Vishay MUR1620CTPBF Data Sheet

VS-MUR1620CTPbF

Vishay Semiconductors

Ultrafast Rectifier, 2 x 8 A FRED Pt®

		Base
		common
		cathode
		2
		2
		Common
TO-220AB	Anode	cathode	Anode
	1		3

PRODUCT SUMMARY

Package	TO-220AB
IF(AV)	2 x 8 A
VR	200 V
VF at IF	0.975 V
trr typ.	See Recovery table
TJ max.	175 °C
Diode variation	Common cathode

FEATURES

• Ultrafast recovery time

• Low forward voltage drop

• 175 °C operating junction temperature

• Low leakage current

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

DESCRIPTION/APPLICATIONS

VS-MUR1620CTPbF is the state of the art ultrafast recovery rectifier specifically designed with optimized performance of forward voltage drop and ultrafast recovery time.

The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics.

These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives.

Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.

ABSOLUTE MAXIMUM RATINGS

	PARAMETER		SYMBOL	TEST CONDITIONS	MAX.	UNITS
	Peak repetitive reverse voltage		VRRM		200	V
	Average rectified forward current	per leg	IF(AV)		8.0
		total device		Rated VR, TC = 150 °C	16	A
	Non-repetitive peak surge current per leg		IFSM		100
	Peak repetitive forward current per leg		IFM	Rated VR, square wave, 20 kHz, TC = 150 °C	16
	Operating junction and storage temperatures		TJ, TStg		- 65 to 175	°C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

	PARAMETER	SYMBOL	TEST CONDITIONS	MIN.	TYP.	MAX.	UNITS
	Breakdown voltage,	VBR,	IR = 100 μA	200	-	-
	blocking voltage	VR
							V
	Forward voltage	VF	IF = 8 A	-	-	0.975
			IF = 8 A, TJ = 150 °C	-	-	0.895
	Reverse leakage current	IR	VR = VR rated	-	-	5	μA
			TJ = 150 °C, VR = VR rated	-	-	250
	Junction capacitance	CT	VR = 200 V	-	25	-	pF
	Series inductance	LS	Measured lead to lead 5 mm from package body	-	8.0	-	nH

Document Number: 94078	For technical questions within your region, please contact one of the following:	www.vishay.com
Revision: 28-Apr-11	[e-mail], [e-mail], [e-mail]	1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-MUR1620CTPbF

Vishay Semiconductors Ultrafast Rectifier, 2 x 8 A FRED Pt®

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

	PARAMETER	SYMBOL	TEST CONDITIONS		MIN.	TYP.	MAX.	UNITS
			IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V		-	-	35
	Reverse recovery time	trr	IF = 0.5 A, IR = 1.0 A, IREC = 0.25 A		-	-	25	ns
			TJ = 25 °C		-	20	-
			TJ = 125 °C		-	34	-
				IF = 8 A
			TJ = 25 °C		-	1.7	-
	Peak recovery current	IRRM		dIF/dt = 200 A/μs				A
			TJ = 125 °C		-	4.2	-
				VR = 160 V
	Reverse recovery charge	Qrr	TJ = 25 °C		-	23	-	nC
			TJ = 125 °C		-	75	-

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER	SYMBOL	TEST CONDITIONS	MIN.	TYP.	MAX.	UNITS
Maximum junction and	TJ, TStg		- 65	-	175	°C
storage temperature range
Thermal resistance,	RthJC		-	-	3.0
junction to case per leg
Thermal resistance,	RthJA		-	-	50	°C/W
junction to ambient per leg
Thermal resistance,	RthCS	Mounting surface, flat, smooth and	-	0.5	-
case to heatsink		greased
Weight			-	2.0	-	g
			-	0.07	-	oz.
Mounting torque			6.0	-	12	kgf · cm
			(5.0)		(10)	(lbf · in)
Marking device		Case style TO-220AB		MUR1620CT

www.vishay.com	For technical questions within your region, please contact one of the following:	Document Number: 94078
2	[e-mail], [e-mail], [e-mail]	Revision: 28-Apr-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-MUR1620CTPbF

Ultrafast Rectifier, 2 x 8 A FRED Pt® Vishay Semiconductors

<![if ! IE]> <![endif]>Instantaneous	<![if ! IE]> <![endif]>Current (A)
<![if ! IE]> <![endif]>I	<![if ! IE]> <![endif]>Forward
<![if ! IE]> <![endif]>-
<![if ! IE]> <![endif]>F

100

10

1

0.1

										100
									<![if ! IE]> <![endif]>(µA)			TJ = 175 °C
										10		TJ = 150 °C
									<![if ! IE]> <![endif]>Current	1			TJ = 125 °C
						TJ = 175 °C			<![if ! IE]> <![endif]>Reverse-				TJ = 100 °C
										0.1
						TJ = 150 °C
						TJ = 25 °C
									<![if ! IE]> <![endif]>R	0.01		TJ = 25 °C
									<![if ! IE]> <![endif]>I
										0.001	50			200	250
0	0.2	0.4	0.6	0.8	1.0	1.2	1.4	1.6	1.8	0		100	150

VF - Forward Voltage Drop (V)	VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics	Fig. 2 - Typical Values of Reverse Current vs.
	Reverse Voltage

<![if ! IE]>

<![endif]>CT - Junction Capacitance (pF)

1000

100

TJ = 25 °C

10

1

10

100

1000

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

<![if ! IE]> <![endif]>(°C/W)	10
<![if ! IE]> <![endif]>Impedance	1
					PDM
			D = 0.50
<![if ! IE]> <![endif]>Thermal					t1
			D = 0.20
	0.1				t2
			D = 0.10
		Single pulse	D = 0.05		Notes:
<![if ! IE]> <![endif]>-			D = 0.02
		(thermal resistance)
<![if ! IE]> <![endif]>thJC					1. Duty factor D = t1/t2 .
			D = 0.01
					2. Peak TJ = PDM x ZthJC	+ TC	.
<![if ! IE]> <![endif]>Z	0.01
	0.00001	0.0001	0.001	0.01	0.1		1

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics

Document Number: 94078	For technical questions within your region, please contact one of the following:	www.vishay.com
Revision: 28-Apr-11	[e-mail], [e-mail], [e-mail]	3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000