Vishay MBRA120 Data Sheet
Bulletin PD-20643 rev. D 03/03
MBRA120
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
Characteristics MBRA120 Units
I
Rect. Waveform 1.0 A
FAV
V
RRM
I
@ tp = 5 µs sine 310 A
FSM
VF@ 1.0Apk, TJ=125°C 0.34 V
TJrange - 65 to 150 °C
Device Marking: IR12A
20 V
1.0 Amp
SMA
Description/ Features
The MBRA120 surface mount Schottky rectifier has been
designed for applications requiring low forward drop and very
small foot prints on PC boards. Typical applications are in disk
drives, switching power supplies, converters, free-wheeling
diodes, battery charging, and reverse battery protection.
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
CATHODE ANODE
www.irf.com
1.40 (.055)
1.60 (.062)
2.00 (.078)
2.44 (.096)
0.76 (.030)
1.52 (.060)
2.50 (.098)
2.90 (.114)
4.00 (.157)
4.60 (.181)
.152 (.006)
.305 (.012)
.103 (.004)
4.80 (.188)
5.28 (.208)
.203 (.008)
Outline SMA Similar to D-64
1 2
1.47 MIN.
SOLDERING PAD
2
2.10 MAX.
(.085 MAX. )
5.53 (.218)
POLARITY PART NUMBER
1
(.058 MIN.)
1.27 MIN.
(.050 MIN.)
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
1
MBRA120
Bulletin PD-20643 rev. D 03/03
Voltage Ratings
Part number MBRA120
VRMax. DC Reverse Voltage (V)
V
Max. Working Peak Reverse Voltage (V)
RWM
20
Absolute Maximum Ratings
Parameters Value Units Conditions
I
Max. Average Forward Current 1.0 A 50% duty cycle @ TL = 136°C, rectangular wave form
F(AV)
I
Max. Peak One Cycle Non-Repetitive 310 5µs Sine or 3µs Rect. pulse
FSM
Surge Current 40 10ms Sine or 6ms Rect. pulse
EASNon Repetitive Avalanche Energy 2.0 mJ TJ = 25 °C, IAS = 1A, L = 4mH
IARRepetitive Avalanche Current 1.0 A
Following any rated
load condition and
with rated V
RRM
applied
Electrical Specifications
Parameters Typ. Max. Units Conditions
VFMMax. Forward Voltage Drop (1) 0.42 0.45 V @ 1A
0.46 0.52 V @ 2A
0.33 0.37 V @ 1A
0.39 0.45 V @ 2A
0.30 0.35 V @ 1A
0.36 0.43 V @ 2A
IRMMax. Reverse Leakage Current(1 ) 0.015 0.2 mA T J = 25 °C
2.0 6.0 mA TJ = 100 °C VR = rated V
7.0 20 mA TJ = 125 °C
CTTypical Junction Capacitance 110 - pF VR = 5VDC (test signal range 100kHz to
1Mhz), @ 25°C
LSTypical Series Inductance 2.0 - nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change - 10000 V/ µs (Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
TJ = 25 °C
TJ = 100 °C
TJ = 125 °C
Thermal-Mechanical Specifications
Parameters Value Units Conditions
TJMax. Junction Temperature Range(*) - 65 to 150 °C
T
Max. Storage Temperature Range - 65 t o 150 °C
stg
R
Max. Thermal Resistance Junction 35 °C/W DC operation
thJL
to Lead (**)
R
Max. Thermal Resistance Junction 80 °C/W
thJA
to Ambient
Wt Approximate Weight 0.07(0.002) gr (oz)
Case Style SMA Similar D-64
Device Marking IR12A
(*) dPtot 1
< thermal runaway condition for a diode on its own heatsink
dTj Rth( j-a)
(**) Mounted 1 inch square PCB
R
2 www.irf.com
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