Vishay MMBZ4681-V, MMBZ4682-V, MMBZ4683-V, MMBZ4684-V, MMBZ4685-V Schematic [ru]

...
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Small Signal Zener Diodes
3
12
PRIMARY CHARACTERISTICS
PARAMETER VALUE UNIT
range nom. 2.4 to 43 V
V
Z
Test current I
specification Pulse current
V
Z
Int. construction Single
0.05 mA
ZT
MMBZ4681-V to MMBZ4717-V
Vishay Semiconductors
FEATURES
• Silicon planar Zener diodes
• Standard Zener voltage tolerance is ± 5 %. Other tolerances are available upon request
• These diodes are also available in DO-35 case with the type designation 1N4681 to 1N4717 and SOD-123 case with the type designation MMSZ4681-V to MMSZ4717-V
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
ORDERING INFORMATION
DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
MMBZ4681-V to MMBZ4717-V
MMBZ4681-V to MMBZ4717-V
MMBZ4681-V to
MMBZ4717-V-series-GS18
MMBZ4817-V to
MMBZ4717-V-series-GS08
10 000 (8 mm tape on 13" reel) 10 000/box
3000 (8 mm tape on 7" reel) 15 000/box
PACKAGE
PACKAGE NAME WEIGHT
SOT-23 8.8 mg UL 94 V-0
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Power dissipation
Zener current See table “Characteristics”
Junction to ambient air
Junction temperature, maximum
Storage temperature range
On FR - 5 board using recommended solder pad
On FR - 5 board using recommended solder pad
MOLDING COMPOUND
FLAMMABILITY RATING
= 25 °C, unless otherwise specified)
amb
layout
layout
MOISTURE SENSITIVITY
LEVEL
MSL level 1
(according J-STD-020)
P
tot
R
thJA
T
j
T
stg
- 55 to + 150 °C
SOLDERING
CONDITIONS
260 °C/10 s at terminals
350 mW
420 K/W
150 °C
Rev. 1.7, 29-Nov-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
Document Number: 85771
www.vishay.com
MMBZ4681-V to MMBZ4717-V
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (T
ZENER VOLTAGE RANGE
PART NUMBER
MARKING
CODE
= 25 °C, unless otherwise specified)
amb
TEST
CURRENT
I
ZT1
REVERSE CURRENT
IR at V
R
VZ at I
(1)
ZT1
V mA μA V V
VOLTAGE
CHANGE
MIN. NOM. MAX. MAX. MAX.
MMBZ4681-V CF 2.28 2.4 2.52 0.05 2 1 0.8
MMBZ4682-V CH 2.57 2.7 2.84 0.05 1 1 0.85
MMBZ4683-V CJ 2.85 3 3.15 0.05 0.8 1 0.9
MMBZ4684-V CK 3.14 3.3 3.47 0.05 7.5 1.5 0.95
MMBZ4685-V CM 3.42 3.6 3.78 0.05 7.5 2 0.95
MMBZ4686-V CN 3.71 3.9 4.1 0.05 5 2 0.97
MMBZ4687-V CP 4.09 4.3 4.52 0.05 4 2 0.99
MMBZ4688-V CT 4.47 4.7 4.94 0.05 10 3 0.99
MMBZ4689-V CU 4.85 5.1 5.36 0.05 10 3 0.97
MMBZ4690-V CV 5.32 5.6 5.88 0.05 10 4 0.96
MMBZ4691-V CA 5.89 6.2 6.51 0.05 10 5 0.95
MMBZ4692-V CX 6.46 6.8 7.14 0.05 10 5.1 0.9
MMBZ4693-V CY 7.13 7.5 7.88 0.05 10 5.7 0.75
MMBZ4694-V CZ 7.79 8.2 8.61 0.05 1 6.2 0.5
MMBZ4695-V DC 8.27 8.7 9.14 0.05 1 6.6 0.1
MMBZ4696-V DD 8.65 9.1 9.56 0.05 1 6.9 0.08
MMBZ4697-V DE 9.5 10 10.5 0.05 1 7.6 0.1
MMBZ4698-V DF 10.5 11 11.6 0.05 0.05 8.4 0.11
MMBZ4699-V DH 11.4 12 12.6 0.05 0.05 9.1 0.12
MMBZ4700-V DJ 12.4 13 13.7 0.05 0.05 9.8 0.13
MMBZ4701-V DK 13.3 14 14.7 0.05 0.05 10.6 0.14
MMBZ4702-V DM 14.3 15 15.8 0.05 0.05 11.4 0.15
MMBZ4703-V DN 15.2 16 16.8 0.05 0.05 12.1 0.16
MMBZ4704-V DP 16.2 17 17.9 0.05 0.05 12.9 0.17
MMBZ4705-V DT 17.1 18 18.9 0.05 0.05 13.6 0.18
MMBZ4706-V DU 18.1 19 20 0.05 0.05 14.4 0.19
MMBZ4707-V DV 19 20 21 0.05 0.01 15.2 0.2
MMBZ4708-V DA 20.9 22 23.1 0.05 0.01 16.7 0.22
MMBZ4709-V DZ 22.8 24 25.2 0.05 0.01 18.2 0.24
MMBZ4710-V DY 23.8 25 26.3 0.05 0.01 19 0.25
MMBZ4711-V EA 25.7 27 28.4 0.05 0.01 20.4 0.27
MMBZ4712-V EC 26.6 28 29.4 0.05 0.01 21.2 0.28
MMBZ4713-V ED 28.5 30 31.5 0.05 0.01 22.8 0.3
MMBZ4714-V EE 31.4 33 34.7 0.05 0.01 25 0.33
MMBZ4715-V EF 34.2 36 3.7.8 0.05 0.01 27.3 0.36
MMBZ4716-V EH 37.1 39 41 0.05 0.01 29.6 0.39
MMBZ4717-V EJ 40.9 43 45.2 0.05 0.01 32.6 0.43
Notes
Maximum V
(1)
Tested with pulse test current
(2)
Maximum voltage change (VZ). Voltage change is equal to the difference between VZ at 100 μA and VZ at 10 μA.
= 0.9 V, at IF = 10 mA
F
V
(2)
Z
Rev. 1.7, 29-Nov-11
For technical questions within your region: DiodesAmericas@vishay.com
2
Document Number: 85771
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
0 120 160
0
100
300
400
500
600
P
tot
- Total Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
200
95 9602
200
80
40
10 15 20
1
10
100
1000
V
Z
- Voltage Change (mV)
VZ - Z-Voltage (V)
25
95 9598
Tj = 25 °C
I
Z
= 5 mA
0
5
MMBZ4681-V to MMBZ4717-V
Vishay Semiconductors
BASIC CHARACTERISTICS (T
= 25 °C, unless otherwise specified)
amb
Fig. 1 - Total Power Dissipation vs. Ambient Temperature
15
10
/K)
-4
5
(10
Z
of V
0
- Temperature Coefficient
VZ
IZ = 5 mA
TK
- 5
0 1020304050
95 9600
VZ - Z-Voltage (V)
Fig. 4 - Temperature Coefficient of V
100
10
1
Tj = 25 °C
vs. Z-Voltage
Z
Fig. 2 - Typical Change of Working Voltage under Operating
Rev. 1.7, 29-Nov-11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Conditions at T
1.3
V
= VZt/VZ (25 °C)
Ztn
1.2
1.1
1.0
0.9
- Relative Voltage Change
Ztn
V
0.8
95 9599
0
- 60 60 120 180
Tj - Junction Temperature (°C)
amb
TK
VZ
= 25 °C
= 10 x 10-4/K
8 x 10 6 x 10
4 x 10
2 x 10
0
- 2 x 10-4/K
- 4 x 10-4/K
-4
-4
-4
-4
/K /K
/K
/K
240
Fig. 3 - Typical Change of Working Voltage vs.
Junction Temperature
3
For technical questions within your region: DiodesAmericas@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
0.1
- Forward Current (mA)
0.01
F
I
0.001 0 0.2 0.4 0.6 0.8
95 9605
VF - Forward Voltage (V)
1.0
Fig. 5 - Forward Current vs. Forward Voltage
100
80
60
40
- Z-Current (mA)
Z
I
20
0
046
95 9604
VZ - Z-Voltage (V)
P
T
8
= 500 mW
tot
= 25 °C
amb
12
20
Fig. 6 - Z-Current vs. Z-Voltage
Document Number: 85771
www.vishay.com
15 20 25 30
0
10
20
30
40
50
I
Z
- Z-Current (mA)
VZ - Z-Voltage (V)
35
95 9607
P
tot
= 500 mW
T
amb
= 25 °C
Foot print recommendation:
Rev. 8 - Date: 23.Sept.2009 17418
Document no.: 6.541-5014.01-4
0.9 (0.035)
1 (0.039)
0.9 (0.035)
1 (0.039)
1.43 (0.056)
0.45 (0.018)
0.35 (0.014)
2.8 (0.110)
3.1 (0.122)
0.45 (0.018)
0.35 (0.014)
0.45 (0.018)
0.35 (0.014)
0.1 (0.004) max.
2.35 (0.093)
2.6 (0.102)
0.175 (0.007)
0.098 (0.004)
1.15 (0.045)
0.9 (0.035)
1.20 (0.047)
0.95 (0.037) 0.95 (0.037)
2 (0.079)
0.7 (0.028)
0.9 (0.035)
0° to 8°
0.2 (0.008)
0.3 (0.012)
0.5 (0.020)
0.550 ref. (0.022 ref.)
Fig. 7 - Z-Current vs. Z-Voltage Fig. 8 - Differential Z-Resistance vs. Z-Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOT-23
MMBZ4681-V to MMBZ4717-V
Vishay Semiconductors
1000
IZ = 1 mA
100
5 mA
10 mA
10
- Differential Z-Resistance (Ω)
Z
r
1
95 9606
5
0 101520
VZ - Z-Voltage (V)
Tj = 25 °C
25
Rev. 1.7, 29-Nov-11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: DiodesAmericas@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4
Document Number: 85771
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Disclaimer

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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000
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