VISHAY MBR 6045WT VIS Datasheet

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Base

common

cathode

Common

cathode

2

2

13

Anode

1

Anode

2

TO-247AC

Schottky Rectifier, 2 x 30 A

PRODUCT SUMMARY

Package TO-247AC

I

F(AV)

V

R

V

at I

F

F

I

max. 150 mA at 125 °C

RM

T

max. 150 °C

J

Diode variation Common cathode

E

AS

VS-MBR6045WTPbF, VS-MBR6045WT-N3

Vishay Semiconductors

FEATURES

• 150 °C TJ operation

• Very low forward voltage drop

• High frequency operation

• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance

• Guard ring for enhanced ruggedness and long
term reliability

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified according to JEDEC-JESD47

• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)

2 x 30 A

45 V

0.55 V

27 mJ

DESCRIPTION

The VS-MBR6045WT... center tap Schottky rectifier has
been optimized for very low forward voltage drop, with
moderate leakage. The proprietary barrier technology allows
for reliable operation up to 150 °C junction temperature.
Typical applications are in switching power supplies,
converters, freewheeling diodes, and reverse battery
protection.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

I

FSM

V

T

RRM

F

J

Rectangular waveform 60 A

45 V

tp = 5 μs sine 2900 A

30 Apk, TJ = 125 °C (per leg) 0.55 V

- 55 to 150 °C

VOLTAGE RATINGS

PARAMETER SYMBOL VS-MBR6045WTPbF VS-MBR6045WT-N3 UNITS

Maximum DC reverse voltage V

Maximum working peak reverse voltage V

R

RWM

45 45 V

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average
forward current
See fig. 5

Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7

Non-repetitive avalanche energy per leg E

Repetitive avalanche current per leg I

per leg

per device 60

I

F(AV)

I

FSM

AR

50 % duty cycle at TC = 122 °C, rectangular waveform

5 µs sine or 3 µs rect. pulse

10 ms sine or 6 ms rect. pulse 360

TJ = 25 °C, IAS = 4 A, L = 3.4 mH 27 mJ

AS

Current decaying linearly to zero in 1 μs
Frequency limited by T

J

Following any rated load
condition and with rated

applied

V

RRM

maximum VA = 1.5 x VR typical

30

2900

6A

A

Revision: 30-Aug-11

1

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Document Number: 94298

VS-MBR6045WTPbF, VS-MBR6045WT-N3

www.vishay.com

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop per leg
See fig. 1

(1)

V

FM

30 A T

30 A

Maximum reverse leakage current per leg
See fig. 2

I

RM

Threshold voltage V

Forward slope resistance r

Maximum junction capacitance per leg C

Typical series inductance per leg L

F(TO)

TJ = 25 °C

(1)

T

J

TJ = TJ maximum

t

VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 1400 pF

T

Measured lead to lead 5 mm from package body 7.5 nH

S

Maximum voltage rate of change dV/dt Rated V

Note

(1)

Pulse width < 300 μs, duty cycle < 2 %

= 125 °C 150

R

T

= 25 °C

J

= 125 °C 0.55

J

V

= Rated V

R

Vishay Semiconductors

0.62

1

R

0.27 V

7.3 m

10 000 V/µs

V60 A 0.75

mA

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
junction to case per leg

Maximum thermal resistance,
junction to case per package

Typical thermal resistance,
case to heatsink

Approximate weight

Mounting torque

minimum 6 (5)

maximum 12 (10)

Marking device Case style TO-247AC (JEDEC) MBR6045WT

T

R

R

J

, T

thJC

thCS

Stg

DC operation
See fig. 4

DC operation 0.5

Mounting surface, smooth and greased 0.24

- 55 to 150 °C

1.0

°C/W

6g

0.21 oz.

kgf · cm

(lbf · in)

Revision: 30-Aug-11

For technical questions within your region: [e-mail]

2

, [e-mail], [e-mail]

Document Number: 94298

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-MBR6045WTPbF, VS-MBR6045WT-N3

0.001

1

10

100

0.1

0.01

1000

I

R

- Reverse Current (mA)

V

R

- Reverse Voltage (V)

1051520

40

45

25 30 35

0

TJ = 150 °C

TJ = 125 °C

TJ = 100 °C

TJ = 75 °C

TJ = 50 °C

TJ = 25 °C

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Impedance (°C/W)

100 10

Single pulse

(thermal resistance)

D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20

P

DM

t

1

t

2

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

C

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1000

100

TJ = 150 °C

= 125 °C

T

J

= 25 °C

T

10

- Instantaneous

F

I

Forward Current (A)

1

0.2 0.4 0.6 0.8 1.0

0

V

- Forward Voltage Drop (V)

FM

Fig. 1 - Maximum Forward Voltage Drop Characteristics

(Per Leg)

J

Vishay Semiconductors

1.61.2 1.4

Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage (Per Leg)

10 000

1000

- Junction Capacitance (pF)

T

C

100

0

TJ = 25 °C

2010 30 40

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs.

Reverse Voltage (Per Leg)

50

Revision: 30-Aug-11

Fig. 4 - Maximum Thermal Impedance Z

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Characteristics (Per Leg)

thJC

3

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Document Number: 94298