Vishay MBRS1100TR, MBRS190TR Data Sheet

Vishay MBRS1100TR, MBRS190TR Data Sheet

Bulletin PD-20592 04/01

MBRS190TR

MBRS1100TR

SCHOTTKY RECTIFIER

1 Amp

SMB

Major Ratings and Characteristics

Characteristics

MBR190TR

Units

MBR1100TR

IF(AV)

Rectangularwaveform

1.0

A

VRRM

 

100

V

IFSM

@ tp = 5 µs sine

870

A

VF

@1.0Apk,TJ=125°C

0.62

V

TJ

range

-55 to175

°C

Description/Features

The MBRS190TR, MBRS1100TR surface-mount Schottky rectifierhasbeendesignedforapplicationsrequiringlowforward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters,free-wheelingdiodes,batterycharging,andreverse battery protection.

Small foot print, surface mountable

Lowforwardvoltagedrop

High frequency operation

Guard ring for enhanced ruggedness and long term reliability

DeviceMarking:IR19/IR1C

CATHODE

 

 

ANODE

 

 

 

 

 

 

 

 

 

 

2.15 (.085)

 

 

 

 

 

 

 

 

 

 

 

 

3.80 (.150)

 

 

 

 

 

 

 

 

 

 

1.80 (.071)

 

 

 

 

 

3.30 (.130)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

2

4.70 (.185)

1 POLARITY 2 PART NUMBER

4.10 (.161)

 

 

 

 

2.5 TYP.

SOLDERING PAD

2.40 (.094)

 

 

(.098 TYP.)

 

 

 

 

 

1.90 (.075)

 

 

 

 

1.30 (.051)

 

0.30 (.012)

 

 

 

0.15 (.006)

2.0 TYP.

 

0.76 (.030)

5.60 (.220)

 

(.079 TYP.)

4.2 (.165)

 

5.00 (.197)

 

 

 

 

 

 

4.0 (.157)

Outline SMB

Dimensions in millimeters and (inches)

For recommended footprint and soldering techniques refer to application note #AN-994

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1

MBRS190TR, MBRS1100TR

Bulletin PD-20592 04/01

Voltage Ratings

Part number

MBRS190TR

MBRS1100TR

VR Max. DC Reverse Voltage (V)

90

100

VRWM Max. Working Peak Reverse Voltage (V)

 

 

Absolute Maximum Ratings

 

Parameters

Value

Units

Conditions

 

 

 

 

 

 

 

 

IF(AV)

Max.AverageForwardCurrent

1.0

A

50%dutycycle@TL=147°C,rectangularwaveform

IFSM

Max.PeakOneCycleNon-Repetitive

870

A

5µs Sineor3µsRect.pulse

Following any

rated

 

 

 

 

 

load condition

and

 

 

 

 

 

 

SurgeCurrent

50

 

10msSineor6msRect. pulse

with rated VRRMapplied

EAS

Non-RepetitiveAvalancheEnergy

6.0

mJ

TJ =25°C,IAS =0.5A,L=11mH

 

 

IAR

RepetitiveAvalancheCurrent

0.5

A

Currentdecayinglinearlytozeroin1µsec

 

 

 

 

 

Frequency limited by TJ max. Va = 1.5 x Vr typical

 

Electrical Specifications

 

Parameters

Value

Units

 

Conditions

 

 

 

 

 

 

 

VFM

Max. Forward Voltage Drop (1)

0.78

V

@ 1A

TJ

= 25 °C

 

* See Fig. 1

0.87

V

@ 2A

 

 

 

 

 

0.62

V

@ 1A

TJ

= 125 °C

 

 

0.70

V

@ 2A

 

 

 

 

IRM

Max. Reverse Leakage Current (1)

0.5

mA

TJ = 25 °C

VR

= rated VR

 

* See Fig. 2

1

mA

TJ = 125 °C

 

 

 

CT

Typical Junction Capacitance

42

pF

VR = 5VDC, (test signal range 100kHz to 1MHz) 25°C

LS

Typical Series Inductance

2.0

nH

Measured lead to lead 5mm from package body

dv/dt

Max. Volatge Rate of Charge

10000

V/ µs

 

 

 

 

(Rated VR)

 

 

 

 

 

(1) Pulse Width < 300µs, Duty Cycle < 2%

 

 

 

 

 

Thermal-Mechanical

Specifications

 

 

 

Parameters

 

Value

 

Units

Conditions

 

 

 

 

 

 

TJ

Max.JunctionTemperatureRange

-55to175

 

°C

 

Tstg

Max.StorageTemperatureRange

-55to175

 

°C

 

R

Max.ThermalResistance,Junction

36

 

°C/W

DCoperation

thJL

toLead

(2)

 

 

 

 

 

 

 

 

 

 

 

wt

ApproximateWeight

 

0.10

 

 

g(oz.)

 

 

 

 

 

 

 

 

CaseStyle

 

SMB

 

SimilarDO-214AA

 

 

 

 

 

 

 

(2) Mounted 1 inch square PCB, thermal probe connected to lead 2mm from package

2

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