Vishay MBR350, MBR360 Data Sheet

VS-MBR350 (-M3), VS-MBR360 (-M3)

www.vishay.com	Vishay Semiconductors
	Schottky Rectifier, 3 A

Cathode Anode

C-16

PRODUCT SUMMARY

Package	DO-201AD (C-16)
IF(AV)	3 A
VR	50 V, 60 V
VF at IF	0.64 V
IRM max.	15 mA at 125 °C
TJ max.	150 °C
Diode variation	Single die
EAS	5.0 mJ

FEATURES

•Low profile, axial leaded outline

•Very low forward voltage drop

• High frequency operation

•High purity, high temperature epoxy encapsulation for enhanced mechanical strength

and moisture resistance

• Guard ring for enhanced ruggedness and long term reliability

•Designed and qualified for commercial level

•Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

DESCRIPTION

The VS-MBR350..., VS-MBR360... axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL	CHARACTERISTICS	VALUES	UNITS
IF(AV)	Rectangular waveform	3.0	A
VRRM		50/60	V
IFSM	tp = 5 μs sine	460	A
VF	3 Apk, TJ = 25 °C	0.73	V
TJ		- 40 to 150	°C

VOLTAGE RATINGS

PARAMETER	SYMBOL	VS-MBR350	VS-MBR350-M3	VS-MBR360	VS-MBR360-M3	UNITS
Maximum DC reverse voltage	VR
Maximum working peak	VRWM	50	50	60	60	V
reverse voltage

ABSOLUTE MAXIMUM RATINGS

	PARAMETER	SYMBOL	TEST CONDITIONS		VALUES	UNITS
	Maximum average forward current	IF(AV)	50 % duty cycle at TL = 50 °C, rectangular waveform		3.0
	See fig. 4
						A
	Maximum peak one cycle		5 µs sine or 3 µs rect. pulse	Following any rated load	460
	non-repetitive surge current	IFSM		condition and with rated
	See fig. 6		10 ms sine or 6 ms rect. pulse	VRRM applied	80
	Non-repetitive avalanche energy	EAS	TJ = 25 °C, IAS = 1 A, L = 10 mH		5.0	mJ
	Repetitive avalanche current	IAR	Current decaying linearly to zero in 1 μs		1.0	A
			Frequency limited by, TJ maximum VA = 1.5 x VR typical
	Revision: 13-Oct-11		1	Document Number: 93450

For technical questions within your region: [e-mail], [e-mail], [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-MBR350 (-M3), VS-MBR360 (-M3)

		www.vishay.com					Vishay Semiconductors
	ELECTRICAL SPECIFICATIONS
	PARAMETER			SYMBOL		TEST CONDITIONS		VALUES		UNITS
					1.0 A			0.58
							TJ = 25 °C
					3.0 A			0.73
	Maximum forward voltage drop			VFM (1)	9.4 A			1.06		V
	See fig. 1				1.0 A			0.49
							TJ = 125 °C
					3.0 A			0.64
					9.4 A			0.89
	Maximum reverse leakage current				TJ = 25 °C			0.6
				IRM (1)	TJ = 100 °C		VR = Rated VR	8		mA
	See fig. 2
					TJ = 125 °C			15
	Typical junction capacitance			CT	VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C			190		pF
	Typical series inductance			LS	Measured lead to lead 5 mm from package body			9.0		nH
	Maximum voltage rate of change			dV/dt	Rated VR			10 000		V/µs
Note
(1)	Pulse width < 300 μs, duty cycle < 2 %
	THERMAL - MECHANICAL SPECIFICATIONS
	PARAMETER			SYMBOL		TEST CONDITIONS		VALUES		UNITS
	Maximum junction and storage			TJ (1), TStg				- 40 to 150		°C
	temperature range
	Maximum thermal resistance,			RthJL (2)	DC operation			30		°C/W
	junction to lead				See fig. 4
	Approximate weight							1.2		g
								0.042		oz.
	Marking device				Case style C-16			MBR350
								MBR360
Notes
(1)	dPtot	1
	------------- < -------------- thermal runaway condition for a diode on its own heatsink
	dTJ	RthJA
(2)	Mounted 1" square PCB, thermal probe connected to lead 2 mm from package

Revision: 13-Oct-11

2

Document Number: 93450

For technical questions within your region: [e-mail], [e-mail], [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000