VISHAY MUR 1620CT VIS Datasheet

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Anode

13

2

Base

common

cathode

2

Common

cathode

Anode

TO-220AB

VS-MUR1620CTPbF, VS-MUR1620CT-N3

Vishay Semiconductors

Ultrafast Rectifier, 2 x 8 A FRED Pt

PRODUCT SUMMARY

Package TO-220AB

I

F(AV)

V

R

V

at I

F

F

t

typ. See Recovery table

rr

T

max. 175 °C

J

Diode variation Common cathode

2 x 8 A

200 V

0.975 V

®

FEATURES

• Ultrafast recovery time

• Low forward voltage drop

• 175 °C operating junction temperature

• Low leakage current

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified according to
JEDEC-JESD47

• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)

DESCRIPTION/APPLICATIONS

VS-MUR1620CTPbF is the state of the art ultrafast recovery
rectifier specifically designed with optimized performance of
forward voltage drop and ultrafast recovery time.

The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.

These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.

Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.

Revision: 11-Aug-11

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Peak repetitive reverse voltage V

Average rectified forward current

Non-repetitive peak surge current per leg I

Peak repetitive forward current per leg I

Operating junction and storage temperatures T

per leg

total device Rated V

RRM

I

F(AV)

FSM

, T

J

FM

, TC = 150 °C 16

R

Rated VR, square wave, 20 kHz, TC = 150 °C 16

Stg

200 V

8.0

100

- 65 to 175 °C

A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Breakdown voltage,
blocking voltage

Forward voltage V

Reverse leakage current I

Junction capacitance C

Series inductance L

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,

V

BR

V

R

IR = 100 μA 200 - -

R

IF = 8 A - - 0.975

F

I

= 8 A, TJ = 150 °C - - 0.895

F

VR = VR rated - - 5

T

= 150 °C, VR = VR rated - - 250

J

VR = 200 V - 25 - pF

T

Measured lead to lead 5 mm from package body - 8.0 - nH

S

1

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Document Number: 94078

V

μA

VS-MUR1620CTPbF, VS-MUR1620CT-N3

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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - - 35

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

rr

RRM

= 0.5 A, IR = 1.0 A, I

I

F

T

= 25 °C

J

T

= 125 °C - 34 -

J

TJ = 25 °C - 1.7 -

T

= 125 °C - 4.2 -

J

TJ = 25 °C - 23 -

rr

T

= 125 °C - 75 -

J

= 0.25 A - - 25

REC

= 8 A

I

F

/dt = 200 A/μs

dI

F

V

= 160 V

R

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Maximum junction and
storage temperature range

Thermal resistance,
junction to case per leg

Thermal resistance,
junction to ambient per leg

Thermal resistance,
case to heatsink

Weight

Mounting torque

Marking device Case style TO-220AB MUR1620CT

, T

T

J

Stg

R

--3.0

thJC

R

thJA

R

thCS

Mounting surface, flat, smooth and
greased

Vishay Semiconductors

-20-

- 65 - 175 °C

--50

-0.5-

-2.0- g

-0.07- oz.

6.0

(5.0)

-

12

(10)

ns

A

nC

°C/W

kgf · cm

(lbf · in)

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1

10

TJ = 175 °C
T

J

= 150 °C

T

J

= 25 °C

0 1.80.6 1.0

VF - Forward Voltage Drop (V)

I

F

- Instantaneous
Forward Current (A)

100

0.2 1.4

0.1

0.4 0.8 1.2 1.6

100

1000

1 10 100 1000

10

VR - Reverse Voltage (V)

C

T

- Junction Capacitance (pF)

TJ = 25 °C

0.01

0.1

10

0.00001 0.0001 0.001 0.01 0.1 1

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Impedance (°C/W)

.

.

P

DM

t

1

t

2

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

C

1

Single pulse

(thermal resistance)

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

VS-MUR1620CTPbF, VS-MUR1620CT-N3

Vishay Semiconductors

100

TJ = 175 °C

10

1

0.1

TJ = 150 °C

TJ = 125 °C

TJ = 100 °C

- Reverse Current (µA)

0.01

R

I

0.001
0 100 150

TJ = 25 °C

200 25050

VR - Reverse Voltage (V)

Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

Fig. 4 - Maximum Thermal Impedance Z

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thJC

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Characteristics

Document Number: 94078

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03

Allowable Case Temperature (°C)

I

F(AV)

- Average Forward Current (A)

160

170

180

See note (1)

150

DC

140

130

6912

Square wave (D = 0.50)
Rated V

R

applied

100 1000

t

rr

(ns)

dIF/dt (A/µs)

20

IF = 30 A
I

F

= 15 A

I

F

= 8 A

60

40

VR = 160 V
T

J

= 125 °C

T

J

= 25 °C

30

50

10

100 1000

Q

rr

(nC)

dIF/dt (A/µs)

40

IF = 30 A
I

F

= 15 A

I

F

= 8 A

200

120

VR = 160 V
T

J

= 125 °C

T

J

= 25 °C

80

160

0

VS-MUR1620CTPbF, VS-MUR1620CT-N3

Vishay Semiconductors

Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current

10

8

6

4

2

Average Power Loss (W)

0

0612

I

F(AV)

DC

39

- Average Forward Current (A)

Fig. 6 - Forward Power Loss Characteristics

Note

(1)

Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V

REV

x VFM at (I

F(AV)

REV

) x R

RMS limit

D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50

;

thJC

F(AV)

/D) (see fig. 6);

Fig. 7 - Typical Reverse Recovery Time vs. dI

Fig. 8 - Typical Stored Charge vs. dI

R

/dt

F

/dt

F

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Q

rr

0.5 I

RRM

dI

(rec)M

/dt

0.75 I

RRM

I

RRM

t

rr

t

b

t

a

I

F

dIF/dt

0

(1)

(2)

(3)

(4)

(5)

(1) dI

F

/dt - rate of change of current

through zero crossing

(2) I

RRM

- peak reverse recovery current

(3) t

rr

- reverse recovery time measured
from zero crossing point of negative
going I

F

to point where a line passing

through 0.75 I

RRM

and 0.50 I

RRM

extrapolated to zero current.

(4) Q

rr

- area under curve dened by t

rr

and I

RRM

trr x I

RRM

2

Q

rr

=

(5) dI

(rec)M

/dt - peak rate of change of

current during t

b

portion of t

rr

VS-MUR1620CTPbF, VS-MUR1620CT-N3

Vishay Semiconductors

= 200 V

V

R

0.01 Ω

L = 70 μH

D.U.T.

dIF/dt

adjust

G

D

IRFP250

S

Fig. 9 - Reverse Recovery Parameter Test Circuit

Revision: 11-Aug-11

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Fig. 10 - Reverse Recovery Waveform and Definitions

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Document Number: 94078

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2

- Ultrafast MUR series

1

- Vishay Semiconductors product

3

- Current rating (16 = 16 A)

4

- Voltage rating (20 = 200 V)

5

- CT = Center tap (dual)

6

Device code

51 32 4 6

VS- MUR 16 20 CT PbF

PbF = Lead (Pb)-free and RoHS compliant

- Environmental digit:

-N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free

ORDERING INFORMATION TABLE

VS-MUR1620CTPbF, VS-MUR1620CT-N3

Vishay Semiconductors

ORDERING INFORMATION (Example)

PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION

VS-MUR1620CTPbF 50 1000 Antistatic plastic tube

VS-MUR1620CT-N3 50 1000 Antistatic plastic tube

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95222

Part marking information

TO-220ABPbF www.vishay.com/doc?95225

TO-220AB-N3 www.vishay.com/doc?95028

Revision: 11-Aug-11

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Document Number: 94078

DIMENSIONS in millimeters and inches

13

2

D

D1

H1

Q

13

2

C

C

D

D

3 x b23 x b

(b, b2)

b1, b3

(H1)

D2

Detail B

C

A

B

L

e1

Lead tip

E

E2

Ø P

0.014 AB

M M

0.015 AB

MM

Seating

plane

c

A2

A1

A

A

A

Lead assignments

Diodes

1. - Anode/open

2. - Cathode

3. - Anode

Conforms to JEDEC outline TO-220AB

(6)

(6)

(7)

(6)

(7)

e

2 x

L1

(2)

Detail B

Section C - C and D - D

View A - A

Base metal Plating

(4)

(4)

c1

c

(6)

Thermal pad

(E)

E1

(6)

Outline Dimensions

Vishay Semiconductors

TO-220AB

SYMBOL

A 4.25 4.65 0.167 0.183 E 10.11 10.51 0.398 0.414 3, 6
A1 1.14 1.40 0.045 0.055 E1 6.86 8.89 0.270 0.350 6
A2 2.56 2.92 0.101 0.115 E2 - 0.76 - 0.030 7

b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105
b1 0.38 0.97 0.015 0.038 4 e1 4.88 5.28 0.192 0.208
b2 1.20 1.73 0.047 0.068 H1 6.09 6.48 0.240 0.255 6, 7
b3 1.14 1.73 0.045 0.068 4 L 13.52 14.02 0.532 0.552

MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

c 0.36 0.61 0.014 0.024 L1 3.32 3.82 0.131 0.150 2
c1 0.36 0.56 0.014 0.022 4 Ø P 3.54 3.73 0.139 0.147

D 14.85 15.25 0.585 0.600 3 Q 2.60 3.00 0.102 0.118
D1 8.38 9.02 0.330 0.355  90° to 93° 90° to 93°
D2 11.68 12.88 0.460 0.507 6

Notes

(1)

Dimensioning and tolerancing as per ASME Y14.5M-1994

(2)

Lead dimension and finish uncontrolled in L1

(3)

Dimension D, D1 and E do not include mold flash. Mold flash
shall not exceed 0.127 mm (0.005") per side. These dimensions
are measured at the outermost extremes of the plastic body

(4)

Dimension b1, b3 and c1 apply to base metal only

(5)

Controlling dimensions: inches

(6)

Thermal pad contour optional within dimensions E, H1, D2 and
E1

Document Number: 95222 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 08-Mar-11 [e-mail]

NOTES SYMBOL

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(7)

(8)

Dimensions E2 x H1 define a zone where stamping and
singulation irregularities are allowed
Outline conforms to JEDEC TO-220, except A2 (maximum) and
D2 (minimum) where dimensions are derived from the actual
package outline

MILLIMETERS INCHES

NOTES

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