VISHAY MBR 6045WT VIS Datasheet

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Base

common

cathode

Common

cathode

2

2

13

Anode

1

Anode

2

TO-247AC

Schottky Rectifier, 2 x 30 A

PRODUCT SUMMARY

Package TO-247AC

I

F(AV)

V

R

V

at I

F

F

I

max. 150 mA at 125 °C

RM

T

max. 150 °C

J

Diode variation Common cathode

E

AS

VS-MBR6045WTPbF, VS-MBR6045WT-N3

Vishay Semiconductors

FEATURES

• 150 °C TJ operation

• Very low forward voltage drop

• High frequency operation

• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance

• Guard ring for enhanced ruggedness and long
term reliability

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified according to JEDEC-JESD47

• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)

2 x 30 A

45 V

0.55 V

27 mJ

DESCRIPTION

The VS-MBR6045WT... center tap Schottky rectifier has
been optimized for very low forward voltage drop, with
moderate leakage. The proprietary barrier technology allows
for reliable operation up to 150 °C junction temperature.
Typical applications are in switching power supplies,
converters, freewheeling diodes, and reverse battery
protection.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

I

FSM

V

T

RRM

F

J

Rectangular waveform 60 A

45 V

tp = 5 μs sine 2900 A

30 Apk, TJ = 125 °C (per leg) 0.55 V

- 55 to 150 °C

VOLTAGE RATINGS

PARAMETER SYMBOL VS-MBR6045WTPbF VS-MBR6045WT-N3 UNITS

Maximum DC reverse voltage V

Maximum working peak reverse voltage V

R

RWM

45 45 V

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average
forward current
See fig. 5

Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7

Non-repetitive avalanche energy per leg E

Repetitive avalanche current per leg I

per leg

per device 60

I

F(AV)

I

FSM

AR

50 % duty cycle at TC = 122 °C, rectangular waveform

5 µs sine or 3 µs rect. pulse

10 ms sine or 6 ms rect. pulse 360

TJ = 25 °C, IAS = 4 A, L = 3.4 mH 27 mJ

AS

Current decaying linearly to zero in 1 μs
Frequency limited by T

J

Following any rated load
condition and with rated

applied

V

RRM

maximum VA = 1.5 x VR typical

30

2900

6A

A

Revision: 30-Aug-11

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Document Number: 94298

VS-MBR6045WTPbF, VS-MBR6045WT-N3

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ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop per leg
See fig. 1

(1)

V

FM

30 A T

30 A

Maximum reverse leakage current per leg
See fig. 2

I

RM

Threshold voltage V

Forward slope resistance r

Maximum junction capacitance per leg C

Typical series inductance per leg L

F(TO)

TJ = 25 °C

(1)

T

J

TJ = TJ maximum

t

VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 1400 pF

T

Measured lead to lead 5 mm from package body 7.5 nH

S

Maximum voltage rate of change dV/dt Rated V

Note

(1)

Pulse width < 300 μs, duty cycle < 2 %

= 125 °C 150

R

T

= 25 °C

J

= 125 °C 0.55

J

V

= Rated V

R

Vishay Semiconductors

0.62

1

R

0.27 V

7.3 m

10 000 V/µs

V60 A 0.75

mA

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
junction to case per leg

Maximum thermal resistance,
junction to case per package

Typical thermal resistance,
case to heatsink

Approximate weight

Mounting torque

minimum 6 (5)

maximum 12 (10)

Marking device Case style TO-247AC (JEDEC) MBR6045WT

T

R

R

J

, T

thJC

thCS

Stg

DC operation
See fig. 4

DC operation 0.5

Mounting surface, smooth and greased 0.24

- 55 to 150 °C

1.0

°C/W

6g

0.21 oz.

kgf · cm

(lbf · in)

Revision: 30-Aug-11

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VS-MBR6045WTPbF, VS-MBR6045WT-N3

0.001

1

10

100

0.1

0.01

1000

I

R

- Reverse Current (mA)

V

R

- Reverse Voltage (V)

1051520

40

45

25 30 35

0

TJ = 150 °C

TJ = 125 °C

TJ = 100 °C

TJ = 75 °C

TJ = 50 °C

TJ = 25 °C

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Impedance (°C/W)

100 10

Single pulse

(thermal resistance)

D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20

P

DM

t

1

t

2

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

C

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1000

100

TJ = 150 °C

= 125 °C

T

J

= 25 °C

T

10

- Instantaneous

F

I

Forward Current (A)

1

0.2 0.4 0.6 0.8 1.0

0

V

- Forward Voltage Drop (V)

FM

Fig. 1 - Maximum Forward Voltage Drop Characteristics

(Per Leg)

J

Vishay Semiconductors

1.61.2 1.4

Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage (Per Leg)

10 000

1000

- Junction Capacitance (pF)

T

C

100

0

TJ = 25 °C

2010 30 40

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs.

Reverse Voltage (Per Leg)

50

Revision: 30-Aug-11

Fig. 4 - Maximum Thermal Impedance Z

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Characteristics (Per Leg)

thJC

3

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Document Number: 94298

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100

110

120

130

140

150

Allowable Case Temperature (°C)

I

F(AV)

- Average Forward Current (A)

10 5 15 20

454030 3525

0

DC

See note (1)

Square wave (D = 0.50)
100 % rated V

R

applied

100

1000

10 000

I

FSM

- Non-Repetitive Surge Current (A)

tp - Square Wave Pulse Duration (µs)

100 1000

10 000

10

At any rated load condition
and with rated V

RRM

applied

following surge

VS-MBR6045WTPbF, VS-MBR6045WT-N3

Vishay Semiconductors

30

D = 0.20
D = 0.25

25

D = 0.33
D = 0.50
D = 0.75

20

Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current (Per Leg)

15

10

5

Average Power Loss (W)

0

0

1051520

I

- Average Forward Current (A)

F(AV)

Fig. 6 - Forward Power Loss Characteristics

RMS limit

DC

40 4525 30 35

(Per Leg)

Note

(1)

Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 100 % rated V

REV

Revision: 30-Aug-11

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Fig. 7 - Maximum Non-Repetitive Surge Current

(Per Leg)

L

High-speed

switch

Freewheel

diode

40HFL40S02

= 25 V

V

d

+

D.U.T.

Current
monitor

IRFP460

R

= 25 Ω

g

Fig. 8 - Unclamped Inductive Test Circuit

) x R

x VFM at (I

F(AV)

REV

;

thJC

/D) (see fig. 6);

F(AV)

R

4

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ORDERING INFORMATION TABLE

VS-MBR6045WTPbF, VS-MBR6045WT-N3

Vishay Semiconductors

Device code

1

2

3

4

5

6

7

MBR 60 45 WT PbFVS-

1

- Vishay Semiconductors product

- Schottky MBR series

- Current rating (60 = 60 A)

- Voltage rating (45 = 45 V)

Circuit configuration:

-

Center tap (dual) TO-247

Environmental digit

-

62 43 5

PbF = Lead (Pb)-free and RoHS compliant

-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free

ORDERING INFORMATION (Example)

PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION

VS-MBR6045WTPbF 25 500 Antistatic plastic tube

VS-MBR6045WT-N3 25 500 Antistatic plastic tube

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95223

Part marking information

TO-247AC PbF www.vishay.com/doc?95226

TO-247AC -N3 www.vishay.com/doc?95007

Revision: 30-Aug-11

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0.10 AC

M M

E

N

(2)

(3)

(4)

(4)

(2) R/2

B

2 x R

S

D

See view B

2 x e

b4

3 x b

2 x b2

L

C

(5) L1

1

2

3

Q

D

A

A2

A

A

A1

C

Ø K BD

M M

A

(6)

Ø P

(Datum B)

FP1

D1 (4)

4

E1

0.01 BD

M M

View A - A

Thermal pad

D2

DDE E

C

C

View B

(b1, b3, b5)

Base metal

c1

(b, b2, b4)

Section C - C, D - D, E - E

(c)

Planting

Lead assignments

Diodes

1. - Anode/open

2. - Cathode

3. - Anode

DIMENSIONS in millimeters and inches

Outline Dimensions

Vishay Semiconductors

SYMBOL

MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

NOTES SYMBOL

MILLIMETERS INCHES

NOTES

A 4.65 5.31 0.183 0.209 D2 0.51 1.30 0.020 0.051
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3
A2 1.50 2.49 0.059 0.098 E1 13.72 - 0.540 -

b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 FK 2.54 0.010
b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634
b3 1.65 2.37 0.065 0.094 L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135 N 7.62 BSC 0.3
b5 2.59 3.38 0.102 0.133 P 3.56 3.66 0.14 0.144

c 0.38 0.86 0.015 0.034 P1 - 6.98 - 0.275
c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224

D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 1.78 0.216
D1 13.08 - 0.515 - 4 S 5.51 BSC 0.217 BSC

Notes

(1)

Dimensioning and tolerancing per ASME Y14.5M-1994

(2)

(3)

(4)

(5)

(6)

(7)

Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at

the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC outline TO-247 with exception of dimension c

Revision: 16-Jun-11

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