Vishay MBRS1100TR, MBRS190TR Data Sheet
Bulletin PD-20592 04/01
MBRS190TR
MBRS1100TR
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
Characteristics Units
I
Rectangular waveform 1.0 A
F(AV)
V
RRM
I
@ tp = 5 µs sine 870 A
FSM
VF@ 1.0 Apk, TJ=125°C 0.62 V
TJrange - 55 to 175 °C
Device Marking: IR19/ IR1C
MBR190TR
MBR1100TR
100 V
1 Amp
SMB
Description/Features
The MBRS190TR, MBRS1100TR surface-mount Schottky
rectifier has been designed for applications requiring low forward
drop and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, free-wheeling diodes, battery charging, and reverse
battery protection.
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
CATHODE ANODE
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2.15 (.085)
1.80 (.071)
2.40 (.094)
1.90 (.075)
1.30 (.051)
0.76 (.030)
4.70 (.185)
4.10 (.161)
5.60 (.220)
5.00 (.197)
3.80 (.150)
3.30 (.130)
0.30 (.012)
0.15 (.006)
1 2
POLARITY
1
(.098 TYP.)
2.0 TYP.
(.079 TYP.)
2.5 TYP.
2
PART NUMBER
SOLDERING PAD
4.2 (.165)
4.0 (.157)
Outline SMB
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
1
MBRS190TR, MBRS1100TR
Bulletin PD-20592 04/01
Voltage Ratings
Part number MBRS190TR MBRS1100TR
VRMax. DC Reverse Voltage (V) 90 100
V
Max. Working Peak Reverse Voltage (V)
RWM
Absolute Maximum Ratings
Parameters Value Units Conditions
I
Max. Average Forward Current 1.0 A 50% duty cycle @ TL = 147 °C, rectangular wave form
F(AV)
I
Max. Peak One Cycle Non-Repetitive 870 A 5µs Sine or 3µs Rect. pulse
FSM
Surge Current 50 10ms Sine or 6ms Rect. pulse
EASNon- Repetitive Avalanche Energy 6.0 mJ TJ = 25 °C, IAS = 0.5A, L = 11mH
IARRepetitive Avalanche Current 0.5 A Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. Va = 1.5 x Vr typical
Following any rated
load condition and
with rated V
RRM
applied
Electrical Specifications
Parameters Value Units Conditions
VFMMax. Forward Voltage Drop (1) 0.78 V @ 1A
* See Fig. 1 0.87 V @ 2A
0.62 V @ 1A
0.70 V @ 2A
IRMMax. Reverse Leakage Current (1) 0.5 mA TJ = 25 °C
* See Fig. 2 1 mA TJ = 125 °C
CTTypical Junction Capacitance 42 pF VR = 5VDC, (test signal range 100kHz to 1MHz) 25°C
LSTypical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Volatge Rate of Charge 10000 V/ µs
(Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
TJ = 25 °C
TJ = 125 °C
VR = rated V
R
Thermal-Mechanical Specifications
Parameters Value Units Conditions
TJMax. Junction Temperature Range -55 to 175 °C
T
Max. Storage Temperature Range -55 to 175 °C
stg
R
Max. Thermal Resistance, Junction 36 °C/W DC operation
thJL
to Lead (2)
wt Approximate Weight 0.10 g (oz.)
Case Style SMB Similar DO-214AA
(2) Mounted 1 inch square PCB, thermal probe connected to lead 2mm from package
2
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