Vishay MUR1520PBF Data Sheet

VS-MUR1520PbF

Vishay Semiconductors

Ultrafast Rectifier, 15 A FRED Pt®

Base
cathode
2
1	3

FEATURES

•Ultrafast recovery time

•Low forward voltage drop

•175 °C operating junction temperature

•Low leakage current

•Compliant to RoHS Directive 2002/95/EC

Cathode Anode

TO-220AC

PRODUCT SUMMARY

Package	TO-220AC
IF(AV)	15 A
VR	200 V
VF at IF	1.05 V
trr typ.	See Recovery table
TJ max.	175 °C
Diode variation	Single die

• Designed and qualified for industrial level

DESCRIPTION/APPLICATIONS

VS-MUR1520PbF is the state of the art ultrafast recovery rectifier specifically designed with optimized performance of forward voltage drop and ultrafast recovery time.

The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics.

These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives.

Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.

ABSOLUTE MAXIMUM RATINGS

PARAMETER	SYMBOL	TEST CONDITIONS	MAX.	UNITS
Peak repetitive reverse voltage	VRRM		200	V
Average rectified forward current	IF(AV)	Total device, rated VR, TC = 150 °C	15
Non-repetitive peak surge current	IFSM		200	A
Peak repetitive forward current	IFM	Rated VR, square wave, 20 kHz, TC = 150 °C	30
Operating junction and storage temperatures	TJ, TStg		- 65 to 175	°C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

	PARAMETER	SYMBOL	TEST CONDITIONS	MIN.	TYP.	MAX.	UNITS
	Breakdown voltage,	VBR,	IR = 100 μA	200	-	-
	blocking voltage	VR
							V
	Forward voltage	VF	IF = 15 A	-	-	1.05
			IF = 15 A, TJ = 150 °C	-	-	0.85
	Reverse leakage current	IR	VR = VR rated	-	-	10	μA
			TJ = 150 °C, VR = VR rated	-	-	500
	Junction capacitance	CT	VR = 200 V	-	55	-	pF
	Series inductance	LS	Measured lead to lead 5 mm from package body	-	8.0	-	nH

Document Number: 94077	For technical questions within your region, please contact one of the following:	www.vishay.com
Revision: 28-Apr-11	[e-mail], [e-mail], [e-mail]	1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-MUR1520PbF

Vishay Semiconductors Ultrafast Rectifier, 15 A FRED Pt®

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

	PARAMETER	SYMBOL	TEST CONDITIONS		MIN.	TYP.	MAX.	UNITS
			IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V		-	-	35
	Reverse recovery time	trr	TJ = 25 °C		-	22	-	ns
			TJ = 125 °C		-	39	-
				IF = 15 A
			TJ = 25 °C		-	1.6	-	A
	Peak recovery current	IRRM		dIF/dt = 200 A/μs
			TJ = 125 °C		-	4.1	-
				VR = 160 V
	Reverse recovery charge	Qrr	TJ = 25 °C		-	19	-	nC
			TJ = 125 °C		-	90	-

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER	SYMBOL	TEST CONDITIONS	MIN.	TYP.	MAX.	UNITS
Maximum junction and	TJ, TStg		- 65	-	175	°C
storage temperature range
Thermal resistance,	RthJC		-	-	1.5
junction to case
Thermal resistance,	RthJA		-	-	50	°C/W
junction to ambient
Thermal resistance,	RthCS	Mounting surface, flat, smooth and	-	0.5	-
case to heatsink		greased
Weight			-	2.0	-	g
			-	0.07	-	oz.
Mounting torque			6.0	-	12	kgf · cm
			(5.0)		(10)	(lbf · in)
Marking device		Case style TO-220AC		MUR1520

www.vishay.com	For technical questions within your region, please contact one of the following:	Document Number: 94077
2	[e-mail], [e-mail], [e-mail]	Revision: 28-Apr-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-MUR1520PbF

Ultrafast Rectifier, 15 A FRED Pt® Vishay Semiconductors

<![if ! IE]> <![endif]>Instantaneous	<![if ! IE]> <![endif]>Current (A)
<![if ! IE]> <![endif]>I	<![if ! IE]> <![endif]>Forward
<![if ! IE]> <![endif]>-
<![if ! IE]> <![endif]>F

100

10

1

0.1

						1000
					<![if ! IE]> <![endif]>(µA)			TJ = 175 °C
						100		TJ = 150 °C
					<![if ! IE]> <![endif]>Current	TJ	= 125 °C
					<![if ! IE]> <![endif]>Reverse-	10
			TJ = 175 °C			1			TJ = 100 °C
			TJ = 150 °C
			TJ = 25 °C
					<![if ! IE]> <![endif]>R	0.1		TJ = 25 °C
					<![if ! IE]> <![endif]>I
						0.01
0	0.3	0.6	0.9	1.2	1.5	0	50	100	150	200	250

VF - Forward Voltage Drop (V)	VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics	Fig. 2 - Typical Values of Reverse Current vs.
	Reverse Voltage

<![if ! IE]>

<![endif]>CT - Junction Capacitance (pF)

1000

TJ = 25 °C

100

10

0

10

100

1000

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

<![if ! IE]> <![endif]>(°C/W)	10
<![if ! IE]> <![endif]>Impedance	1
					PDM
<![if ! IE]> <![endif]>- Thermal				D = 0.50	t1
	0.1			D = 0.20	t2
				D = 0.10	Notes:
				D = 0.05
<![if ! IE]> <![endif]>thJC		Single pulse		D = 0.02	1. Duty factor D = t1/t2 .
		(thermal resistance)		D = 0.01	2. Peak TJ = PDM x ZthJC	+ TC	.
<![if ! IE]> <![endif]>Z	0.01
	0.00001	0.0001	0.001	0.01	0.1		1

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics

Document Number: 94077	For technical questions within your region, please contact one of the following:	www.vishay.com
Revision: 28-Apr-11	[e-mail], [e-mail], [e-mail]	3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000