Vishay MBRS1100TR, MBRS190TR Data Sheet

Bulletin PD-20592 04/01
MBRS190TR
MBRS1100TR
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
Characteristics Units
I
Rectangular waveform 1.0 A
V
RRM
I
@ tp = 5 µs sine 870 A
FSM
VF@ 1.0 Apk, TJ=125°C 0.62 V
TJrange - 55 to 175 °C
Device Marking: IR19/ IR1C
MBR190TR
MBR1100TR
100 V
1 Amp
SMB
Description/Features
The MBRS190TR, MBRS1100TR surface-mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, battery charging, and reverse battery protection.
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
CATHODE ANODE
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2.15 (.085)
1.80 (.071)
2.40 (.094)
1.90 (.075)
1.30 (.051)
0.76 (.030)
4.70 (.185)
4.10 (.161)
5.60 (.220)
5.00 (.197)
3.80 (.150)
3.30 (.130)
0.30 (.012)
0.15 (.006)
1 2
POLARITY
1
(.098 TYP.)
2.0 TYP.
(.079 TYP.)
2.5 TYP.
2
PART NUMBER
SOLDERING PAD
4.2 (.165)
4.0 (.157)
Outline SMB
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
1
MBRS190TR, MBRS1100TR
Bulletin PD-20592 04/01
Voltage Ratings
Part number MBRS190TR MBRS1100TR
VRMax. DC Reverse Voltage (V) 90 100
V
Max. Working Peak Reverse Voltage (V)
RWM
Absolute Maximum Ratings
Parameters Value Units Conditions
I
Max. Average Forward Current 1.0 A 50% duty cycle @ TL = 147 °C, rectangular wave form
F(AV)
I
Max. Peak One Cycle Non-Repetitive 870 A 5µs Sine or 3µs Rect. pulse
FSM
Surge Current 50 10ms Sine or 6ms Rect. pulse
EASNon- Repetitive Avalanche Energy 6.0 mJ TJ = 25 °C, IAS = 0.5A, L = 11mH
IARRepetitive Avalanche Current 0.5 A Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. Va = 1.5 x Vr typical
Following any rated load condition and with rated V
RRM
applied
Electrical Specifications
Parameters Value Units Conditions
VFMMax. Forward Voltage Drop (1) 0.78 V @ 1A
* See Fig. 1 0.87 V @ 2A
0.62 V @ 1A
0.70 V @ 2A
IRMMax. Reverse Leakage Current (1) 0.5 mA TJ = 25 °C
* See Fig. 2 1 mA TJ = 125 °C
CTTypical Junction Capacitance 42 pF VR = 5VDC, (test signal range 100kHz to 1MHz) 25°C
LSTypical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Volatge Rate of Charge 10000 V/ µs
(Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
TJ = 25 °C
TJ = 125 °C
VR = rated V
R
Thermal-Mechanical Specifications
Parameters Value Units Conditions
TJMax. Junction Temperature Range -55 to 175 °C
T
Max. Storage Temperature Range -55 to 175 °C
stg
R
Max. Thermal Resistance, Junction 36 °C/W DC operation
thJL
to Lead (2)
wt Approximate Weight 0.10 g (oz.)
Case Style SMB Similar DO-214AA
(2) Mounted 1 inch square PCB, thermal probe connected to lead 2mm from package
2
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MBRS190TR, MBRS1100TR
Bulletin PD-20592 04/01
10
Tj = 175˚C Tj = 125˚C
(A)
F
Tj = 25˚C
1
Instantaneous Forward Current - I
10
Tj = 175˚C
1
(m A)
0.1
R
0.01
0.001
Reverse Current - I
0.0001
.00001
0 20406080100
Fig. 2 - Typical Peak Reverse Current
100
(p F)
T
150˚C
125˚C 100˚C
75˚C
50˚C
25˚C
Reverse Voltage - VR (V)
Vs. Reverse Voltage
T = 25˚C
J
0.1
0.2 0.4 0.6 0.8 1
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
100
D = 0.75
(°C/W)
thJC
10
D = 0.50 D = 0.33 D = 0.25 D = 0.20
1
Single Pulse
Thermal Impedance Z
(Thermal Resistance)
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Fig. 4 - Max. Thermal Impedance Z
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Junction Capacitance - C
10
0 20406080100
Fig. 3 - Typical Junction Capacitance
Notes:
1. Duty factor D = t1/ t2 .
2. Peak Tj = Pdm x ZthJC + Tc .
t1 , Rectangular Pulse Duration (Seconds)
Characteristics (Per Leg)
thJC
Reverse Voltage - VR (V)
Vs. Reverse Voltage
P
DM
t
1
t
2
3
MBRS190TR, MBRS1100TR
Bulletin PD-20592 04/01
180 170
DC
160 150 140
Square wave (D = 0.50)
130
Rated Vr applied
120
Allowable Lead Temperature (°C)
see note (2)
110
0 0.4 0.8 1.2 1.6
Average Forward Current - I
Fig. 4 - Maximum Average Forward Current
Vs. Allowable Lead Temperature
1000
(A)
FSM
100
D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75
F(AV)
(A)
1
D = 0.20 D = 0.25 D = 0.33
0.8
D = 0.50 D = 0.75
0.6
RMS Limit
0.4
0.2
Average Power Loss (Watts)
DC
0
0 0.3 0.6 0.9 1.2 1.5
Average Forward Current - I
Fig. 5 - Maximum Average Forward Dissipation
Vs. Average Forward Current
F(AV)
(A)
Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration
(2) Formula used: TC = TJ - (Pd + Pd
Pd = Forward Power Loss = I
Pd
= Inverse Power Loss = VR1 x IR (1 - D); IR @ V
REV
F(AV)
4
At Any Rated Load Condition And With rated Vrrm Applied Following Surge
Non-Repetitive Surge Current - I
10
10 100 1000 10000
Square Wave Pulse Duration - T
) x R
REV
x VFM @ (I
;
thJC
/ D) (see Fig. 6);
F(AV)
= 80% rated V
R1
R
(Microsec)
p
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Tape & Reel Information
MBRS190TR, MBRS1100TR
Bulletin PD-20592 04/01
Dimensions in millimeters and (inches)
Marking & Identification
Each device has marking and identification on two rows.
- The first row designates the device as manufactured by International Rectifier as indicated by the letters "IR", then Current and Voltage.
- The second row shows the data code: Year and Week.
See below marking diagram.
FIRST ROW
IR B 1 C
SECOND ROW
Date Code
Y Y W W
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Ordering Information
MBRS1100TR - TAPE AND REEL
WHEN ORDERING, INDICATE THE PART NUMBER
AND THE QUANTITY ( IN MULTIPLES OF 3000
PIECES).
EXAMPLE: MBRS1100TR - 6000 PIECES
5
MBRS190TR, MBRS1100TR
Bulletin PD-20592 04/01
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 04/01
6
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