VISHAY MCT6H, MCT62H User Manual

MCT6H / MCT62H

Vishay Semiconductors

Optocoupler, Phototransistor Output, Dual Channel

Features

8

76

5

• Current Transfer Ratio (CTR) of typical 100 %

• Isolation test voltage V

= 5000 V

ISO

RMS

• Low temperature coefficient of CTR

• Low coupling capacitance of typical 0.3 pF

• Wide ambient temperature range

• Lead-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

1234

17202_1

Description

The MCT6H and MCT62H consist of a phototransis­tor optically coupled to a gallium arsenide infrared­emitting diode in a 6-lead plastic dual inline package.

C

e3

Pb

Pb-free

The elements are mounted on one leadframe, provid-

Agency Approvals

• UL1577, File No. E76222 System Code U, Double

ing a fixed distance between input and output for high­est safety requirements.

Protection

Order Information

Applications

Galvanically separated circuits
Non-interacting switches

MCT6H CTR > 50 %, DIP-8

MCT62H CTR > 100 %, DIP-8

For additional information on the available options refer to
Option Information.

Part Remarks

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Parameter Test condition Symbol Val ue Unit

Reverse voltage V

Forward current I

Forward surge current t

Power dissipation P

Junction temperature T

≤ 10 µsI

p

Output

Parameter Test condition Symbol Val ue Unit

Collector emitter voltage V

Emitter collector voltage V

Collector current I

Collector peak current t

Power dissipation P

Junction temperature T

Document Number 83525

Rev. 1.4, 26-Oct-04

/T = 0.5, tp ≤ 10 ms I

p

F

FSM

diss

CEO

ECO

C

CM

diss

R

j

j

6V

60 mA

1.5 A

100 mW

125 °C

70 V

7V

50 mA

100 mA

150 mW

125 °C

www.vishay.com

1

MCT6H / MCT62H

Vishay Semiconductors

Coupler

Parame te r Test condition Symbol Value Unit

AC isolation test voltage (RMS) t = 1 min

Total power dissipation P

Ambient temperature range T

Storage temperature range T

Soldering temperature 2 mm from case, t ≤ 10 s T

1)

Related to standard climate 23/50 DIN 50014

1)

V

ISO

tot

amb

stg

sld

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Parame te r Test condition Symbol Min Ty p. Max Unit

Forward voltage I

= 50 mA V

F

F

5000 V

RMS

250 mW

- 40 to + 100 °C

- 55 to + 125 °C

260 °C

1.25 1.6 V

Output

Parame te r Test condition Symbol Min Ty p. Max Unit

Collector emitter voltage I

Emitter collector voltage I

Collector dark current V

= 1 mA V

C

= 100 µAV

E

= 20 V, IF = 0, E = 0 I

CE

Coupler

Parame te r Test condition Symbol Min Ty p. Max Unit

DC isolation test voltage t = 2 s

Isolation resistance VIO = 1000 V, 40 % relative

humidity

Collector emitter saturation
voltage

Cut-off frequency I

= 10 mA, IC = 1 mA V

I

F

= 10 mA, VCE = 5 V,

F

R

= 100 Ω

L

Coupling capacitance f = 1 MHz C

1)

Related to standard climate 23/50 DIN 50014

Current Transfer Ratio

Parame te r Test condition Par t Symbol Min Ty p. Max Unit

I

C/IF

VCE = 5 V, IF = 5 mA MCT6H CTR 50 100 %

V

= 5 V, IF = 10 mA MCT6H CTR 60 120 %

CE

V

= 5 V, IF = 5 mA MCT62H CTR 100 200 %

CE

V

R

CEO

ECO

CEO

ISO

IO

CEsat

f

C

k

70 V

7V

100 nA

1)

1)

5000 V

12

10

RMS

Ω

0.3 V

100 kHz

0.3 pF

www.vishay.com

2

Document Number 83525

Rev. 1.4, 26-Oct-04

Switching Characteristics

Parameter Test condition Symbol Min Ty p . Max Unit

Delay time V

Rise time V

Fall time V

Storage time V

Turn-on time V

Turn-off time V

= 5 V, IC = 2 mA, RL = 100 Ω

S

(see figure 1)

= 5 V, IC = 2 mA, RL = 100 Ω

S

(see figure 1)

= 5 V, IC = 2 mA, RL = 100 Ω

S

(see figure 1)

= 5 V, IC = 2 mA, RL = 100 Ω

S

(see figure 1)

= 5 V, IC = 2 mA, RL = 100 Ω

S

(see figure 1)

= 5 V, IC = 2 mA, RL = 100 Ω

S

(see figure 1)

MCT6H / MCT62H

Vishay Semiconductors

t

d

t

r

t

f

t

s

t

on

t

off

3.0 µs

3.0 µs

4.7 µs

0.3 µs

6.0 µs

5.0 µs

I

F

+ 5 V

IC = 2 mA;

Channel I

Channel II

95 10804

I

0

RG = 50 W
t

p

= 0.01

T

tp = 50 Ps

I

F

F

50 W 100 W

Figure 1. Test circuit, non-saturated operation

adjusted through
input amplitude

Oscilloscope
R

= 1 MW

L

= 20 pF

C

L

0

I

C

100%

90%

10%

0

t

d

t

t

p

t

d

t

r

t

(= td+tr) turn-on time

on

on

pulse duration
delay time
rise time

t

p

t

r

t

s

t

s

t

f

t

(= ts+tf) turn-off time

off

Figure 2. Switching Times

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

300

Coupled device

250

200

Phototransistor

150

IR-diode

100

50

tot

P –Total Power Dissipation ( mW)

0

0 40 80 120

T

96 11700

– Ambient Temperature(°C )

amb

1000

100

10

1

F

I - Forward Current ( mA )

0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

96 11862

VF- Forward Voltage(V)

96 11698

t

t

f

t

off

t

storage time
fall time

Figure 3. Total Power Dissipation vs. Ambient Temperature

Document Number 83525

Rev. 1.4, 26-Oct-04

Figure 4. Forward Current vs. Forward Voltage

www.vishay.com

3