Vishay MBRS130TRPBF Data Sheet
SMB
Schottky Rectifier, 1.0 A
FEATURES
• Small foot print, surface mountable
• Very low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
Cathode
Anode
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
VS-MBRS130TRPbF
Vishay High Power Products
PRODUCT SUMMARY
I
F(AV)
V
R
I
RM
1.0 A
30 V
15 mA at 125 °C
DESCRIPTION
The VS-MBRS130TRPbF surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 1.0 A
30 V
tp = 5 μs sine 230 A
1.0 Apk, TJ = 125 °C 0.42 V
Range - 55 to 125 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBRS130TRPbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
30 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current, T
Non-repetitive avalanche energy E
Repetitive avalanche current I
= 25 °C
J
F(AV)
I
FSM
AR
AS
50 % duty cycle at TL = 147 °C, rectangular waveform 1.0
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse 50
TJ = 25 °C, IAS = 1 A, L = 6 mH 3.0 mJ
Current decaying linearly to zero in 1 μs
Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated
load condition and with
rated V
RRM
applied
870
1.0 A
A
Document Number: 94318 For technical questions, contact: diodestech@vishay.com
Revision: 05-Mar-10 1
www.vishay.com
VS-MBRS130TRPbF
Vishay High Power Products
Schottky Rectifier, 1.0 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
1 A
Maximum forward voltage drop V
FM
(1)
1 A
2 A 0.67
2 A 0.52
TJ = 25 °C
Maximum reverse leakage current I
RM
Maximum junction capacitance C
Typical series inductance L
T
S
= 100 °C 5.0
J
= 125 °C 15
T
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 200 pF
Measured lead to lead 5 mm from package body 2.0 nH
(1)
Maximum voltage rate of change dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
0.6
0.42
0.5
10 000 V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
(1)
Maximum junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance,
junction to lead
Maximum thermal resistance,
junction to ambient
J
Stg
(2)
R
thJL
DC operation
R
thJA
Approximate weight
Marking device Case style SMB (similar to DO-214AA) V13
Notes
dP
(1)
------------dT
(2)
Mounted 1" square PCB
1
tot
J
thermal runaway condition for a diode on its own heatsink
--------------<
R
thJA
- 55 to 125
- 55 to 150
25
80
0.10 g
0.003 oz.
V
mAT
°C
°C/W
www.vishay.com For technical questions, contact: diodestech@vishay.com
Document Number: 94318
2 Revision: 05-Mar-10
Loading...