Vishay High Power Products
Schottky Rectifier, 2 x 20 A
MBR4045WTPbF
Base
common
cathode
2
FEATURES
• 150 °C TJ operation
• Center tap TO-247 package
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength and
moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level
TO-2 47AC
13
Anode
1
Common
cathode
Anode
2
2
DESCRIPTION
PRODUCT SUMMARY
I
F(AV)
V
R
I
RM
2 x 20 A
45 V
85 mA at 125 °C
The MBR4045WTPbF center tap Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
I
FRM
V
RRM
I
FSM
V
F
T
J
Rectangular waveform (per device) 40
TC = 125 °C (per leg) 40
45 V
tp = 5 µs sine 1020 A
20 Apk, TJ = 125 °C 0.56 V
Range - 55 to 150 °C
A
Pb-free
Available
RoHS*
COMPLIANT
VOLTAGE RATINGS
PARAMETER SYMBOL MBR4045WTPbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
45 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
Peak repetitive forward current per leg I
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg E
Repetitive avalanche current per leg I
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94295 For technical questions, contact: diodes-tech@vishay.com
Revision: 14-Aug-08 1
per leg
per device 40
I
F(AV)
FRM
I
FSM
AR
AS
TC = 125 °C, 50 % duty cycle, rectangular waveform
Rated VR, square wave, 20 kHz, TC = 125 °C 40
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 265
TJ = 25 °C, IAS = 3 A, L = 4.40 mH 20 mJ
Current decaying linearly to zero in 1 µs
Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated load
condition and with rated
V
applied
RRM
20
A
1020
3A
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MBR4045WTPbF
Vishay High Power Products
Schottky Rectifier, 2 x 20 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
20 A
Maximum forward voltage drop V
FM
(1)
20 A
40 A 0.78
40 A 0.72
TJ = 25 °C
Maximum instantaneous reverse current I
Threshold voltage V
Forward slope resistance r
Maximum junction capacitance C
Typical series inductance L
RM
F(TO)
(1)
J
T
J
TJ = TJ maximum
t
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 900 pF
T
Measured from top of terminal to mounting plane 7.5 nH
S
Maximum voltage rate of change dV/dt Rated V
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
T
= 25 °C
J
= 125 °C
T
J
= 100 °C 50
Rated DC voltage
= 125 °C 85
R
0.59
0.56
1.75
0.29 V
10.3 mΩ
10 000 V/µs
V
mAT
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink
J
Stg
R
DC operation 1.4
thJC
R
thCS
Mounting surface, smooth and greased 0.7
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Device marking Case style TO-247AC (JEDEC) MBR4045WT
- 55 to 150
- 55 to 175
°C
°C/W
6g
0.21 oz.
kgf · cm
(lbf · in)
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94295
2 Revision: 14-Aug-08
MBR4045WTPbF
1000
100
10
- Instantaneous
F
I
Forward Current (A)
1
0
V
Schottky Rectifier, 2 x 20 A
TJ = 150 °C
= 125 °C
T
J
T
= 25 °C
J
0.4 0.8 1.2 1.6
- Forward Voltage Drop (V)
FM
2.0
- Reverse Current (mA)
R
I
Vishay High Power Products
1000
10
0.1
1
0
TJ = 150 °C
TJ = 100 °C
TJ = 50 °C
10 20
V
R
TJ = 125 °C
TJ = 75 °C
TJ = 25 °C
30
- Reverse Voltage (V)
40
100
0.01
0.001
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
50
TJ = 25 °C
- Junction Capacitance (pF)
T
C
100
0
10 20 30
V
- Reverse Voltage (V)
R
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
D = 0.75
0.1
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1
Single pulse
(thermal resistance)
D = 0.50
D = 0.33
D = 0.25
D = 0.20
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
40
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
Characteristics
thJC
50
P
DM
t
1
t
2
1/t2
+ T
thJC
C
100 10
Document Number: 94295 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 14-Aug-08 3