VS-MBRS320TRPbF
Vishay High Power Products
Schottky Rectifier, 3.0 A
Cathode |
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Anode |
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SMC |
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PRODUCT SUMMARY |
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IF(AV) |
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3.0 A |
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VR |
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20 V |
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IRM |
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35 mA at 125 °C |
FEATURES
• Small foot print, surface mountable
• Very low forward voltage drop
• High frequency operation
•Guard ring for enhanced ruggedness and long term reliability
•Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
•Compliant to RoHS directive 2002/95/EC
•Designed and qualified for industrial level
DESCRIPTION
The VS-MBRS320TRPbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL |
CHARACTERISTICS |
VALUES |
UNITS |
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IF(AV) |
Rectangular waveform |
3.0 |
A |
VRRM |
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20 |
V |
IFSM |
tp = 5 μs sine |
820 |
A |
VF |
3.0 Apk, TJ = 125 °C |
0.36 |
V |
TJ |
Range |
- 65 to 150 |
°C |
VOLTAGE RATINGS
PARAMETER |
SYMBOL |
VS-MBRS320TRPbF |
UNITS |
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Maximum DC reverse voltage |
VR |
20 |
V |
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Maximum working peak reverse voltage |
VRWM |
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ABSOLUTE MAXIMUM RATINGS
PARAMETER |
SYMBOL |
TEST CONDITIONS |
VALUES |
UNITS |
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Maximum average forward current |
IF(AV) |
50 % duty cycle at TL = 136 °C, rectangular waveform |
3.0 |
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Maximum peak one cycle |
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5 μs sine or 3 μs rect. pulse |
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Following any rated |
820 |
A |
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IFSM |
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load condition and with |
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non-repetitive surge current |
10 ms sine or 6 ms rect. pulse |
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80 |
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rated VRRM applied |
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Non-repetitive avalanche energy |
EAS |
TJ = 25 °C, IAS = 1.0 A, L = 8 mH |
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4 |
mJ |
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Repetitive avalanche current |
IAR |
Current decaying linearly to zero in 1 μs |
1.0 |
A |
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Frequency limited by TJ maximum VA = 1.5 x VR typical |
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Document Number: 94320 |
For technical questions, contact: diodestech@vishay.com |
www.vishay.com |
Revision: 05-Mar-10 |
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VS-MBRS320TRPbF
Vishay High Power Products Schottky Rectifier, 3.0 A
ELECTRICAL SPECIFICATIONS |
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PARAMETER |
SYMBOL |
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TEST CONDITIONS |
TYP. |
MAX. |
UNITS |
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3 A |
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TJ = 25 °C |
0.41 |
0.45 |
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Maximum forward voltage drop |
VFM (1) |
6 A |
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0.45 |
0.53 |
V |
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3 A |
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TJ = 125 °C |
0.29 |
0.36 |
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6 A |
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0.35 |
0.46 |
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TJ = 25 °C |
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0.04 |
0.5 |
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Maximum reverse leakage current |
IRM (1) |
TJ = 100 °C |
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VR = Rated VR |
8.0 |
20 |
mA |
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TJ = 125 °C |
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23 |
35 |
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Typical junction capacitance |
CT |
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C |
360 |
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pF |
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Typical series inductance |
LS |
Measured lead to lead 5 mm from package body |
3.0 |
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nH |
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Maximum voltage rate of change |
dV/dt |
Rated VR |
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10 000 |
V/μs |
Note |
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(1) Pulse width < 300 μs, duty cycle < 2 % |
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THERMAL - MECHANICAL SPECIFICATIONS |
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PARAMETER |
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SYMBOL |
TEST CONDITIONS |
VALUES |
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UNITS |
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Maximum junction and storage |
TJ (1), TStg |
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- 65 to 150 |
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°C |
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temperature range |
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Maximum thermal resistance, |
RthJL (2) |
DC operation |
12 |
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junction to lead |
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°C/W |
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Maximum thermal resistance, |
RthJA |
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46 |
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junction to ambient |
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Approximate weight |
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0.24 |
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g |
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0.008 |
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oz. |
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Marking device |
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Case style SMC (similar to DO-214AB) |
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V32 |
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Notes |
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(1) |
dPtot |
1 |
thermal runaway condition for a diode on its own heatsink |
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< -------------- |
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dTJ |
RthJA |
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(2) |
Mounted 1" square PCB |
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www.vishay.com |
For technical questions, contact: diodestech@vishay.com |
Document Number: 94320 |
2 |
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Revision: 05-Mar-10 |
VS-MBRS320TRPbF
Schottky Rectifier, 3.0 A Vishay High Power Products
100
<![if ! IE]> <![endif]>Instantaneous- |
<![if ! IE]> <![endif]>Current(A) |
1.0 |
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TJ = 150 °C |
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10 |
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<![if ! IE]> <![endif]>I |
<![if ! IE]> <![endif]>Forward |
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TJ = 125 °C |
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<![if ! IE]> <![endif]>F |
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TJ = 25 °C |
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0.1 |
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0 |
0.2 |
0.4 |
0.6 |
0.8 |
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg)
<![endif]>IR - Reverse Current (mA)
100 |
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TJ = 150 °C |
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10 |
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TJ = 125 °C |
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1 |
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T |
J = 100 °C |
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0.1 |
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TJ = 75 °C |
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TJ = 50 °C |
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0.01 |
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TJ = 25 °C |
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0.001 |
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0 |
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10 |
15 |
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VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg)
<![endif]>CT - Junction Capacitance (pF)
1000
TJ = 25 °C
100
0 |
5 |
10 |
15 |
20 |
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
<![if ! IE]> <![endif]>(°C/W) |
100 |
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<![if ! IE]> <![endif]>Impedance |
10 |
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PDM |
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<![if ! IE]> <![endif]>Thermal |
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D = 0.75 |
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t1 |
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1 |
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t2 |
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D = 0.50 |
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D = 0.33 |
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Notes: |
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<![if ! IE]> <![endif]>- |
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Single pulse |
D = 0.25 |
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1. Duty factor D = t1/t2 |
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<![if ! IE]> <![endif]>thJC |
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(thermal resistance) |
D = 0.20 |
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2. Peak TJ = PDM x ZthJC + TC |
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<![if ! IE]> <![endif]>Z |
0.1 |
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0.00001 |
0.0001 |
0.001 |
0.01 |
0.1 |
1 |
10 |
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t1 - Rectangular Pulse Duration (s)
Fig. 4 - - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Document Number: 94320 |
For technical questions, contact: diodestech@vishay.com |
www.vishay.com |
Revision: 05-Mar-10 |
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3 |