MCT6H / MCT62H
Vishay Semiconductors
Optocoupler, Phototransistor Output, Dual Channel
Features
8
76
5
• Current Transfer Ratio (CTR) of typical 100 %
• Isolation test voltage V
= 5000 V
ISO
RMS
• Low temperature coefficient of CTR
• Low coupling capacitance of typical 0.3 pF
• Wide ambient temperature range
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
1234
17202_1
Description
The MCT6H and MCT62H consist of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package.
C
e3
Pb
Pb-free
The elements are mounted on one leadframe, provid-
Agency Approvals
• UL1577, File No. E76222 System Code U, Double
ing a fixed distance between input and output for highest safety requirements.
Protection
Order Information
Applications
Galvanically separated circuits
Non-interacting switches
MCT6H CTR > 50 %, DIP-8
MCT62H CTR > 100 %, DIP-8
For additional information on the available options refer to
Option Information.
Part Remarks
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Test condition Symbol Val ue Unit
Reverse voltage V
Forward current I
Forward surge current t
Power dissipation P
Junction temperature T
≤ 10 µsI
p
Output
Parameter Test condition Symbol Val ue Unit
Collector emitter voltage V
Emitter collector voltage V
Collector current I
Collector peak current t
Power dissipation P
Junction temperature T
Document Number 83525
Rev. 1.4, 26-Oct-04
/T = 0.5, tp ≤ 10 ms I
p
F
FSM
diss
CEO
ECO
C
CM
diss
R
j
j
6V
60 mA
1.5 A
100 mW
125 °C
70 V
7V
50 mA
100 mA
150 mW
125 °C
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1
MCT6H / MCT62H
Vishay Semiconductors
Coupler
Parame te r Test condition Symbol Value Unit
AC isolation test voltage (RMS) t = 1 min
Total power dissipation P
Ambient temperature range T
Storage temperature range T
Soldering temperature 2 mm from case, t ≤ 10 s T
1)
Related to standard climate 23/50 DIN 50014
1)
V
ISO
tot
amb
stg
sld
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parame te r Test condition Symbol Min Ty p. Max Unit
Forward voltage I
= 50 mA V
F
F
5000 V
RMS
250 mW
- 40 to + 100 °C
- 55 to + 125 °C
260 °C
1.25 1.6 V
Output
Parame te r Test condition Symbol Min Ty p. Max Unit
Collector emitter voltage I
Emitter collector voltage I
Collector dark current V
= 1 mA V
C
= 100 µAV
E
= 20 V, IF = 0, E = 0 I
CE
Coupler
Parame te r Test condition Symbol Min Ty p. Max Unit
DC isolation test voltage t = 2 s
Isolation resistance VIO = 1000 V, 40 % relative
humidity
Collector emitter saturation
voltage
Cut-off frequency I
= 10 mA, IC = 1 mA V
I
F
= 10 mA, VCE = 5 V,
F
R
= 100 Ω
L
Coupling capacitance f = 1 MHz C
1)
Related to standard climate 23/50 DIN 50014
Current Transfer Ratio
Parame te r Test condition Par t Symbol Min Ty p. Max Unit
I
C/IF
VCE = 5 V, IF = 5 mA MCT6H CTR 50 100 %
V
= 5 V, IF = 10 mA MCT6H CTR 60 120 %
CE
V
= 5 V, IF = 5 mA MCT62H CTR 100 200 %
CE
V
R
CEO
ECO
CEO
ISO
IO
CEsat
f
C
k
70 V
7V
100 nA
1)
1)
5000 V
12
10
RMS
Ω
0.3 V
100 kHz
0.3 pF
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2
Document Number 83525
Rev. 1.4, 26-Oct-04
Switching Characteristics
Parameter Test condition Symbol Min Ty p . Max Unit
Delay time V
Rise time V
Fall time V
Storage time V
Turn-on time V
Turn-off time V
= 5 V, IC = 2 mA, RL = 100 Ω
S
(see figure 1)
= 5 V, IC = 2 mA, RL = 100 Ω
S
(see figure 1)
= 5 V, IC = 2 mA, RL = 100 Ω
S
(see figure 1)
= 5 V, IC = 2 mA, RL = 100 Ω
S
(see figure 1)
= 5 V, IC = 2 mA, RL = 100 Ω
S
(see figure 1)
= 5 V, IC = 2 mA, RL = 100 Ω
S
(see figure 1)
MCT6H / MCT62H
Vishay Semiconductors
t
d
t
r
t
f
t
s
t
on
t
off
3.0 µs
3.0 µs
4.7 µs
0.3 µs
6.0 µs
5.0 µs
I
F
+ 5 V
IC = 2 mA;
Channel I
Channel II
95 10804
I
0
RG = 50 W
t
p
= 0.01
T
tp = 50 Ps
I
F
F
50 W 100 W
Figure 1. Test circuit, non-saturated operation
adjusted through
input amplitude
Oscilloscope
R
= 1 MW
L
= 20 pF
C
L
0
I
C
100%
90%
10%
0
t
d
t
t
p
t
d
t
r
t
(= td+tr) turn-on time
on
on
pulse duration
delay time
rise time
t
p
t
r
t
s
t
s
t
f
t
(= ts+tf) turn-off time
off
Figure 2. Switching Times
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
300
Coupled device
250
200
Phototransistor
150
IR-diode
100
50
tot
P –Total Power Dissipation ( mW)
0
0 40 80 120
T
96 11700
– Ambient Temperature(°C )
amb
1000
100
10
1
F
I - Forward Current ( mA )
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
96 11862
VF- Forward Voltage(V)
96 11698
t
t
f
t
off
t
storage time
fall time
Figure 3. Total Power Dissipation vs. Ambient Temperature
Document Number 83525
Rev. 1.4, 26-Oct-04
Figure 4. Forward Current vs. Forward Voltage
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3
MCT6H / MCT62H
Vishay Semiconductors
1.5
VCE=5V
1.4
I
=5mA
F
1.3
1.2
1.1
1.0
0.9
0.8
0.7
rel
0.6
0.5
CTR – Relative Current Transfer Ratio
–30–20–100 1020304050607080
T
96 11927
– Ambient Temperature (°C )
amb
Figure 5. Relative Current Transfer Ratio vs. Ambient
Temperature
10000
VCE=20V
I
=0
1000
with open Base ( nA )
CEO
I – Collector Dark Current,
96 11928
F
100
10
1
0 102030405060708090100
T
– Ambient Temperature (°C )
amb
100.0
10.0
1.0
C
I – Collector Current ( mA )
0.1
0.1 1.0 10.0 100.0
96 11930
VCE – Collector Emitter Voltage ( V )
IF=50mA
20mA
10mA
5mA
2mA
1mA
Figure 8. Collector Current vs. Collector Emitter Voltage
1.0
0.9
CTR=50%
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1 10 100
CEsat
V – Collector Emitter SaturationVoltage (V )
96 11993
IC– Collector Current ( mA )
20%
10%
Figure 6. Collector Dark Current vs. Ambient Temperature
100.00
VCE=5V
10.00
1.00
0.10
C
I – Collector Current ( mA)
0.01
0.1 1.0 10.0 100.0
96 11929
IF– Forward Current ( mA )
Figure 7. Collector Current vs. Forward Current
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4
Figure 9. Collector Emitter Saturation Voltage vs. Collector Current
1000
VCE=5V
100
10
CTR – CurrentTransfer Ratio(%)
1
0.1 1.0 10.0 100.0
96 11994
IF– Forward Current ( mA )
Figure 10. Current Transfer Ratio vs. Forward Current
Document Number 83525
Rev. 1.4, 26-Oct-04
MCT6H / MCT62H
Vishay Semiconductors
Figure 11. Turn on / off Time vs. Collector Current
10
µ
8
6
4
2
offon
t /t –Turnon / Turn off Time ( s )
0
012345678910
96 11995
Non saturated operation
t
off
IC– Collector Current ( mA )
=5V
V
S
Ω
R
=100
L
t
on
Package Dimensions in mm
Document Number 83525
Rev. 1.4, 26-Oct-04
14784
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5
MCT6H / MCT62H
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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6
Document Number 83525
Rev. 1.4, 26-Oct-04
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
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