Vishay High Power Products
Schottky Rectifier, 2 x 20 A
MBR4060WTPbF
Base
common
cathode
2
FEATURES
• 150 °C TJ operation
• Center tap TO-247 package
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength and
moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level
TO-2 47AC
13
Anode
1
Common
cathode
Anode
2
2
DESCRIPTION
PRODUCT SUMMARY
I
F(AV)
V
R
I
RM
2 x 20 A
60 V
100 mA at 125 °C
The MBR4060WTPbF center tap Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Rectangular waveform 40 A
60 V
tp = 5 µs sine 1020 A
20 Apk, TJ = 125 °C (per leg) 0.62 V
Range - 55 to 150 °C
Availabl
RoH
Pb-free
COMPLIAN
Available
RoHS*
COMPLIANT
VOLTAGE RATINGS
PARAMETER SYMBOL MBR4060WTPbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
60 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
per leg
per device 40
Maximum peak one cycle
non-repetitive surge current per leg
Non-repetitive avalanche energy per leg E
Repetitive avalanche current per leg I
I
F(AV)
I
FSM
AR
TC = 108 °C, 50 % duty cycle, rectangular waveform
5 µs sine or 3 µs rect. pulse
Following any rated
load condition and with
10 ms sine or 6 ms rect. pulse 265
TJ = 25 °C, IAS = 1.5 A, L = 11.5 mH 13 mJ
AS
rated V
RRM
applied
Current decaying linearly to zero in 1 µs
Frequency limited by T
maximum VA = 1.5 x VR typical
J
20
1020
1.5 A
A
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94296 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 14-Aug-08 1
MBR4060WTPbF
Vishay High Power Products
Schottky Rectifier, 2 x 20 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
= 25 °C 0.72
T
(1)
Maximum forward voltage drop V
Maximum instantaneous reverse current I
Maximum junction capacitance C
Typical series inductance L
FM
RM
20 A
TJ = 25 °C
T
= 125 °C 100
J
VR = 5 V
T
Measured from top of terminal to mounting plane 7.5 nH
S
Maximum voltage rate of change dV/dt Rated V
(test signal range 100 kHz to 1 MHz) 25 °C 720 pF
DC,
R
J
T
= 125 °C 0.62
J
Rated DC voltage
1.0
10 000 V/µs
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink
Maximum thermal resistance,
junction to ambient
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style TO-247AC MBR4060WT
T
, T
J
Stg
R
DC operation 2.20
thJC
R
thCS
R
thJA
Mounting surface, smooth and greased 1.10
DC operation 50
- 55 to 150 °C
6g
0.21 oz.
kgf · cm
(lbf · in)
V
mA
°C/W
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94296
2 Revision: 14-Aug-08
MBR4060WTPbF
1000
100
10
- Instantaneous
F
I
Forward Current (A)
1
0
V
Schottky Rectifier, 2 x 20 A
TJ = 150 °C
= 125 °C
T
J
= 25 °C
T
J
0.5 1.0 1.5 2.0
- Forward Voltage Drop (V)
FM
2.5
- Reverse Current (mA)
R
I
Vishay High Power Products
1000
1
0
TJ = 150 °C
TJ = 100 °C
TJ = 50 °C
10 20
V
R
TJ = 125 °C
TJ = 75 °C
TJ = 25 °C
30 40
- Reverse Voltage (V)
100
10
0.1
0.01
0.001
50
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
60
TJ = 25 °C
- Junction Capacitance (pF)
T
C
100
0
2010 30
V
- Reverse Voltage (V)
R
40
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.1
D = 0.50
D = 0.33
0.01
- Thermal Impedance (°C/W)
thJC
Z
0.001
0.00001 0.0001 0.001 0.01 0.1 1
Single pulse
(thermal resistance)
D = 0.25
D = 0.17
D = 0.08
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
Characteristics
thJC
6050
P
DM
t
1
t
2
1/t2
+ T
thJC
C
100 10
Document Number: 94296 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 14-Aug-08 3