Vishay MBR40L15CWPBF Data Sheet

MBR40L15CWPbF

Vishay High Power Products

Schottky Rectifier, 2 x 20 A

 

Base

 

common

 

cathode

 

2

1

3

TO-247AC

Anode

2

Anode

 

1

2

 

Common

 

 

 

 

 

cathode

 

PRODUCT SUMMARY

IF(AV)

2 x 20 A

VR

15 V

IRM

600 mA at 100 °C

FEATURES

• 125 °C TJ operation (VR < 5 V)

 

• Center tap module

Pb-free

Optimized for OR-ing applications

Available

RoHS*

Ultra low forward voltage drop

High frequency operation

COMPLIANT

 

• Guard ring

for enhanced ruggedness and

long term

 

reliability

 

 

• High purity,

high temperature epoxy encapsulation for

 

enhanced mechanical strength and moisture resistance

Lead (Pb)-free (“PbF” suffix)

 

Designed and qualified for industrial level

 

DESCRIPTION

The MBR40L15CWPbF center tap Schottky rectifier module has been optimized for ultra low forward voltage drop specifically for the OR-ing of parallel power supplies. The proprietary barrier technology allows for reliable operation up to 125 °C junction temperature. Typical applications are in parallel switching power supplies, converters, reverse battery protection, and redundant power subsystems.

MAJOR RATINGS AND CHARACTERISTICS

 

 

 

 

SYMBOL

 

CHARACTERISTICS

 

VALUES

UNITS

 

 

 

 

 

 

 

 

 

 

 

 

IF(AV)

Rectangular waveform

 

 

40

 

A

VRRM

 

 

 

 

 

 

15

 

V

IFSM

tp = 5 µs sine

 

 

700

 

A

VF

20 Apk, TJ = 125 °C (per leg, typical)

 

0.26

 

V

TJ

Range

 

 

 

 

 

- 55 to 125

 

°C

 

 

 

 

 

 

 

 

 

 

 

 

VOLTAGE RATINGS

 

 

 

 

 

 

 

 

 

 

PARAMETER

 

SYMBOL

 

TEST CONDITIONS

 

MBR40L15CWPbF

UNITS

 

 

 

 

 

 

 

 

 

 

 

 

Maximum DC reverse voltage

 

VR

 

TJ = 100 °C

 

15

 

V

Maximum working peak reverse voltage

VRWM

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ABSOLUTE MAXIMUM RATINGS

 

 

 

 

 

 

PARAMETER

 

SYMBOL

 

 

TEST CONDITIONS

VALUES

 

UNITS

 

 

 

 

 

 

 

 

 

 

 

 

Maximum average

per leg

 

 

 

 

 

 

20

 

 

forward current

 

 

IF(AV)

 

50 % duty cycle, at TC = 86 °C, rectangular waveform

 

 

 

 

per device

 

 

40

 

 

See fig. 5

 

 

 

 

 

 

 

A

 

 

 

 

 

 

 

 

 

 

 

Maximum peak one cycle

 

 

 

 

5 µs sine or 3 µs rect. pulse

Following any rated

700

 

 

 

 

 

 

 

non-repetitive surge current per leg

IFSM

 

 

 

load condition and with

 

 

 

 

 

10 ms sine or 6 ms rect. pulse

330

 

 

See fig. 7

 

 

 

 

rated VRRM applied

 

 

Non-repetitive avalanche energy per leg

EAS

 

 

TJ = 25 °C, IAS = 2 A, L = 6 mH

 

5

 

mJ

Repetitive avalanche current per leg

IAR

 

 

Current decaying linearly to zero in 1 µs

2

 

A

 

Frequency limited by TJ maximum VA = 1.5 x VR typical

 

 

 

 

 

 

 

 

 

 

* Pb containing terminations are not RoHS compliant, exemptions may apply

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Document Number: 94297

For technical questions, contact: diodes-tech@vishay.com

www.vishay.com

Revision: 14-Aug-08

 

 

 

 

 

 

 

 

1

MBR40L15CWPbF

Vishay High Power Products Schottky Rectifier, 2 x 20 A

ELECTRICAL SPECIFICATIONS

 

 

 

 

 

 

 

 

PARAMETER

SYMBOL

TEST CONDITIONS

TYP.

 

MAX.

 

UNITS

 

 

 

 

 

 

 

 

 

 

 

 

 

20 A

TJ = 25 °C

-

 

0.42

 

 

 

 

 

 

 

 

 

 

 

 

Maximum forward voltage drop per leg

VFM (1)

40 A

-

 

0.52

 

V

 

 

 

See fig. 1

20 A

TJ = 125 °C

0.26

 

0.34

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

40 A

0.37

 

0.50

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Reverse leakage current per leg

IRM (1)

TJ = 25 °C

VR = Rated VR

-

 

10

 

mA

See fig. 2

TJ = 100 °C

-

 

600

 

 

 

 

 

 

Threshold voltage

VF(TO)

TJ = TJ maximum

0.182

 

 

V

Forward slope resistance

rt

7.6

 

 

 

 

 

 

 

 

Maximum junction capacitance per leg

CT

VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C

-

 

2000

 

pF

Typical series inductance per leg

LS

Measured lead to lead 5 mm from package body

8

 

-

 

nH

Maximum voltage rate of change

dV/dt

Rated VR

10 000

 

 

V/µs

Note

 

 

 

 

 

 

 

 

 

(1) Pulse width < 300 µs, duty cycle < 2 %

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

THERMAL - MECHANICAL SPECIFICATIONS

 

 

 

 

 

 

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

 

UNITS

 

 

 

 

 

 

 

 

 

Maximum junction temperature range

TJ

 

 

- 55 to 125

 

 

°C

Maximum storage temperature range

TStg

 

 

- 55 to 150

 

 

 

 

 

 

 

Maximum thermal resistance,

 

DC operation

1.4

 

 

 

 

 

junction to case per leg

 

See fig. 4

 

 

 

 

 

RthJC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum thermal resistance,

DC operation

0.7

 

 

 

°C/W

 

 

 

 

junction to case per package

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Typical thermal resistance,

RthCS

Mounting surface, smooth and greased

0.24

 

 

 

 

 

case to heatsink

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Approximate weight

 

 

 

6

 

 

 

 

g

 

 

 

 

 

 

 

 

 

 

 

 

0.21

 

 

 

 

oz.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Mounting torque

minimum

 

Non-lubricated threads

6 (5)

 

 

 

kgf · cm

 

 

 

 

 

 

(lbf · in)

maximum

 

12 (10)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Marking device

 

Case style TO-247AC (JEDEC)

MBR40L15CW

 

 

 

 

 

 

 

 

 

 

 

www.vishay.com

For technical questions, contact: diodes-tech@vishay.com

Document Number: 94297

2

 

Revision: 14-Aug-08

Vishay MBR40L15CWPBF Data Sheet

MBR40L15CWPbF

Schottky Rectifier, 2 x 20 A Vishay High Power Products

<![if ! IE]>

<![endif]>Instantaneous

 

1000

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>Current(mA)

<![if ! IE]>

<![endif]>Current(A)

100

 

 

 

 

TJ = 125 °C

 

 

 

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>I

<![if ! IE]>

<![endif]>Forward

10

 

 

 

 

TJ = 25 °C

 

<![if ! IE]>

<![endif]>Reverse

<![if ! IE]>

<![endif]>-

 

 

 

 

 

TJ = 75 °C

 

 

<![if ! IE]>

<![endif]>F

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>-

 

 

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>R

 

 

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>I

 

 

1

 

 

 

 

 

 

 

 

 

 

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

VFM - Forward Voltage Drop (V)

Fig. 1 - Maximum Forward Voltage Drop Characteristics

10 000

<![if ! IE]>

<![endif]>(pF)

 

 

 

 

<![if ! IE]>

<![endif]>CapacitanceJunction-

 

 

TJ = 25 °C

 

 

1000

 

 

 

<![if ! IE]>

<![endif]>T

 

 

 

 

<![if ! IE]>

<![endif]>C

 

 

 

 

 

100

 

 

 

 

0

5

10

15

1000

 

 

 

 

 

 

 

TJ = 100 °C

 

 

 

100

 

 

 

 

 

 

 

TJ = 75 °C

 

 

10

 

TJ = 50 °C

 

 

1

 

TJ = 25 °C

 

 

 

 

 

 

 

 

0.1

 

 

 

 

 

0

3

6

9

12

15

VR - Reverse Voltage (V)

Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage

20

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

<![if ! IE]>

<![endif]>(°C/W)

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>Impedance

1

 

 

 

 

 

 

 

 

 

 

 

 

 

PDM

 

 

 

 

 

 

 

t1

 

<![if ! IE]>

<![endif]>- Thermal

 

 

 

 

 

 

 

0.1

 

 

D = 0.75

 

 

t2

 

 

 

D = 0.50

 

 

 

 

 

 

Single pulse

 

Notes:

 

 

 

 

D = 0.33

 

 

 

 

(thermal resistance)

D = 0.25

 

1. Duty factor D = t1/t2

 

<![if ! IE]>

<![endif]>thJC

 

 

 

D = 0.20

 

 

 

 

 

 

2. Peak TJ = PDM x ZthJC + TC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>Z

0.01

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.00001

0.0001

0.001

0.01

0.1

1

10

100

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics

Document Number: 94297

For technical questions, contact: diodes-tech@vishay.com

www.vishay.com

Revision: 14-Aug-08

 

3

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