
R
thCS
Typical socket mount - - 40
Mounting surface, flat, smooth and
greased
- 65 - 175 °C
-0.5-
-6.0- g
-0.21- oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
nsT
A
nC
°C/W
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94080
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 17-Feb-11
0.01
0.1
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
1
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
VS-MUR3020WTPbF
®
Vishay Semiconductors
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
200 25050
VR - Reverse Voltage (V)
100
10
1
0.1
- Instantaneous Forward Current (A)
F
I
0 1.50.3 0.9
Ultrafast Rectifier, 2 x 15 A FRED Pt
TJ = 175 °C
= 150 °C
T
J
= 25 °C
T
J
0.6
VF - Forward Voltage Drop (V)
1.2
1000
100
10
1
- Reverse Current (µA)
0.1
R
I
0.01
0 100 150
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
100
- Junction Capacitance (pF)
T
C
10
1 10 100 1000
TJ = 25 °C
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Document Number: 94080 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 17-Feb-11 DiodesAmericas@vishay.com
Fig. 4 - Maximum Thermal Impedance Z
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
thJC
Characteristics
Loading...