Vishay MBR6045WTPBF Data Sheet
Vishay High Power Products
Schottky Rectifier, 2 x 30 A
MBR6045WTPbF
Base
common
cathode
2
FEATURES
• 150 °C TJ operation
• Center tap TO-247 package
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level
TO-2 47AC
1 3
Anode
1
2
Common
cathode
Anode
2
DESCRIPTION
PRODUCT SUMMARY
I
F(AV)
V
R
2 x 30 A
45 V
The MBR6045WTPbF center tap Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Rectangular waveform 60 A
45 V
tp = 5 µs sine 2900 A
30 Apk, TJ = 125 °C (per leg) 0.55 V
- 55 to 150 °C
Pb-free
Available
RoHS*
COMPLIANT
VOLTAGE RATINGS
PARAMETER SYMBOL MBR6045WTPbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
45 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg E
Repetitive avalanche current per leg I
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94298 For technical questions, contact: diodes-tech@vishay.com
Revision: 14-Aug-08 1
per leg
I
per device 60
F(AV)
I
FSM
AR
50 % duty cycle at TC = 122 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 360
TJ = 25 °C, IAS = 4 A, L = 3.4 mH 27 mJ
AS
Current decaying linearly to zero in 1 µs
Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated load
condition and with rated
V
applied
RRM
30
2900
A
6A
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MBR6045WTPbF
Vishay High Power Products
Schottky Rectifier, 2 x 30 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1
(1)
V
FM
30 A T
30 A
Maximum reverse leakage current per leg
See fig. 2
I
RM
Threshold voltage V
Forward slope resistance r
Maximum junction capacitance per leg C
Typical series inductance per leg L
F(TO)
TJ = 25 °C
(1)
T
= 125 °C 150
J
TJ = TJ maximum
t
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 1400 pF
T
Measured lead to lead 5 mm from package body 7.5 nH
S
Maximum voltage rate of change dV/dt Rated V
T
= 25 °C
J
= 125 °C 0.55
J
V
= Rated V
R
R
R
0.62
1
0.27 V
7.3 mΩ
10 000 V/µs
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style TO-247AC (JEDEC) MBR6045WT
T
, T
J
Stg
DC operation
See fig. 4
R
thJC
- 55 to 150 °C
1.0
DC operation 0.5
R
thCS
Mounting surface, smooth and greased 0.24
6g
0.21 oz.
kgf · cm
(lbf · in)
V60 A 0.75
mA
°C/W
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94298
2 Revision: 14-Aug-08
MBR6045WTPbF
Schottky Rectifier, 2 x 30 A
1000
100
TJ = 150 °C
= 125 °C
T
J
= 25 °C
T
10
- Instantaneous
F
I
Forward Current (A)
1
0.2 0.4 0.6 0.8 1.0
0
V
- Forward Voltage Drop (V)
FM
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
J
10 000
Vishay High Power Products
1000
100
10
1
0.1
- Reverse Current (mA)
R
0.01
I
0.001
1.61.2 1.4
0
Fig. 2 - Typical Values of Reverse Current vs.
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
1051520
V
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
- Reverse Voltage (V)
R
Reverse Voltage (Per Leg)
25 30 35
40
45
1000
- Junction Capacitance (pF)
T
C
100
0
TJ = 25 °C
2010 30 40
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage (Per Leg)
10
1
D = 0.75
0.1
Single pulse
(thermal resistance)
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1
D = 0.50
D = 0.33
D = 0.25
D = 0.20
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
50
P
DM
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
Characteristics (Per Leg)
1/t2
t
1
thJC
t
2
+ T
C
100 10
Document Number: 94298 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 14-Aug-08 3
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