Vishay MUR2020CTPBF Data Sheet

VS-MUR2020CTPbF

Vishay Semiconductors

Ultrafast Rectifier, 2 x 10 A FRED Pt®

		Base
		common
		cathode
		2
		2
		Common
TO-220AB	Anode	cathode	Anode
	1		3

PRODUCT SUMMARY

Package	TO-220AB
IF(AV)	2 x 10 A
VR	200 V
VF at IF	See Electrical table
trr typ.	See Recovery table
TJ max.	175 °C
Diode variation	Common cathode

FEATURES

• Ultrafast recovery time

• Low forward voltage drop

• 175 °C operating junction temperature

• Low leakage current

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

DESCRIPTION/APPLICATIONS

VS-MUR2020CTPbF is the state of the art ultrafast recovery rectifier specifically designed with optimized performance of forward voltage drop and ultrafast recovery time.

The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics.

These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives.

Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

UNITS

Peak repetitive reverse voltage

VRRM

200

V

Average rectified forward current

per leg

IF(AV)

10

total device

Rated VR, TC = 145 °C

20

A

Non-repetitive peak surge current per leg

IFSM

100

Peak repetitive forward current per leg

IFM

Rated VR, square wave, 20 kHz, TC = 145 °C

20

Operating junction and storage temperatures

TJ, TStg

- 65 to

°C

175

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,

VBR,

IR = 100 μA

200

-

-

blocking voltage

VR

IF = 8 A, TJ = 125 °C

-

-

0.85

V

Forward voltage

VF

IF = 16 A

-

-

1.15

IF = 16 A, TJ = 125 °C

-

-

1.05

Reverse leakage current

IR

VR = VR rated

-

-

15

μA

TJ = 150 °C, VR = VR rated

-

-

250

Junction capacitance

CT

VR = 200 V

-

55

-

pF

Series inductance

LS

Measured lead to lead 5 mm from package body

-

8.0

-

nH

Document Number: 94079

For technical questions within your region, please contact one of the following:

www.vishay.com

Revision: 28-Apr-11

[e-mail], [e-mail], [e-mail]

1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-MUR2020CTPbF

Vishay Semiconductors Ultrafast Rectifier, 2 x 10 A FRED Pt®

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

	PARAMETER	SYMBOL	TEST CONDITIONS		MIN.	TYP.	MAX.	UNITS
			IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V		-	-	35
	Reverse recovery time	trr	IF = 0.5 A, IR = 1.0 A, IREC = 0.25 A		-	-	25	ns
			TJ = 25 °C		-	21	-
			TJ = 125 °C	IF = 10 A	-	35	-
			TJ = 25 °C		-	1.9	-	A
	Peak recovery current	IRRM		dIF/dt = 200 A/μs
			TJ = 125 °C		-	4.8	-
				VR = 160 V
	Reverse recovery charge	Qrr	TJ = 25 °C		-	25	-	nC
			TJ = 125 °C		-	78	-

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER		SYMBOL	TEST CONDITIONS	MIN.	TYP.	MAX.	UNITS
Maximum junction and storage		TJ, TStg		- 65	-	175	°C
temperature range
Thermal resistance,	per leg	RthJC		-	-	2.5
junction to case	total device			-	-	1.25
Thermal resistance,		RthJA		-	-	50	°C/W
junction to ambient per leg
Thermal resistance,		RthCS	Mounting surface, flat, smooth and	-	0.5	-
case to heatsink			greased
Weight				-	2.0	-	g
				-	0.07	-	oz.
Mounting torque				6.0	-	12	kgf · cm
				(5.0)		(10)	(lbf · in)
Marking device			Case style TO-220AB		MUR2020CT

www.vishay.com	For technical questions within your region, please contact one of the following:	Document Number: 94079
2	[e-mail], [e-mail], [e-mail]	Revision: 28-Apr-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-MUR2020CTPbF

Ultrafast Rectifier, 2 x 10 A FRED Pt® Vishay Semiconductors

		100
<![if ! IE]> <![endif]>-Instantaneous	<![if ! IE]> <![endif]>Current (A)	10
					TJ = 175 °C
		1			TJ = 125 °C
<![if ! IE]> <![endif]>F	<![if ! IE]> <![endif]>Forward				TJ	= 25 °C
<![if ! IE]> <![endif]>I
		0.1
		0	0.4	0.8	1.2	1.6	2.0

	100	TJ = 175 °C
<![if ! IE]> <![endif]>(µA)	10			TJ = 150 °C
<![if ! IE]> <![endif]>Current	1		TJ = 125 °C
				TJ = 100 °C
<![if ! IE]> <![endif]>- Reverse
	0.1
	0.01
<![if ! IE]> <![endif]>R
<![if ! IE]> <![endif]>I				TJ = 25 °C
	0.001	50			200	250
	0		100	150

VFM - Forward Voltage Drop (V)	VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics	Fig. 2 - Typical Values of Reverse Current vs.
	Reverse Voltage

<![if ! IE]>

<![endif]>CT - Junction Capacitance (pF)

1000

100

TJ = 25 °C

10

0

10

100

1000

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

<![if ! IE]> <![endif]>(°C/W)	10
<![if ! IE]> <![endif]>Impedance	1
			D = 0.50		PDM
			D = 0.20		t1
<![if ! IE]> <![endif]>- Thermal
	0.1		D = 0.10		t2
			D = 0.05
		Single pulse
			D = 0.02	Notes:
		(thermal resistance)	D = 0.01
				1. Duty factor D = t1/t2 .
<![if ! IE]> <![endif]>thJC
				2. Peak TJ	= PDM x ZthJC	+ TC	.
<![if ! IE]> <![endif]>Z	0.01
	0.00001	0.0001	0.001	0.01	0.1		1

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics

Document Number: 94079	For technical questions within your region, please contact one of the following:	www.vishay.com
Revision: 28-Apr-11	[e-mail], [e-mail], [e-mail]	3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000