Vishay MUR3020WTPBF Data Sheet

VS-MUR3020WTPbF

Vishay Semiconductors

Ultrafast Rectifier, 2 x 15 A FRED Pt®

Base common cathode

2

1

3

TO-247AC	Anode	2	Anode
	1		2

Common

cathode

PRODUCT SUMMARY

Package	TO-247AC
IF(AV)	2 x 15 A
VR	200 V
VF at IF	1.05 V
trr typ.	See Recovery table
TJ max.	175 °C
Diode variation	Common cathode

FEATURES

• Ultrafast recovery time

• Low forward voltage drop

• 175 °C operating junction temperature

•Low leakage current

•Compliant to RoHS Directive 2002/95/EC

•Designed and qualified for industrial level

DESCRIPTION/APPLICATIONS

VS-MUR3020WTPbF is the state of the art ultrafast recovery rectifier specifically designed with optimized performance of forward voltage drop and ultrafast recovery time.

The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics.

These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives.

Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.

ABSOLUTE MAXIMUM RATINGS

	PARAMETER		SYMBOL	TEST CONDITIONS	MAX.	UNITS
	Peak repetitive reverse voltage		VRRM		200	V
	Average rectified forward current	per leg	IF(AV)		15
		total device		Rated VR, TC = 150 °C	30	A
	Non-repetitive peak surge current per leg		IFSM		200
	Peak repetitive forward current per leg		IFM	Rated VR, square wave, 20 kHz, TC = 150 °C	30
	Operating junction and storage temperatures		TJ, TStg		- 65 to	°C
					175

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

	PARAMETER	SYMBOL	TEST CONDITIONS	MIN.	TYP.	MAX.	UNITS
	Breakdown voltage,	VBR,	IR = 100 μA	200	-	-
	blocking voltage	VR
							V
	Forward voltage	VF	IF = 15 A	-	-	1.05
			IF = 15 A, TJ = 150 °C	-	-	0.85
	Reverse leakage current	IR	VR = VR rated	-	-	10	μA
			TJ = 150 °C, VR = VR rated	-	-	500
	Junction capacitance	CT	VR = 200 V	-	55	-	pF
	Series inductance	LS	Measured lead to lead 5 mm from package body	-	12	-	nH

Document Number: 94080	For technical questions within your region, please contact one of the following:	www.vishay.com
Revision: 17-Feb-11	[e-mail], [e-mail], [e-mail]	1

VS-MUR3020WTPbF

Vishay Semiconductors Ultrafast Rectifier, 2 x 15 A FRED Pt®

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

	PARAMETER	SYMBOL	TEST CONDITIONS		MIN.	TYP.	MAX.	UNITS
			IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V		-	-	35
	Reverse recovery time	trr	TJ = 25 °C		-	22	-	ns
			TJ = 125 °C	IF = 15 A	-	39	-
			TJ = 25 °C		-	1.6	-	A
	Peak recovery current	IRRM		dIF/dt = 200 A/μs
			TJ = 125 °C		-	4.1	-
				VR = 160 V
	Reverse recovery charge	Qrr	TJ = 25 °C		-	19	-	nC
			TJ = 125 °C		-	90	-

THERMAL - MECHANICAL SPECIFICATIONS

	PARAMETER	SYMBOL	TEST CONDITIONS	MIN.	TYP.	MAX.	UNITS
	Maximum junction and storage	TJ, TStg		- 65	-	175	°C
	temperature range
	Thermal resistance,	RthJC		-	-	1.5
	junction to case per leg
	Thermal resistance,	RthJA	Typical socket mount	-	-	40	°C/W
	junction to ambient per leg
	Thermal resistance,	RthCS	Mounting surface, flat, smooth and	-	0.5	-
	case to heatsink		greased
	Weight			-	6.0	-	g
				-	0.21	-	oz.
	Mounting torque			6.0	-	12	kgf · cm
				(5.0)		(10)	(lbf · in)
	Marking device		Case style TO-247AC		MUR3020WT

www.vishay.com	For technical questions within your region, please contact one of the following:	Document Number: 94080
2	[e-mail], [e-mail], [e-mail]	Revision: 17-Feb-11

VS-MUR3020WTPbF

Ultrafast Rectifier, 2 x 15 A FRED Pt® Vishay Semiconductors

<![if ! IE]>

<![endif]>IF - Instantaneous Forward Current (A)

100						1000
					<![if ! IE]> <![endif]>(µA)			TJ = 175 °C
						100		TJ = 150 °C
					<![if ! IE]> <![endif]>Current
10						10		TJ = 125 °C
								TJ = 100 °C
					<![if ! IE]> <![endif]>Reverse-
			TJ	= 175 °C		1
			TJ = 150 °C
1
			TJ	= 25 °C
					<![if ! IE]> <![endif]>R	0.1		TJ = 25 °C
					<![if ! IE]> <![endif]>I
0.1						0.01	50			200	250
0	0.3	0.6	0.9	1.2	1.5	0		100	150

VF - Forward Voltage Drop (V)

VR - Reverse Voltage (V)

Fig. 1 - Typical Forward Voltage Drop Characteristics

Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

<![if ! IE]> <![endif]>(pF)

1000

<![if ! IE]> <![endif]>Capacitance

100

<![if ! IE]> <![endif]>- Junction

TJ = 25 °C

<![if ! IE]> <![endif]>T

<![if ! IE]> <![endif]>C

10

1

10

100

1000

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

<![if ! IE]> <![endif]>(°C/W)	10
<![if ! IE]> <![endif]>Impedance	1
					PDM
<![if ! IE]> <![endif]>- Thermal			D = 0.50		t1
	0.1		D = 0.20		t2
			D = 0.10
			D = 0.05		Notes:
<![if ! IE]> <![endif]>thJC		Single pulse	D = 0.02		1. Duty factor D = t1/t2 .
		(thermal resistance)	D = 0.01		2. Peak TJ = PDM x ZthJC	+ TC	.
<![if ! IE]> <![endif]>Z	0.01
	0.00001	0.0001	0.001	0.01	0.1		1

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics

Document Number: 94080	For technical questions within your region, please contact one of the following:	www.vishay.com
Revision: 17-Feb-11	[e-mail], [e-mail], [e-mail]	3