Vishay MBRS140TRPBF Data Sheet

VS-MBRS140TRPbF

Vishay High Power Products

Schottky Rectifier, 1.0 A

Cathode Anode

SMB

PRODUCT SUMMARY

IF(AV)

1.0 A

VR

40 V

FEATURES

• Small foot print, surface mountable

• Low forward voltage drop

• High frequency operation

Guard ring for enhanced ruggedness and long term reliability

Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

Compliant to RoHS directive 2002/95/EC

Designed and qualified for industrial level

DESCRIPTION

The VS-MBRS140TRPbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

 

 

 

 

IF(AV)

Rectangular waveform

1.0

A

VRRM

 

40

V

IFSM

tp = 5 μs sine

380

A

VF

1.0 Apk, TJ = 125 °C

0.53

V

TJ

Range

- 55 to 150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

VS-MBRS140TRPbF

UNITS

 

 

 

 

Maximum DC reverse voltage

VR

40

V

Maximum working peak reverse voltage

VRWM

 

 

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

 

 

 

 

 

Maximum average forward current

IF(AV)

50 % duty cycle at TL = 119 °C, rectangular waveform

1.0

 

Maximum peak one cycle

 

5 μs sine or 3 μs rect. pulse

Following any rated

380

A

IFSM

load condition and with

non-repetitive surge current

10 ms sine or 6 ms rect. pulse

40

 

 

rated VRRM applied

 

 

 

 

Non-repetitive avalanche energy

EAS

TJ = 25 °C, IAS = 1 A, L = 6 mH

 

3.0

mJ

Repetitive avalanche current

IAR

Current decaying linearly to zero in 1 μs

1.0

A

Frequency limited by TJ maximum VA = 1.5 x VR typical

 

 

 

 

Document Number: 94319

For technical questions, contact: diodestech@vishay.com

www.vishay.com

Revision: 05-Mar-10

 

1

VS-MBRS140TRPbF

Vishay High Power Products Schottky Rectifier, 1.0 A

ELECTRICAL SPECIFICATIONS

 

 

 

 

 

PARAMETER

 

SYMBOL

TEST CONDITIONS

TYP.

MAX.

UNITS

 

 

 

 

 

 

 

 

 

 

1 A

TJ = 25 °C

0.52

0.6

 

 

 

 

 

 

 

 

Maximum forward voltage drop

 

VFM (1)

2 A

0.70

0.77

V

 

 

 

 

 

 

 

 

1 A

TJ = 125 °C

0.48

0.53

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2 A

0.63

0.71

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum reverse leakage current

 

IRM (1)

TJ = 25 °C

VR = Rated VR

-

0.1

mA

 

TJ = 125 °C

-

4.0

 

 

 

 

 

Maximum junction capacitance

 

CT

VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C

-

80

pF

Typical series inductance

 

LS

Measured lead to lead 5 mm from package body

-

2.0

nH

Maximum voltage rate of change

 

dV/dt

Rated VR

-

10 000

V/μs

Note

 

 

 

 

 

 

(1) Pulse width < 300 μs, duty cycle < 2 %

 

 

 

 

 

 

 

THERMAL - MECHANICAL SPECIFICATIONS

 

 

 

 

PARAMETER

 

SYMBOL

TEST CONDITIONS

VALUES

 

UNITS

 

 

 

 

 

 

 

 

Maximum junction and storage

TJ (1), TStg

 

- 55 to 150

 

°C

 

temperature range

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum thermal resistance,

RthJL (2)

DC operation

36

 

 

 

junction to lead

 

See fig. 4

 

 

 

 

 

 

 

°C/W

 

 

 

 

 

 

 

 

 

Maximum thermal resistance,

RthJA

DC operation

80

 

 

 

 

 

junction to ambient

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Approximate weight

 

 

0.10

 

g

 

 

 

 

 

 

 

 

 

0.003

 

oz.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Marking device

 

 

Case style SMB (similar to DO-214AA)

 

V14

 

 

 

 

 

 

 

 

Notes

 

 

 

 

 

 

 

(1)

dPtot

1

thermal runaway condition for a diode on its own heatsink

 

 

 

-------------

< --------------

 

 

 

 

dTJ

RthJA

 

 

 

 

 

 

(2)

Mounted 1" square PCB

 

 

 

 

www.vishay.com

For technical questions, contact: diodestech@vishay.com

Document Number: 94319

2

 

Revision: 05-Mar-10

Vishay MBRS140TRPBF Data Sheet

VS-MBRS140TRPbF

Schottky Rectifier, 1.0 A Vishay High Power Products

 

10

 

 

 

 

 

 

<![if ! IE]>

<![endif]>Current(A)

TJ = 150 °C

 

 

 

 

<![if ! IE]>

<![endif]>Instantaneous

TJ = 125 °C

 

 

 

 

TJ = 25 °C

 

 

 

 

 

 

 

 

 

 

 

1.0

 

 

 

 

 

<![if ! IE]>

<![endif]>I

<![if ! IE]>

<![endif]>Forward

 

 

 

 

 

<![if ! IE]>

<![endif]>-

 

 

 

 

 

 

<![if ! IE]>

<![endif]>F

 

 

 

 

 

 

 

0.1

 

 

 

 

 

 

0.2

0.4

0.6

0.8

1.0

1.2

VFM - Forward Voltage Drop (V)

Fig. 1 - Maximum Forward Voltage Drop Characteristics

<![if ! IE]>

<![endif]>IR - Reverse Current (mA)

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TJ = 150 °C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.0

 

 

 

 

 

 

 

 

 

TJ = 125 °C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.1

 

 

TJ = 100 °C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TJ = 75 °C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.01

 

 

 

 

 

 

 

 

 

TJ = 50 °C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.001

 

 

 

 

 

 

 

 

 

TJ = 25 °C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.0001

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

 

5

10

 

 

15

20

 

 

 

25

30

35

40

VR - Reverse Voltage (V)

Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage

<![if ! IE]>

<![endif]>CT - Junction Capacitance (pF)

1000

100

TJ

= 25 °C

 

10

0

10

20

30

40

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

<![if ! IE]>

<![endif]>(°C/W)

100

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>Impedance

10

 

 

 

 

 

 

 

 

 

 

 

 

 

PDM

 

 

 

 

 

 

 

t1

 

<![if ! IE]>

<![endif]>Thermal

 

 

 

 

 

 

 

1

 

 

D = 0.75

 

 

t2

 

 

 

D = 0.50

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Single pulse

D = 0.33

 

Notes:

 

 

<![if ! IE]>

<![endif]>-

 

D = 0.25

 

1. Duty factor D = t1/t2

.

<![if ! IE]>

<![endif]>thJC

 

 

 

(thermal resistance)

D = 0.20

 

2. Peak TJ = PDM x ZthJC + TC

<![if ! IE]>

<![endif]>Z

0.1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.00001

0.0001

0.001

0.01

0.1

1

10

100

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)

Document Number: 94319

For technical questions, contact: diodestech@vishay.com

www.vishay.com

Revision: 05-Mar-10

 

3

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