Vishay MUR1020CTPBF Data Sheet
VS-MUR1020CTPbF
TO-220AB
Vishay Semiconductors
Ultrafast Rectifier, 10 A FRED Pt
Anode
PRODUCT SUMMARY
Package TO-220AB
I
F(AV)
V
R
V
at I
F
F
t
typ. See Recovery table
rr
T
max. 175 °C
J
Diode variation Common cathode
See Electrical table
Base
common
cathode
2
2
Common
cathode
13
Anode
2 x 5 A
200 V
®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
VS-MUR.. series are the state of the art ultrafast recovery
rectifiers specifically designed with optimized performance
of forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output
rectification stage of SMPS, UPS, DC/DC converters as well
as freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage V
Average rectified forward current
per leg
total device Rated V
Non-repetitive peak surge current per leg I
Peak repetitive forward current per leg I
Operating junction and storage temperatures T
RRM
I
F(AV)
FSM
, T
J
FM
Stg
, TC = 149 °C 10
R
Rated VR, square wave, 20 kHz
T
= 149 °C
C
200 V
5
50
10
- 65 to 175 °C
A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
,
V
BR
V
R
IR = 100 μA 200 - -
R
IF = 5 A, TJ = 125 °C - 0.87 0.99
F
F
I
= 10 A - 1.12 1.25
F
= 10 A, TJ = 125 °C - 1.02 1.20
I
VR = VR rated - - 10
T
= 150 °C, VR = VR rated - - 250
J
VR = 200 V - 8 - pF
T
Measured lead to lead 5 mm from package body - 8.0 - nH
S
V
μA
Document Number: 94076 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 28-Apr-11 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MUR1020CTPbF
Vishay Semiconductors
Ultrafast Rectifier, 10 A FRED Pt
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - - 35
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
= 0.5 A, IR = 1.0 A, I
I
F
T
= 25 °C
J
= 125 °C - 35 -
T
J
TJ = 25 °C - 3.3 -
T
= 125 °C - 5.0 -
J
TJ = 25 °C - 33 -
rr
T
= 125 °C - 76 -
J
= 0.25 A - - 25
REC
I
= 5 A
F
/dt = 200 A/μs
dI
F
= 160 V
V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and
storage temperature range
Thermal resistance,
junction to case per leg
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device Case style TO-220AB MUR1020CT
T
, T
J
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, flat, smooth
and greased
®
-24-
- 65 - 175 °C
--5
--50
-0.5-
-2.0- g
-0.07- oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
ns
A
nC
°C/W
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94076
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 28-Apr-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Ultrafast Rectifier, 10 A FRED Pt
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VF - Forward Voltage Drop (V)
I
F
- Instantaneous
Forward Current (A)
0.1
TJ = 175 °C
T
J
= 125 °C
T
J
= 25 °C
100
TJ = 175 °C
10
1
TJ = 125 °C
VS-MUR1020CTPbF
®
Vishay Semiconductors
TJ = 150 °C
0.1
0.01
- Reverse Current (µA)
R
I
0.001
0.0001
0 8040 120 160 200
TJ = 25 °C
TJ = 100 °C
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
100
TJ = 25 °C
10
- Junction Capacitance (pF)
T
C
1
1 10 100 1000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.1
Thermal Impedance (°C/W)
-
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1
Document Number: 94076 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 28-Apr-11 DiodesAmericas@vishay.com
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
This datasheet is subject to change without notice.
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
Characteristics
thJC
P
DM
t
1
t
2
.
1/t2
+ T
thJC
C
.
1
www.vishay.com/doc?91000
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