Vishay MBRB735, MBRB745, MBR735, MBR745 Data Sheet
Bulletin PD-2.325 rev. D 07/01
C
Anode
1
3
Base
Cathode
2
N/C
MBR735/ MBR745
MBRB735/ MBRB745
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
Characteristics Values Units
I
Rectangular 7.5 A
F(AV)
waveform
V
RRM
I
@ tp = 5 µs sine 690 A
FSM
V
@ 7.5 Apk, TJ = 125°C 0.57 V
F
T
range - 65 to 150 °C
J
MBR735/ MBR745
35/ 45 V
7.5 Amp
Description/Features
The MBR7.. Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150° C junction
temperature. Typical applications are in switching power
supplies, converters, free-wheeling diodes, and reverse battery
protection.
150° C TJ operation
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Case Styles
MBRB735/ MBRB745
Base
Cathode
1
athode
TO-220AC
www.irf.com
3
Anode
D
2
PAK
1
MBR735/ MBR745, MBRB735/ MBRB745
Bulletin PD-2.325 rev. D 07/01
Voltage Ratings
Parameters MBR.735 MBR.745
VRMax. DC Reverse Voltage (V) 35 45
V
Max. Working Peak Reverse Voltage (V)
RWM
Absolute Maximum Ratings
Parameters MBR.. Conditions
I
Max. Average Forward Current 7.5 A @ TC = 131 °C (Rated VR)
F(AV)
I
Non-Repetitive Peak Surge Current 690 A 5µs Sine or 3µs Rect. pulse
FSM
I
Peak Repetitive Reverse Surge Current 1.0 A 2.0 µsec 1.0 KHz
RRM
Units
Following any rated load
condition and with rated
V
applied
RRM
150 Surge applied at rated load condition halfwave single
phase 60Hz
Electrical Specifications
Parameters MBR.. Conditions
VFMMax. Forward Voltage Drop(1) 0.84 V @ 15A TJ = 25 °C
IRMMax. Instantaneus Reverse Current 0.1 mA TJ = 25 °C Rated DC voltage
(1) 15 mA TJ = 125 °C
CTMax. Junction Capacitance 400 pF VR = 5VDC, (test signal range 100Khz to 1Mhz) 25°C
LSTypical Series Inductance 8.0 nH Measured from top of terminal to mounting plane
dv/dt Max. Voltage Rate of Change 1000 V/ µs
(Rated VR)
(1) Pulse Width < 300µs, Duty Cycle <2%
Units
0.57 V @ 7.5A TJ = 125 °C
0.72 V @ 15A
Thermal-Mechanical Specifications
Parameters MBR.. Conditions
TJMax. Junction Temperature Range - 65 to 150 °C
T
Max. Storage Temperature Range - 65 to 17 5 °C
stg
R
Max. Thermal Resistance Junction 3.0 °C/W DC operation
thJC
to Case
R
Typical Thermal Resistance, Case 0.50 °C/W Mounting surface, smooth and greased
thCS
to Heatsink
wt Approximate Weight 2 (0.07) g (oz.)
T Mounting Torque Min. 6 (5)
Max. 12 (10
2
Units
Kg-cm
(Ibf-in)
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MBR735/ MBR745, MBRB735/ MBRB745
Bulletin PD-2.325 rev. D 07/01
100
(A)
F
10
Instantaneous Forward Current - I
T = 150˚C
J
T = 125˚C
J
T = 25˚C
J
100
T = 150˚C
10
(mA)
R
0.1
0.01
Reverse Current - I
0.001
0.0001
J
125˚C
1
100˚C
75˚C
50˚C
25˚C
0 5 10 15 20 25 30 35 40 45
Reverse Voltage - VR (V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage (Per Leg)
1000
T = 25˚C
(p F)
T
J
1
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Junction Capacitance - C
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Forward Voltage Drop - VFM (V)
Fig. 1 - Max. Forward Voltage Drop Characteristics
(Per Leg)
0 1020304050
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage (Per Leg)
10
D = 0.75
D = 0.50
D = 0.33
1
(°C/W)
thJC
Thermal Impedance Z
0.1
0.01
D = 0.25
D = 0.20
Single Pulse
(Thermal Resistance)
P
DM
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
t1 , Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
Characteristics (Per Leg)
thJC
t
1
t
2
3
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