Vishay MBR340TR Data Sheet
Bulletin PD-20594 rev. B 03/03
MBR350
MBR360
SCHOTTKY RECTIFIER 3.0 Amp
Major Ratings and Characteristics
Characteristics Units
I
Rectangular 3.0 A
F(AV)
waveform
V
RRM
I
@ tp = 5 µs sine 460 A
FSM
VF@ 3 Apk, TJ = 25°C 0.73 V
T
J
CASE STYLE AND DIMENSIONS
MBR350
MBR360
50/60 V
- 40 to 150 °C
Description/ Features
The MBR350, MBR360 axial leaded Schottky rectifier has
been optimized for very low forward voltage drop, with
moderate leakage. Typical applications are in switching
power supplies, converters, free-wheeling diodes, and
reverse battery protection.
Low profile, axial leaded outline
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Very low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
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Outline C - 16
Dimensions in millimeters and inches
1
MBR350, MBR360
Bulletin PD-20594 rev. B 03/03
Voltage Ratings
Part number MBR350 MBR360
VRMax. DC Reverse Voltage (V)
V
Max. Working Peak Reverse Voltage (V)
RWM
50 60
Absolute Maximum Ratings
Parameters Value Units Conditions
I
Max. Average Forward Current 3.0 A 50% duty cycle @ TL = 50°C, rectangular wave form
F(AV)
* See Fig. 4
I
Max. Peak One Cycle Non-Repetitive 460 5µs Sine or 3µs Rect. pulse
FSM
Surge Current * See Fig. 6 80 10ms Sine or 6ms Rect. pulse
EASNon-Repetitive Avalanche Energy 5.0 mJ T
A
= 25 °C, I
J
= 1 Amps, L = 10 mH
AS
IARRepetitive Avalanche Current 1.0 A Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. VA = 1.5 x VR typical
Following any rated
load condition and with
rated V
RRM
applied
Electrical Specifications
Parameters Value Units Conditions
VFMMax. Forward Voltage Drop 0.58 V @ 1.0A
* See Fig. 1 (1) 0.73 V @ 3.0A TJ = 25 °C
1.06 V @ 9.4A
0.49 V @ 1.0A
0.64 V @ 3.0A TJ = 125 °C
0.89 V @ 9.4A
IRMMax. Reverse Leakage Current 0.6 mA TJ = 25 °C
* See Fig. 2 (1) 8 mA TJ = 100 °C VR = rated V
15 mA TJ = 125 °C
CTTypical Junction Capacitance 190 pF VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C
LSTypical Series Inductance 9.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/µs (Rated VR)
(1) Pulse Width < 300µs, Duty Cycle <2%
R
Thermal-Mechanical Specifications
Parameters Value Units Conditions
TJMax. Junction Temperature Range(*) -40 to 150 °C
T
Max. Storage Temperature Range -40 to 150 °C
stg
R
Typical Thermal Resistance Junction 30 °C/W DC operation (* See Fig. 4)
thJL
to Lead (**)
wt Approximate Weight 1.2 (0.042) g (oz.)
Case Style C - 16
(*) dPtot 1
< thermal runaway condition for a diode on its own heatsink
dTj Rth( j-a)
(**) Mounted 1 inch square PCB, thermal probe connected to lead 2mm from package
2
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