SMC
Schottky Rectifier, 3.0 A
Cathode Anode
VS-MBRS340TRPbF
Vishay High Power Products
FEATURES
• Small foot print, surface mountable
• Very low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
PRODUCT SUMMARY
I
F(AV)
V
R
I
RM
3.0 A
40 V
35 mA at 125 °C
DESCRIPTION
The VS-MBRS340TRPbF surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 3.0 A
40 V
tp = 5 μs sine 1580 A
3.0 Apk, TJ = 125 °C 0.43 V
Range - 55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBRS340TRPbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
40 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy E
Repetitive avalanche current I
F(AV)
I
FSM
AR
50 % duty cycle at TL = 118 °C, rectangular waveform 3.0
50 % duty cycle at T
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse 80
TJ = 25 °C, IAS = 1.0 A, L = 12 mH 6 mJ
AS
Current decaying linearly to zero in 1 μs
Frequency limited by T
= 110 °C, rectangular waveform 4.0
L
Following any rated load
condition and with rated
V
applied
RRM
maximum VA = 1.5 x VR typical
J
1580
1.0 A
A
Document Number: 94321 For technical questions, contact: diodestech@vishay.com
Revision: 05-Mar-10 1
www.vishay.com
VS-MBRS340TRPbF
Vishay High Power Products
Schottky Rectifier, 3.0 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
3 A
Maximum forward voltage drop V
FM
(1)
3 A
6 A 0.68
6 A 0.57
TJ = 25 °C
Maximum reverse leakage current I
RM
Maximum junction capacitance C
Typical series inductance L
(1)
T
S
= 100 °C 20
J
= 125 °C 35
T
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 230 pF
Measured lead to lead 5 mm from package body 3.0 nH
Maximum voltage rate of change dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
0.525
0.43
2.0
10 000 V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to lead
Maximum thermal resistance,
junction to ambient
Approximate weight
Marking device Case style SMC (similar to DO-214AB) V34
Notes
dP
(1)
------------dT
(2)
Mounted 1" square PCB
1
tot
J
thermal runaway condition for a diode on its own heatsink
--------------<
R
thJA
(1)
T
, T
J
Stg
(2)
R
thJL
- 55 to 150 °C
12
DC operation
R
thJA
46
0.24 g
0.008 oz.
V
mAT
°C/W
www.vishay.com For technical questions, contact: diodestech@vishay.com
Document Number: 94321
2 Revision: 05-Mar-10
VS-MBRS340TRPbF
10
1
- Instantaneous
F
I
Forward Current (A)
0.1
0
0.1
V
TJ = 150 °C
T
T
0.2
0.3
0.4
0.5
0.6
- Forward Voltage Drop (V)
FM
= 125 °C
J
= 25 °C
J
0.7
Schottky Rectifier, 3.0 A
100 000
- Reverse Current (µA)
R
I
0.8
0.9
10 000
1000
100
10
Vishay High Power Products
TJ = 150 °C
T
= 125 °C
J
= 100 °C
T
J
= 75 °C
T
J
T
= 50 °C
J
T
= 25 °C
J
1
10
V
R
20 40
- Reverse Voltage (V)
300
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
1000
TJ = 25 °C
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
100
10
1.0
- Thermal Impedance (°C/W)
thJC
Z
0.1
0.00001
Single pulse
(thermal resistance)
0.0001
Fig. 4 - Maximum Thermal Impedance Z
100
- Junction Capacitance (pF)
T
C
10
0
0.001
15 20 25 35
105
V
- Reverse Voltage (V)
R
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.01
t1 - Rectangular Pulse Duration (s)
40 4530
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
0.1
Characteristics (Per Leg)
thJC
1.0
P
DM
t
1
t
2
1/t2
+ T
thJC
C
10
100
Document Number: 94321 For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 05-Mar-10 3